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    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20150243727A1

    公开(公告)日：2015-08-27

    申请号：US14708423

    申请日：2015-05-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ki-Yeon Park ,  Jae-Hyoung Choi ,  Vladimir Urazaev ,  Jin-Ha Jeong

    IPC: H01L49/02 ,  H01L27/108

    CPC classification number: H01L27/1085 ,  H01L21/283 ,  H01L21/311 ,  H01L21/76802 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/92

    Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

    Abstract translation: 提供半导体器件及其制造方法。 所述方法可以包括在半导体衬底上形成模塑层。 形成通过成形层的存储电极。 存储电极的一部分通过部分蚀刻成型层而露出。 通过氧化存储电极的暴露部分形成牺牲氧化物层。 去除部分蚀刻的成型层和牺牲氧化物层。 在其上移除成型层和牺牲氧化物层的基板上形成电容器电介质层。 在电容器电介质层上形成平板电极。

    Semiconductor Devices and Methods of Fabricating the Same
    4.
    发明申请
    Semiconductor Devices and Methods of Fabricating the Same 有权
    半导体器件及其制造方法

    公开(公告)号：US20140256112A1

    公开(公告)日：2014-09-11

    申请号：US14193071

    申请日：2014-02-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ki-Yeon Park ,  Jae-Hyoung Choi ,  Vladimir Urazaev ,  Jin-Ha Jeong

    IPC: H01L49/02

    CPC classification number: H01L27/1085 ,  H01L21/283 ,  H01L21/311 ,  H01L21/76802 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/92

    Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

    Abstract translation: 提供半导体器件及其制造方法。 所述方法可以包括在半导体衬底上形成模塑层。 形成通过成形层的存储电极。 存储电极的一部分通过部分蚀刻成型层而露出。 通过氧化存储电极的暴露部分形成牺牲氧化物层。 去除部分蚀刻的成型层和牺牲氧化物层。 在其上移除成型层和牺牲氧化物层的基板上形成电容器电介质层。 在电容器电介质层上形成平板电极。

    Semiconductor devices and methods of fabricating the same
    7.
    发明授权
    Semiconductor devices and methods of fabricating the same 有权
    半导体器件及其制造方法

    公开(公告)号：US09059331B2

    公开(公告)日：2015-06-16

    申请号：US14193071

    申请日：2014-02-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ki-Yeon Park ,  Jae-Hyoung Choi ,  Vladimir Urazaev ,  Jin-Ha Jeong

    IPC: H01L21/20 ,  H01L49/02 ,  H01L27/108

    CPC classification number: H01L27/1085 ,  H01L21/283 ,  H01L21/311 ,  H01L21/76802 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/92

    Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

    Abstract translation: 提供半导体器件及其制造方法。 所述方法可以包括在半导体衬底上形成模塑层。 形成通过成型层的存储电极。 存储电极的一部分通过部分蚀刻成型层而露出。 通过氧化存储电极的暴露部分形成牺牲氧化物层。 去除部分蚀刻的成型层和牺牲氧化物层。 在其上移除成型层和牺牲氧化物层的基板上形成电容器电介质层。 在电容器电介质层上形成平板电极。

    Semiconductor device including metal-oxide-semiconductor field effect transistors and methods of fabricating the same
    8.
    发明授权
    Semiconductor device including metal-oxide-semiconductor field effect transistors and methods of fabricating the same 有权
    包括金属氧化物半导体场效应晶体管的半导体器件及其制造方法

    公开(公告)号：US08927367B2

    公开(公告)日：2015-01-06

    申请号：US13736457

    申请日：2013-01-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yongsang Jeong ,  Vladimir Urazaev ,  Jin Ha Jeong ,  Changhun Lee

    IPC: H01L21/336 ,  H01L29/66

    CPC classification number: H01L29/66666 ,  H01L21/823814 ,  H01L21/82385 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66553 ,  H01L29/66621 ,  H01L29/7834

    Abstract: A method of fabricating a semiconductor device may include patterning a substrate to form trenches, forming a sacrificial layer to cover inner surfaces of the trenches, the sacrificial layer having a single-layered structure, forming sacrificial patterns by isotropically etching the sacrificial layer such that the sacrificial layer remains on bottom surfaces of the trenches, forming lightly doped regions in sidewalls of the trenches using the sacrificial patterns as an ion mask, removing the sacrificial patterns, and sequentially forming a gate insulating layer and a gate electrode layer in the trenches.

    Abstract translation: 制造半导体器件的方法可以包括图案化衬底以形成沟槽，形成牺牲层以覆盖沟槽的内表面，牺牲层具有单层结构，通过各向同性蚀刻牺牲层形成牺牲图案，使得 牺牲层保留在沟槽的底表面上，使用牺牲图案作为离子掩模在沟槽的侧壁中形成轻掺杂区域，去除牺牲图案，以及在沟槽中顺序地形成栅极绝缘层和栅极电极层。

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