公开(公告)号：EP4246555A1

公开(公告)日：2023-09-20

申请号：EP23161962.8

申请日：2023-03-15

Applicant: Sensor Electronic Technology, Inc.

Inventor： JAIN, Rakesh B. ,  LACHAB, Mohamed ,  DION, Joseph ,  ROBINSON, Brandon Alexander ,  DIWAN, Devendra ,  GEPPERT, Mark

IPC: H01L21/20

Abstract: A solution for fabricating a semiconductor structure and the corresponding semiconductor structure are provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.