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1.发明申请公开(公告)号：US20230102906A1
公开(公告)日：2023-03-30
申请号：US17715473
申请日：2022-04-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changsoo LEE , Jinhong KIM , Yongsung KIM , Jiwoon PARK , Jooho LEE , Yong-Hee CHO
IPC: H01L49/02 , H01L27/108
Abstract: A capacitor includes a lower electrode layer including a first conductive layer and a second conductive layer on the first conductive layer, the second conductive layer including SnO2 doped with an impurity; a dielectric layer on the second conductive layer, the dielectric layer including a rutile-phase oxide; and an upper electrode layer on the dielectric layer.
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公开(公告)号：US20210159072A1
公开(公告)日：2021-05-27
申请号：US16697774
申请日：2019-11-27
Applicant: Samsung Electronics Co., Ltd. , Cornell University
Inventor： Kiyoung LEE , Woojin LEE , Myoungho JEONG , Yongsung KIM , Eunsun KIM , Hyosik MUN , Jooho LEE , Changseung LEE , Kyuho CHO , Darrell G. SCHLOM , Craig J. FENNIE , Natalie M. DAWLEY , Gerhard H. OLSEN , Zhe WANG
Abstract: A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (An+1BnX3n+1). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.
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公开(公告)号：US20200257142A1
公开(公告)日：2020-08-13
申请号：US16857756
申请日：2020-04-24
Applicant: SAMSUNG ELECTRONICS CO., LTD. , IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
Inventor： Kiyeon YANG , Youngsun CHOI , Seokho SONG , Jaewoong YOON , Choloong HAN , Yongsung KIM , Jeongyub LEE , Changseung LEE
Abstract: Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.
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公开(公告)号：US20180224574A1
公开(公告)日：2018-08-09
申请号：US15805864
申请日：2017-11-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jeongyub LEE , Changseung LEE , Yongsung KIM , Jaekwan KIM , Byonggwon SONG , Sanghoon SONG , Kiyeon YANG
CPC classification number: G02B1/002 , C23C14/0617 , C23C14/34 , C23C14/5806 , C23C16/401 , C23C16/50 , G02B1/02 , G02B3/00
Abstract: A meta-optical device and a method of manufacturing the same are provided. The method includes depositing a group III-V compound semiconductor on a substrate, forming an anti-oxidation layer, performing crystallization by using post annealing, removing the anti-oxidation layer, and manufacturing a meta-optical device by using patterning.
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公开(公告)号：US20160247906A1
公开(公告)日：2016-08-25
申请号：US15026681
申请日：2014-09-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Xianyu WENXU , Yongsung KIM , Changyoul MOON , Yongyoung PARK , Wooyoung YANG , Jeongyub LEE , Jooho LEE
IPC: H01L29/78 , H01L29/45 , H01L29/10 , H01L29/08 , H01L29/24 , H01L29/423 , H01L29/16 , H01L21/3105 , H01L21/306 , H01L29/47 , H01L29/06
CPC classification number: H01L29/78 , H01L21/30625 , H01L21/31051 , H01L29/0653 , H01L29/0847 , H01L29/1033 , H01L29/1606 , H01L29/24 , H01L29/42364 , H01L29/4238 , H01L29/45 , H01L29/47 , H01L29/66045 , H01L29/7781
Abstract: Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between the source and the drain, and a graphene layer that is provided on the source and the semiconductor element and is spaced apart from the drain. Surfaces of the source and the drain are substantially co-planar with a surface of the semiconductor element. The semiconductor element may be spaced apart from the source and may contact the drain. The graphene layer may have a planar structure. A gate insulating layer and a gate may be provided on the graphene layer. The semiconductor device may be a transistor. The semiconductor device may have a barristor structure. The semiconductor device may be a planar type graphene barristor.
Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括源极，漏极，源极和漏极之间的半导体元件以及设置在源极和半导体元件上并与漏极间隔开的石墨烯层。 源极和漏极的表面与半导体元件的表面基本上共面。 半导体元件可以与源极间隔开并且可以接触漏极。 石墨烯层可以具有平面结构。 栅极绝缘层和栅极可以设置在石墨烯层上。 半导体器件可以是晶体管。 该半导体器件可以具有一个截击器结构。 半导体器件可以是平面型石墨烯阻尼器。
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Patent Agency Ranking
公开(公告)号：US20240363679A1
公开(公告)日：2024-10-31
申请号：US18765887
申请日：2024-07-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Boeun PARK , Yongsung KIM , Jeonggyu SONG , Jooho LEE
Abstract: An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.
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7.发明公开公开(公告)号：US20240222515A1
公开(公告)日：2024-07-04
申请号：US18398912
申请日：2023-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeeeun YANG , Yongsung KIM , Sangwook KIM , Kwanghee LEE , Moonil JUNG
IPC: H01L29/786 , H01L29/423 , H10B10/00
CPC classification number: H01L29/7869 , H01L29/42392 , H10B10/12
Abstract: Provided are a semiconductor device including an oxide semiconductor layer and an electronic device including the semiconductor device. The semiconductor device includes a substrate, a first electrode provided on the substrate, a second electrode provided on the first electrode, an oxide semiconductor layer provided between the first electrode and the second electrode, a gate electrode provided in a thickness direction of the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, wherein a measurement density relative to a theoretical density of the oxide semiconductor layer is about 90% or more. The oxide semiconductor layer of the semiconductor device may have a more uniform and improved film density, and may improve the reliability of the device due to the improved film density.
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8.发明公开公开(公告)号：US20240210008A1
公开(公告)日：2024-06-27
申请号：US18597336
申请日：2024-03-06
Inventor： Yeoreum YOON , Byoungho LEE , Hanjin CHO , Yongsung KIM , Taeeun KIM , Siwoo LEE , Jiyong JANG
IPC: F21V5/00 , F21V19/00 , G01B11/24 , F21Y115/10
CPC classification number: F21V5/00 , F21V19/003 , G01B11/24 , F21Y2115/10
Abstract: A method of designing an optical system including a dome light and coaxial light, includes: determining a distance between the dome light and the coaxial light based on a radius reduction according to a hole of the dome light; determining a size of the coaxial light based on an optical path of a light ray emitted from the coaxial light; and determining a structure of a printed circuit board (PCB) in the dome light based on an optical path through which the light ray emitted from the coaxial light is reflected by an object.
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公开(公告)号：US20230178584A1
公开(公告)日：2023-06-08
申请号：US17841035
申请日：2022-06-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungjun KIM , Yong-Hee CHO , Yongsung KIM , Boeun PARK , Jeongil BANG , Jooho LEE
IPC: H01L49/02 , H01L27/108 , H01L31/0216 , C23C16/455 , C23C14/08 , C23C16/06 , C23C14/34 , C23C28/00
CPC classification number: H01L28/56 , H01L27/10808 , H01L31/02167 , C23C16/45527 , C23C14/088 , C23C16/06 , C23C14/3414 , C23C28/32 , C23C28/3455
Abstract: Disclosed are a high-dielectric and method of manufacturing the same, a target material used for manufacturing the high-dielectric, an electronic device including the high-dielectric, and an electronic apparatus including the electronic device. The high-dielectric includes a first material including oxygen and at least two components, and a second material different from the first materials. The first material is a dielectric having a dielectric constant greater than a dielectric constant of silicon oxide, and the second material is an element for reducing a crystallization temperature of the first material. The content of the second material with respect to the first material may be within a range that does not deteriorate leakage current characteristics of the first material. The content of the second material may be in a range of about 0.1 atomic % to about 10 atomic %, about 0.1 atomic % to about 8.5 atomic %, or about 0.1 atomic % to about 2 atomic %.
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公开(公告)号：US20230080072A1
公开(公告)日：2023-03-16
申请号：US17715389
申请日：2022-04-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinhong KIM , Changsoo LEE , Yongsung KIM , Euncheol DO , Jooho LEE , Yong-Hee CHO
IPC: H01L49/02 , H01L27/108
Abstract: A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.
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