公开(公告)号：US11949065B2

公开(公告)日：2024-04-02

申请号：US17238488

申请日：2021-04-23

Applicant: Samsung Electronics Co., Ltd. ,  CORNING INCORPORATED

Inventor： Jusik Kim ,  Sewon Kim ,  Hyunseok Kim ,  Michael Edward Badding ,  Zhen Song ,  Karen E. Thomas-Alyea ,  Lincoln James Miara ,  Dongmin Im

IPC: H01M10/056 ,  H01M10/0525 ,  H01M10/0562 ,  H01M50/403 ,  H01M50/431 ,  H01M50/449 ,  H01M50/491

CPC classification number: H01M10/0562 ,  H01M10/0525 ,  H01M50/403 ,  H01M50/431 ,  H01M50/449 ,  H01M50/491 ,  H01M2300/0068 ,  H01M2300/0094

Abstract: A solid electrolyte including an inorganic lithium ion conductive film and a porous layer on a surface of the inorganic lithium ion conductive film, wherein the porous layer includes a first porous layer and a second porous layer, and the second porous layer is disposed between the inorganic lithium ion conductive film and the first porous layer, and wherein the first porous layer has a size greater which is than a pore size of the second porous layer.

公开(公告)号：US20230246177A1

公开(公告)日：2023-08-03

申请号：US18297507

申请日：2023-04-07

Applicant: Samsung Electronics Co., Ltd. ,  CORNING INCORPORATED

Inventor： Myungjin Lee ,  Jusik Kim ,  Ryounghee Kim ,  Sewon Kim ,  Michael Edward BADDING ,  Wonseok Chang ,  Jaemyung Chang ,  Zhen SONG ,  Sung Heo

IPC: H01M4/36 ,  H01M10/0562 ,  H01M10/058 ,  H01M4/485 ,  H01M4/587 ,  H01M4/131 ,  H01M4/133

CPC classification number: H01M4/366 ,  H01M10/0562 ,  H01M10/058 ,  H01M4/485 ,  H01M4/587 ,  H01M4/131 ,  H01M4/133 ,  H01M2004/027

Abstract: An all-solid secondary battery including: a positive electrode layer including a positive active material; a negative electrode layer including a negative electrode current collector and a first negative active material layer; and a solid electrolyte layer between the positive electrode layer and the negative electrode layer, the solid electrolyte including a solid electrolyte, wherein the first negative active material layer is adjacent to the solid electrolyte layer, the first negative active material layer includes a multi-component metal composite including M1, M2, M3, and X, an atomic ratio of M2M3X to M1M2M3X in the multi-component metal composite is in a range of about 0.5 to about 0.85, and an atomic ratio of M2M3X to M1 ion is in a range of about 1 to about 5.51.

公开(公告)号：US20180145316A1

公开(公告)日：2018-05-24

申请号：US15816095

申请日：2017-11-17

Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd.

Inventor： Jongseok Moon ,  Mijong Kim ,  Sewon Kim ,  Kyueun Shim ,  Sungsoo Han ,  Inhyuk Son ,  Jumyeung Lee

IPC: H01M4/38 ,  H01M10/052 ,  H01M4/36 ,  H01M4/62 ,  H01M4/04

CPC classification number: H01M4/386 ,  H01G11/24 ,  H01G11/38 ,  H01G11/42 ,  H01G11/50 ,  H01M4/04 ,  H01M4/0471 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/362 ,  H01M4/364 ,  H01M4/366 ,  H01M4/625 ,  H01M10/052 ,  H01M2004/021 ,  H01M2004/027 ,  Y02E60/13

Abstract: A porous silicon composite including: a porous silicon composite cluster comprising a porous silicon composite secondary particle and a second carbon flake on at least one surface of the porous silicon composite secondary particle; and a carbonaceous layer on the porous silicon composite cluster, the carbonaceous layer comprising amorphous carbon, wherein the porous silicon composite secondary particle comprises an aggregate of two or more silicon primary particles, the two or more silicon primary particles comprise silicon, a silicon suboxide of the formula SiOx, wherein 0

公开(公告)号：US11837695B2

公开(公告)日：2023-12-05

申请号：US16925547

申请日：2020-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeokjo Gwon ,  Sungkyun Jung ,  Ryounghee Kim ,  Sewon Kim ,  Jusik Kim

IPC: H01M10/0525 ,  H01M10/0562

CPC classification number: H01M10/0562 ,  H01M10/0525 ,  H01M2300/0077

Abstract: An oxide including a compound represented by Formula 1:

(LixM1y)(M2)3-δ(M3)2-ωO12-zXz  Formula 1

wherein, in Formula 1,



6≤x≤8, 0≤y

公开(公告)号：US11611103B2

公开(公告)日：2023-03-21

申请号：US16914937

申请日：2020-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ryounghee Kim ,  Yan Wang ,  Lincoln Miara ,  Hyeokjo Gwon ,  Sewon Kim ,  Jusik Kim ,  Sungkyun Jung

IPC: H01M10/0562 ,  H01M4/40 ,  H01M4/38 ,  H01B1/08 ,  H01M4/36 ,  C01G27/00 ,  H01M12/06 ,  H01M12/08 ,  H01M4/62 ,  C01G35/00 ,  H01M10/052

Abstract: A solid ion conductor compound includes a compound represented by Formula 1: Li6−wHf2−xMxO7−yZy  Formula 1 where, in Formula 1, M is an element having an oxidation number of a and a is 5, 6, or a combination thereof, Z is an element having an oxidation number of −1, and 0

公开(公告)号：US20220006125A1

公开(公告)日：2022-01-06

申请号：US17118527

申请日：2020-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myungjin Lee ,  Jusik Kim ,  Sewon Kim ,  Victor ROEV ,  Changhoon Jung ,  Intaek Han

IPC: H01M10/0585 ,  H01M4/62 ,  H01M4/36 ,  H01M4/587 ,  H01M4/38 ,  H01M4/40 ,  H01M10/0562 ,  H01M4/133 ,  H01M4/134 ,  H01M10/0525 ,  H01M10/0564 ,  C07D295/037

Abstract: An all-solid secondary battery includes a cathode layer including a cathode active material layer; an anode layer; and a solid electrolyte layer disposed between the cathode layer and the anode layer, wherein the anode layer includes an anode current collector and a first anode active material layer is disposed on the anode current collector, wherein the first anode active material layer includes an organic electrolyte and an anode active material that is capable of forming an alloy with lithium or a compound with lithium, and wherein the organic electrolyte includes an organic salt including an organic cation and an anion.

公开(公告)号：US20210043966A1

公开(公告)日：2021-02-11

申请号：US16925547

申请日：2020-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeokjo Gwon ,  Sungkyun Jung ,  Ryounghee Kim ,  Sewon Kim ,  Jusik Kim

IPC: H01M10/0562 ,  H01M10/0525

Abstract: An oxide including a compound represented by Formula 1: (LixM1y)(M2)3-δ(M3)2-ωO12-zXz   Formula 1 wherein, in Formula 1, 6≤x≤8, 0≤y

公开(公告)号：US20190233294A1

公开(公告)日：2019-08-01

申请号：US16253639

申请日：2019-01-22

Applicant: Samsung Electronics Co., Ltd. ,  Samsung SDI Co., Ltd.

Inventor： Jongseok Moon ,  Mijong Kim ,  Sewon Kim ,  Kyueun Shim ,  Sungsoo Han ,  Inhyuk Son ,  Jumyeung Lee ,  Minwoo Lim

IPC: C01B33/023 ,  H01M4/38 ,  H01M4/583 ,  H01L35/14

CPC classification number: C01B33/023 ,  B82Y40/00 ,  C01B32/182 ,  C01B32/186 ,  C01B32/20 ,  C01B33/00 ,  C01B33/113 ,  C01P2004/03 ,  C01P2004/04 ,  H01L35/14 ,  H01M4/0416 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/386 ,  H01M4/48 ,  H01M4/583 ,  H01M4/587 ,  H01M4/625 ,  H01M10/0525

Abstract: A silicon-containing structure including: a silicon composite including a porous silicon secondary particle and a first carbon flake on a surface of the porous silicon secondary particle; a carbonaceous coating layer on the porous silicon composite, the carbonaceous coating layer comprising a first amorphous carbon; and the silicon composite comprises a second amorphous carbon and has a density that is equal to or less than a density of the carbonaceous coating layer, wherein the porous silicon secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a second carbon flake on a surface of the silicon suboxide.

公开(公告)号：US20240192154A1

公开(公告)日：2024-06-13

申请号：US18243835

申请日：2023-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangeun Kim ,  Sewon Kim ,  Huisoo Kim ,  Jeongho Ahn ,  Sungeun Lee

IPC: G01N23/2251

CPC classification number: G01N23/2251 ,  G01N2223/42 ,  G01N2223/6116

Abstract: A pattern inspection apparatus includes a sample including a plurality of holes having thicknesses that are different from each other, an electron gun configured to generate an input electron beam and emit the input electron beam onto a wafer and the sample, a stage configured to support the wafer and the sample, a detector configured to generate a scanning electron microscope (SEM) image by detecting emitted electrons from the wafer and the sample, and a processor configured to process the SEM image into a three-dimensional profiling image containing depth information of the wafer and determine whether a condition of the input electron beam has changed based on the processing of the SEM image.

公开(公告)号：US11984592B2

公开(公告)日：2024-05-14

申请号：US16989956

申请日：2020-08-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeokjo Gwon ,  Jusik Kim ,  Wooyoung Yang ,  Ryounghee Kim ,  Sewon Kim ,  Sungkyun Jung

IPC: H01M4/525 ,  H01M4/02 ,  H01M4/131 ,  H01M4/133 ,  H01M4/36 ,  H01M10/0525

CPC classification number: H01M4/525 ,  H01M4/131 ,  H01M4/133 ,  H01M4/366 ,  H01M10/0525 ,  H01M2004/027 ,  H01M2004/028 ,  H01M2300/0028 ,  H01M2300/0071

Abstract: A composite solid electrolyte including: a porous nanostructure; and a solid electrolyte disposed on a surface of the porous nanostructure, wherein the composite solid electrolyte satisfies Equation 1

0