公开(公告)号：EP2779165A3

公开(公告)日：2015-03-25

申请号：EP14159148.7

申请日：2014-03-12

Applicant: Seagate Technology LLC

Inventor： Tian, Wei ,  Inturi, Venkateswara Rao ,  Lin, Doug ,  Yin, Huaqing ,  Qiu, Jiaoming

IPC: G11B5/31 ,  G11B5/23 ,  G11B5/235

CPC classification number: G11B5/3176 ,  B81C1/00611 ,  B81C2201/0109 ,  C09K13/00 ,  C23F4/00 ,  G03F7/0041 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/232 ,  G11B5/235 ,  G11B5/3109 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163

Abstract: In accordance with one embodiment, a method may be implemented by depositing a non-magnetic gap layer of material above a main pole layer of magnetic material; depositing a sacrificial layer of material above the non-magnetic gap layer of material; etching a portion of the sacrificial layer of material while not entirely removing the sacrificial layer of material; and depositing additional sacrificial material to the etched sacrificial layer.

公开(公告)号：EP2779163A2

公开(公告)日：2014-09-17

申请号：EP14159147.9

申请日：2014-03-12

Applicant: Seagate Technology LLC

Inventor： Tian, Wei ,  Inturi, Venkateswara Rao ,  Lin, Doug ,  Yin, Huaqing ,  Qiu, Jiaoming

IPC: G11B5/23 ,  G11B5/235 ,  G11B5/31

CPC classification number: G11B5/235 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/23 ,  G11B5/232 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/332 ,  G11B5/6082 ,  Y10T428/115 ,  Y10T428/1193

Abstract: In accordance with one embodiment, an apparatus can be configured that includes a main pole layer of magnetic material; a second layer of magnetic material; a first gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; a second gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; and wherein the second gap layer of non-magnetic material is disposed directly adjacent to the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, a method of manufacturing such a device may also be utilized.

Abstract translation: 根据一个实施例，可以构造一种装置，其包括磁性材料的主极层; 第二层磁性材料; 设置在所述主极层和所述第二磁性材料层之间的非磁性材料的第一间隙层; 设置在所述主极层和所述第二磁性材料层之间的非磁性材料的第二间隙层; 并且其中所述非磁性材料的所述第二间隙层直接邻近所述第二磁性材料层设置。 根据一个实施例，这允许间隙用作第二层磁性材料的非磁性种子。 根据一个实施例，这允许间隙用作第二层磁性材料的非磁性种子。 根据一个实施例，还可以使用制造这种装置的方法。

公开(公告)号：EP2779163A3

公开(公告)日：2015-03-25

申请号：EP14159147.9

申请日：2014-03-12

Applicant: Seagate Technology LLC

Inventor： Tian, Wei ,  Inturi, Venkateswara Rao ,  Lin, Doug ,  Yin, Huaqing ,  Qiu, Jiaoming

IPC: G11B5/23 ,  G11B5/235 ,  G11B5/31

CPC classification number: G11B5/235 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/23 ,  G11B5/232 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/332 ,  G11B5/6082 ,  Y10T428/115 ,  Y10T428/1193

Abstract: In accordance with one embodiment, an apparatus can be configured that includes a main pole layer of magnetic material; a second layer of magnetic material; a first gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; a second gap layer of non-magnetic material disposed between the main pole layer and the second layer of magnetic material; and wherein the second gap layer of non-magnetic material is disposed directly adjacent to the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, this allows the gap to serve as a non-magnetic seed for the second layer of magnetic material. In accordance with one embodiment, a method of manufacturing such a device may also be utilized.

公开(公告)号：EP2779165A2

公开(公告)日：2014-09-17

申请号：EP14159148.7

申请日：2014-03-12

Applicant: Seagate Technology LLC

Inventor： Tian, Wei ,  Inturi, Venkateswara Rao ,  Lin, Doug ,  Yin, Huaqing ,  Qiu, Jiaoming

IPC: G11B5/31 ,  G11B5/23 ,  G11B5/235

CPC classification number: G11B5/3176 ,  B81C1/00611 ,  B81C2201/0109 ,  C09K13/00 ,  C23F4/00 ,  G03F7/0041 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/232 ,  G11B5/235 ,  G11B5/3109 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163

Abstract: In accordance with one embodiment, a method may be implemented by depositing a non-magnetic gap layer of material above a main pole layer of magnetic material; depositing a sacrificial layer of material above the non-magnetic gap layer of material; etching a portion of the sacrificial layer of material while not entirely removing the sacrificial layer of material; and depositing additional sacrificial material to the etched sacrificial layer.

Abstract translation: 根据一个实施例，可以通过在磁性材料的主极层之上沉积材料的非磁隙层来实现一种方法; 在材料的非磁隙层之上沉积材料牺牲层; 在不完全去除材料的牺牲层的同时蚀刻材料的牺牲层的一部分; 以及将另外的牺牲材料沉积到蚀刻的牺牲层。