公开(公告)号：US20170256591A1

公开(公告)日：2017-09-07

申请号：US14914650

申请日：2015-12-28

Applicant: Shenzhen China Star Optelectronics Technology Co., Ltd.

Inventor： Dongze Li

IPC: H01L27/32 ,  G02F1/1335 ,  H01L33/50

CPC classification number: G02F1/133516 ,  G02F1/0063 ,  G02F1/015 ,  G02F1/133514 ,  G02F1/133617 ,  G02F2001/0155 ,  G02F2001/133519 ,  G02F2201/08 ,  G02F2202/04 ,  G02F2202/36 ,  G02F2203/58 ,  H01L27/322 ,  H01L33/504 ,  H01L2933/0041

Abstract: The invention discloses a QD CF substrate and manufacturing method thereof. The manufacturing method uses a patterned photo-resist layer as a masking layer to perform selective quenching on QD layer with a quencher to obtain selectively quenched QD layer, which simplifies QD CF substrate manufacturing process and reduces cost. The QD CF substrate does not use blue QD material in QD layer, but uses blue backlight and organic transparent photo-resist layer to improve light utilization efficiency and reduce material cost. The QD layer is a selectively quenched QD layer, and the portion of the QD layer located above the organic transparent photo-resist layer is quenched by the quencher, and will not emit light when excited by backlight. As such, the invention achieves using the QD material to improve color gamut and brightness, avoid color impurity at blue sub-pixels caused by light mixture, and the manufacturing method is simple.