公开(公告)号：US09551669B2

公开(公告)日：2017-01-24

申请号：US14204113

申请日：2014-03-11

Applicant: Sof-Tek Integrators, Inc.

Inventor： Daniel C. Morrow ,  Jonathan Dummer ,  Stanley Curtis Dodds

IPC: G01J3/50 ,  G01N21/66 ,  G01N21/21 ,  G01N21/84 ,  G01N21/95 ,  G01J1/42 ,  G01R31/26

CPC classification number: G01N21/66 ,  G01J3/501 ,  G01J3/505 ,  G01J2001/4252 ,  G01N21/21 ,  G01N21/8422 ,  G01N21/9501 ,  G01R31/2635

Abstract: Embodiments as disclosed herein provide a method and system that characterizes physical properties, such as thickness, uniformity, polarization, and/or sizes and locations of defect (e.g. defect density distribution) of crystalline structures grown on or thin films deposited on a substrate of a solid state light emitting device. The embodiments disclosed herein generally include exciting the light emitting device with an energy source and analyze optical energy emitted by the crystalline structures grown on or the thin films deposited on the substrate.

Abstract translation: 本文公开的实施方案提供了一种方法和系统，其特征在于物理性质，例如厚度，均匀性，极化，和/或尺寸和位于生长在沉积在基底上的薄膜上的晶体结构的缺陷（例如，缺陷密度分布） 固态发光器件。 本文公开的实施例通常包括用能量源激发发光器件并分析由沉积在衬底上的薄膜上生长的晶体结构发射的光能。