公开(公告)号：US20150380592A1

公开(公告)日：2015-12-31

申请号：US14749334

申请日：2015-06-24

Applicant: Soitec

Inventor： Fred Newman ,  Frank Reinhardt ,  Chantal Arena

IPC: H01L31/0687 ,  H01L31/18 ,  H01L31/0693

CPC classification number: H01L31/0687 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/043 ,  H01L31/0693 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

Abstract: A method of fabricating a semiconductor structure includes the formation of a first bonding layer at least substantially comprised of a first III-V material on major a surface of a first element, and formation of a second bonding layer at least substantially comprised of a second III-V material on a major surface of a second element. The first bonding layer and the second bonding layer are disposed between the first element and the second element, and the first element and the second element are attached to one another at a bonding interface disposed between the first bonding layer and the second bonding layer. Semiconductor structures are fabricated using such methods.

Abstract translation: 制造半导体结构的方法包括在第一元件的主表面上形成至少基本上由第一III-V材料构成的第一结合层，以及形成至少基本上由第二III -V材料在第二元件的主表面上。 第一接合层和第二接合层设置在第一元件和第二元件之间，并且第一元件和第二元件在设置在第一接合层和第二接合层之间的接合界面处彼此附接。 使用这种方法制造半导体结构。

公开(公告)号：US10014429B2

公开(公告)日：2018-07-03

申请号：US14749334

申请日：2015-06-24

Applicant: Soitec

Inventor： Fred Newman ,  Frank Reinhardt ,  Chantal Arena

IPC: H01L31/06 ,  H01L31/04 ,  H01L31/18 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/0304 ,  H01L31/043

CPC classification number: H01L31/0687 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/043 ,  H01L31/0693 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

Abstract: A method of fabricating a semiconductor structure includes the formation of a first bonding layer at least substantially comprised of a first III-V material on a major surface of a first element, and formation of a second bonding layer at least substantially comprised of a second III-V material on a major surface of a second element. The first bonding layer and the second bonding layer are disposed between the first element and the second element, and the first element and the second element are attached to one another at a bonding interface disposed between the first bonding layer and the second bonding layer. Semiconductor structures are fabricated using such methods.