公开(公告)号：JPS5263689A

公开(公告)日：1977-05-26

申请号：JP13950975

申请日：1975-11-20

Applicant: SONY CORP

Inventor： MITA ARIO

IPC: H01L47/02 ,  H01L21/28

Abstract: PURPOSE:To accurately foresee characteristics by depositing a metal layer forming Schottky barrier on an active region such as Gunn diode, obtaining a capacity-voltage curve using this, knowing the characteristics of the semiconductor layer to become an active region from this curve, thereafter forming an ohmic contact of the metal layer through heat treatment.

公开(公告)号：JPS6342406B2

公开(公告)日：1988-08-23

申请号：JP3011381

申请日：1981-03-03

Applicant: SONY CORP

Inventor： NISHAMA KAZUO ,  KOBAYASHI TAKAO ,  KASHIWANUMA AKIO ,  MITA ARIO

IPC: H01C17/06 ,  H01L21/20 ,  H01L21/26 ,  H01L21/265 ,  H01L21/324

公开(公告)号：JPS61113246A

公开(公告)日：1986-05-31

申请号：JP23583784

申请日：1984-11-07

Applicant: Sony Corp

Inventor： MITA ARIO ,  ISHIKAWA MASAMICHI

IPC: H01L21/52 ,  H01L21/58

CPC classification number: H01L24/83 ,  H01L24/32 ,  H01L24/75 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PURPOSE:To cut down the production cost by means of bonding all semiconductor chips simultaneously by a method wherein a semiconductor chips are arranged on the chip bonding part through the intermediary of an adhesive layer to be heated and molten. CONSTITUTION:A solder layer 4 is formed on the laser chip connecting part of each element forming region 2. The solder layer 4 is composed of tin formed on a metallic layer such as e.g. gold, nickel etc. easily adaptable to solder. A semiconductor laser chip 7 is located on the solder layer 4 while a semiconductor substrate 1 is heated by means of passing it through a tunnel furnace or inserting it into a vacuum baking furnace to bond the semiconductor laser chip 7 on the laser chip connecting part of semiconductor substrate 1 through the intermediary of the solder layer 4. Through these procedures, the production cost of semiconductor device may be cut down remarkably since all semiconductor laser chips 7 for overall element forming regions on the substrate 1 are bonded simultaneously.

Abstract translation: 目的：通过半导体芯片通过中间加热和熔融的粘合剂层将半导体芯片布置在芯片接合部分上的方法，同时通过连接所有半导体芯片来降低生产成本。 构成：在每个元件形成区域2的激光芯片连接部分上形成焊料层4.焊料层4由形成在金属层上的锡构成。 金，镍等易于焊接。 半导体激光器芯片7位于焊料层4上，半导体衬底1通过隧道炉加热或将其插入真空烘烤炉中来加热半导体衬底1，以将半导体激光器芯片7与激光芯片连接部分 半导体衬底1通过焊料层4的中间。通过这些步骤，由于用于衬底1上的整个元件形成区域的所有半导体激光器芯片7同时结合，所以可以显着地削减半导体器件的生产成本。

公开(公告)号：JPS60101937A

公开(公告)日：1985-06-06

申请号：JP20887983

申请日：1983-11-07

Applicant: SONY CORP

Inventor： TAKAHASHI SADAYOSHI ,  MITA ARIO ,  MAKIGUCHI SHIGEE

IPC: H01L21/52 ,  H01L21/58 ,  H01S5/02 ,  H01S5/022

Abstract: PURPOSE:To facilitate to mount each element on a heat sink by forming a plurality of semiconductor elements on a semiconductor substrate; applying a transfer sheet provided with soldering material patterns closely to the elements; heating them to transfer the soldering material onto the elements; and seperating the elements individually. CONSTITUTION:A multiplicity of soldering material patterns 12 are formed on a transfer sheet 11 made of a W plate having a poor wettability to the soldering material. Bar-shaped semiconductor substrates 13 obtained by cutting a wafer provided with laser diode elements are fixed on the sheet 11. In this case, the patterns 12 are formed slightly smaller in size than the diode elements, and are aligned with them precisely. The assembly is heated in reducing atomsphere containing hydrogen gas to a temperature high than the melting point of the soldering material so as to transfer the pattern 12 to each element. These elements are then cut off individually. The element thus obtained 13A is adhered on a heat sink 15 through the pattern 12.

公开(公告)号：JPS5635486A

公开(公告)日：1981-04-08

申请号：JP11085779

申请日：1979-08-30

Applicant: SONY CORP

Inventor： AYABE MASAAKI ,  KANEKO KUNIO ,  MITA ARIO

IPC: H01L21/265 ,  H01S5/00 ,  H01S5/223

Abstract: PURPOSE:To obtain a stable oscillation by forming a reverse conductivity type or semi-insulating layer on the stepwise top of the semiconductor substrate and effectively concentrating a current in an active layer in the vicinity of the step. CONSTITUTION:A P type GaAs 60 is formed on an N type GaAs substrate 2, and with an SiO2 mask is etched, and the step 13 is formed thereon. An N type Ga1-X AlX As 4, a P type GaAs active layer 5, a P type Ga1-XAlXAs 6, and a P type GaAs 7 are laminated thereon. An opening 62 is perforated at an SiO2 film 63, an electrode 64 is perforated thereat, and an electrode 65 is fitted therethrough on the substrate 2. According to this configuration, an electric current flows effectively concentrically from the electrode 64 through the rightside of the step of the P type layer 60 to the electrode 65 as designated by an imaginary line 66, and the layer 60 thus prevents branching of the current. In this manner stable oscillation can be obtained, the extension of the laser beam can be reduced, and the threshold current can be lowered. Further, the manufacturing work can be extremely performed satisfactorily.

公开(公告)号：JPS55141781A

公开(公告)日：1980-11-05

申请号：JP5009379

申请日：1979-04-23

Applicant: SONY CORP

Inventor： MITA ARIO

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/223

Abstract: PURPOSE:To enclose a light irradiated from pn junction of a semiconductor laser from four directions by forming the second conducting type semiconductor layer forming pn junction by crossing the active layer in the vicinity of a step of semiconductor. CONSTITUTION:A step 13 inclined on one main surface is formed on a semi-insulating substrate 12. An n -type Ga0.6Al0.4As layer 14 as the first enclosure layer, an n-type GaAs layer 15 as an active layer, an n -type Ga0.6Al0.4As layer 16 as the second enclosure layer, and an n -type GaAs layer 17 as an uppermost layer are sequentially formed in liquid phase growth thereon. P-type impurity ion is implanted onto the layer 17 to form a pn junction 20 intersecting laterally the layer 15 inclined in the vicinity of the step 13. A proton H 22 is implanted using a mask 21 to form an insulator 23 reaching the layer 16. The mask 21 is removed, and ohmic electrodes 25, 26 are formed on the p-type layers 19 and 17, respectively. The irradiated light is enlcosed in the junction 20 substantially in four directions as designated by arrows.

公开(公告)号：JPH0345534B2

公开(公告)日：1991-07-11

申请号：JP8443180

申请日：1980-06-20

Applicant: SONY CORP

Inventor： MORISANE KENJI ,  MORI YOSHIFUMI ,  MITA ARIO ,  NISHAMA KAZUO

IPC: H01L21/31 ,  C23C16/48 ,  H01L21/265 ,  H01L21/316

公开(公告)号：JPS63253676A

公开(公告)日：1988-10-20

申请号：JP8836287

申请日：1987-04-10

Applicant: SONY CORP

Inventor： AKIYAMA TOMI ,  MITA ARIO

IPC: H01L33/62

Abstract: PURPOSE:To obtain a cap with a light-transmission window through one-time fabrication process by sealing a light-emitting device supported by a header with the cap, which consists of a transparent material and to which the light- transmission window is formed integrally. CONSTITUTION:A header 1 is shaped through injection molding under the state in which a lead frame 12 is inserted into a molding die for forming the header. A light-transmission window 9 for a cap 7 is shaped by indenting the surface and rear of a head section 8 at central sections. Consequently, sections 15, 15, to which the light-transmission windows 9 are formed, in molds 13, 14 are formed to a protruding shape, and are easy to be ground. As a result, both surfaces of the light-transmission windows 9 in the cap 7 can be shaped in an excellent optical face. With a semiconductor laser used as a light source, the cap 7 is formed by a transparent resin, and the light-transmission windows 7 are shaped integrally with the cap 7. Accordingly, the cap 7 with the light- transmission windows 9 can be shaped through one-time resin fabrication.

公开(公告)号：JPS6195591A

公开(公告)日：1986-05-14

申请号：JP21679084

申请日：1984-10-16

Applicant: Sony Corp

Inventor： AYABE MASAAKI ,  MITA ARIO ,  MATSUDA OSAMU

IPC: H01S5/00 ,  H01S5/022 ,  H01S5/026

CPC classification number: H01S5/02248 ,  H01L2224/48091 ,  H01S5/0683 ,  H01L2924/00014

Abstract: PURPOSE: To simply inspect and measure whether an FFP has a symmetry or not even at the stage that it is not yet mounted on a heat sink or a header by forming a plurality of photodetectors for receiving the laser light from a semiconductor laser on the surface of a semiconductor substrate, thereby accurately positioning and bonding the chip to the substrate.
CONSTITUTION: Three PIN photodiodes PDl, PDc, PDr are disposed in parallel with a center line 6 of a semiconductor substrate 1 on the surface of a monitor region 7 of the substrate 1. A probe 9l is contacted with the surface of the photodiode PDl of the left side as seen from a semiconductor laser chip 2 side, a probe 9l is contacted with the surface of the photodiode PDr of the right side, reverse bias voltage of the same value is applied individually to the photodiodes PDl and PDr to detect the photocurrents flowed to the photodiodes PDl and PDr at that time, thereby comparing the photocurrents. If there is no difference exceeding the allowable preset range between the photocurrents, the laser is judged as having symmetry in the FFP.
COPYRIGHT: (C)1986,JPO&Japio

Abstract translation: 目的：为了简单地检查和测量FFP是否具有对称性，即使在尚未安装在散热器或集管上的阶段，通过形成多个用于从表面上的半导体激光器接收激光的光电检测器 的半导体衬底，从而将芯片精确地定位并结合到衬底。 构成：三个PIN光电二极管PD1，PDc，PDr与衬底1的监测区域7的表面上的半导体衬底1的中心线6平行设置。探针9l与光电二极管PD1的表面接触 从半导体激光器芯片2侧观察的左侧，探针9l与右侧的光电二极管PDr的表面接触，将相同值的反向偏置电压分别施加到光电二极管PD1和PDr以检测光电流 此时流向光电二极管PD1和PDr，从而比较光电流。 如果在光电流之间没有超过允许的预设范围的差异，则在FFP中判断激光具有对称性。

公开(公告)号：JPS6188588A

公开(公告)日：1986-05-06

申请号：JP21078984

申请日：1984-10-08

Applicant: Sony Corp

Inventor： MITA ARIO

IPC: H01S5/00

Abstract: PURPOSE: To bond semiconductor laser chips simultaneously with a large number of light-receiving elements by bonding the semiconductor laser chips to laser chip connecting sections in each element forming region to a wafer-shaped semiconductor substrate.
CONSTITUTION: Photodiodes 3 are formed in several element forming region 2 in a semiconductor substrate 1, and solder layers 4 are shaped to laser chip connecting sections in each region 2. Grooves 9 are shaped along substrate- latticed half dicing lines 8 from the surface in the substrate 1. Semiconductor laser chips 10 are positioned onto the layers 4 in respective region 2, and the chips 10 are bonded with the laser chip connecting sections in the substrate 1 through the layers 4 through heating. The substrate 1 is broken by the groove 9 and divided into several pellet 11. According to said manufacture, the semiconductor laser chips can be bonded with a large number of light-receiving elements shaped to one wafer at the same time. Consequently, the chips can be bonded extremely simply.
COPYRIGHT: (C)1986,JPO&Japio

Abstract translation: 目的：通过将半导体激光器芯片与每个元件形成区域中的激光芯片连接部分接合到晶片状半导体基板，将半导体激光器芯片与大量的光接收元件同时接合。 构成：在半导体衬底1中的几个元件形成区域2中形成光电二极管3，并且将焊料层4成形为每个区域2中的激光芯片连接部分。沟槽9沿着衬底 - 网格半切割线8从表面 基板1.半导体激光芯片10位于相应区域2中的层4上，并且芯片10通过加热通过层4与基板1中的激光芯片连接部分接合。 基板1被凹槽9断开并分成几个颗粒11.根据所述制造，半导体激光芯片可以与大量同时成形为一个晶片的光接收元件结合。 因此，可以非常简单地结合芯片。