公开(公告)号：US20210245109A1

公开(公告)日：2021-08-12

申请号：US16924839

申请日：2020-07-09

Applicant: Seagate Technology LLC

Inventor： Thomas Young Chang ,  Kim Yang Lee ,  Tan G. Liu ,  Yautzong Hsu ,  Shuaigang Xiao

IPC: B01D67/00 ,  B01D61/14 ,  B01D69/06 ,  B01D71/02 ,  B01D69/02

Abstract: A first wafer has a first stop layer deposited on a substrate, the substrate used to form a base support structure. A second wafer has a second stop layer deposited on a sacrificial substrate, and a filter layer deposited on the second stop layer. A rib layer is deposited on one of: the first stop layer of the first layer; or a third stop layer that is deposited over the filter layer. A rib pattern is formed in the rib layer. The first and second wafers are flip bonded such that the rib pattern is joined between the filter layer and the first stop layer. Elongated voids are formed within the filter layer. The base support structure is formed within the substrate of the first wafer such that there is a fluid flow path between the base support structure, the rib layer, and the elongated voids of the filter layer.

公开(公告)号：US11724233B2

公开(公告)日：2023-08-15

申请号：US16924839

申请日：2020-07-09

Applicant: Seagate Technology LLC

Inventor： Thomas Young Chang ,  Kim Yang Lee ,  Tan G. Liu ,  Yautzong Hsu ,  Shuaigang Xiao

IPC: B01D61/02 ,  B01D67/00 ,  B01D61/14 ,  B01D69/02 ,  B01D71/02 ,  B01D69/06 ,  B01D69/10 ,  B01D46/10 ,  B01D69/12

CPC classification number: B01D67/0062 ,  B01D61/145 ,  B01D69/02 ,  B01D69/06 ,  B01D71/02

Abstract: A first wafer has a first stop layer deposited on a substrate, the substrate used to form a base support structure. A second wafer has a second stop layer deposited on a sacrificial substrate, and a filter layer deposited on the second stop layer. A rib layer is deposited on one of: the first stop layer of the first layer; or a third stop layer that is deposited over the filter layer. A rib pattern is formed in the rib layer. The first and second wafers are flip bonded such that the rib pattern is joined between the filter layer and the first stop layer. Elongated voids are formed within the filter layer. The base support structure is formed within the substrate of the first wafer such that there is a fluid flow path between the base support structure, the rib layer, and the elongated voids of the filter layer.