公开(公告)号：SG10201804427QA

公开(公告)日：2019-03-28

申请号：SG10201804427Q

申请日：2018-05-24

Applicant: SAMSUNG ELECTRONICS CO LTD

Inventor： SANGMOON LEE ,  JUNGTAEK KIM ,  YIHWAN KIM ,  WOO BIN SONG ,  DONGSUK SHIN ,  SEUNG RYUL LEE

IPC: H01L29/10 ,  H01L29/78

Abstract: OF THE DISCLOSURE A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; an active pattern spaced apart from the substrate and extending in a first direction; and a gate structure on the active pattern and extending in a second direction crossing the first direction, wherein a lower portion of the active pattern extends in the first direction and includes a first lower surface that is sloped with respect to an upper surface of the substrate. FIG. 2

公开(公告)号：SG10201804930VA

公开(公告)日：2019-04-29

申请号：SG10201804930V

申请日：2018-06-08

Applicant: SAMSUNG ELECTRONICS CO LTD

Inventor： DONG CHAN SUH ,  SANGMOON LEE ,  YIHWAN KIM ,  WOO BIN SONG ,  DONGSUK SHIN ,  SEUNG RYUL LEE

IPC: H01L29/772 ,  H01L21/335

Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material. FIG. 7

公开(公告)号：US20180266017A1

公开(公告)日：2018-09-20

申请号：US15664294

申请日：2017-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： KEUM SEOK PARK ,  SUNJUNG KIM ,  YIHWAN KIM

IPC: C30B33/12 ,  C30B25/12 ,  C30B25/14 ,  C30B31/16 ,  C30B31/14 ,  H01L21/02

CPC classification number: C30B33/12 ,  C30B25/12 ,  C30B25/14 ,  C30B31/14 ,  C30B31/16 ,  H01L21/02057 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/0262 ,  H01L29/66545 ,  H01L29/66636

Abstract: Disclosed is a substrate treating apparatus comprising a wafer chuck on which a substrate is placed, an injector unit on a side of the wafer chuck and injecting process gases that include a first gas and a second gas, and a gas supply unit supplying the process gases to the injector unit. The gas supply unit comprises first and second gas supply sources that respectively accommodate the first and second gases, first and second gas supply lines that respectively connect the first and second gas supply sources to the injector unit, and first and second heating units that are respectively disposed on the first and second gas supply lines. The first heating units disposed on the first gas supply line have a density per unit length greater than the density per unit length of the second heating units disposed on the second gas supply line.