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公开(公告)号：KR830000135A
公开(公告)日：1983-03-25
申请号：KR740000086
申请日：1974-01-01
Applicant: SONY CORP
Inventor： MAKINO YOSHIMI , OKAMOTO TSUTOMU
IPC: H01L43/08
Abstract: The magneto-resistive element which is composed of two ferromagnets (A, B) having the magneto-resistance effect, is disclosed and all the merits of a planar hole device and a magneto resistive element. Two ferromagnets A and B are connected in series, and arranged at a right angle, and the output (4) is obtained between A and B. The current source of the magneto resistive element is installed in the opposite side of the output (5).
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公开(公告)号：US3928836A
公开(公告)日：1975-12-23
申请号：US48728274
申请日：1974-07-10
Applicant: SONY CORP
Inventor： MAKINO YOSHIMI , OKAMOTO TSUTOMU , KAMIYA IWAO
IPC: G01B7/00 , G01B7/30 , G01D5/18 , G01P3/487 , G01R33/09 , G11B5/02 , H01C10/00 , H01L43/08 , H01C7/16
CPC classification number: H01L43/08 , G01R33/09 , Y10T29/49085
Abstract: A magnetoresistive element of an insulating substrate, a first current conducting ferromagnetic metal film strip on said substrate and having a current carrying ability predominantly in one direction, a second current carrying ferromagnetic metal film strip on the substrate having a current carrying ability predominantly in a direction substantially perpendicular to the aforementioned direction, the ends of said strips being connected together, with a current input terminal connected to the opposed ends of the strips and an output terminal connected to the junction between the two strips.
Abstract translation: 一种绝缘衬底的磁阻元件，在所述衬底上的第一导电铁磁性金属薄膜带，其主要在一个方向上具有载流能力，第二电流在衬底上承载强磁性金属膜带，其主要在方向 基本上垂直于上述方向，所述条的端部连接在一起，电流输入端连接到条的相对端，以及连接到两条之间的连接处的输出端。
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公开(公告)号：EP0129605A4
公开(公告)日：1987-01-22
申请号：EP84900111
申请日：1983-12-20
Applicant: SONY CORP
Inventor： KANEKO MASAHIKO SONY CORPORATI , TAMADA HITOSHI , OKAMOTO TSUTOMU , YAMADA TOSHIRO
IPC: G11B11/105 , G11B5/02
CPC classification number: G11B11/10504 , G11B11/10515 , G11B11/10536 , G11B11/10589
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公开(公告)号：CA1021065A
公开(公告)日：1977-11-15
申请号：CA204653
申请日：1974-07-12
Applicant: SONY CORP
Inventor： MAKINO YOSHIMI , OKAMOTO TSUTOMU , KAMIYA IWAO
Abstract: A magnetoresistive element of an insulating substrate, a first current conducting ferromagnetic metal film strip on said substrate and having a current carrying ability predominantly in one direction, a second current carrying ferromagnetic metal film strip on the substrate having a current carrying ability predominantly in a direction substantially perpendicular to the aforementioned direction, the ends of said strips being connected together, with a current input terminal connected to the opposed ends of the strips and an output terminal connected to the junction between the two strips.
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公开(公告)号：DE69325742D1
公开(公告)日：1999-09-02
申请号：DE69325742
申请日：1993-05-12
Applicant: SONY CORP
Inventor： OKAMOTO TSUTOMU , WATANABE KOJI , FUKUI TATSUO , MINOYA YASUSHI , TATSUKI KOICHI , KUBOTA SHIGEO
Abstract: A method of growing a single crystal of KTiOPO4 which is a nonlinear optical material is disclosed. Growth of the single crystal of KTiOPO4 is carried out by melting a KTiOPO4 material with a flux to produce a melt, then contacting a seed crystal to the melt, and by slowly cooling at a saturation temperature or below. At this time, molar fractions of K2O, P2O5 and TiO2 contained in the melt fall within a region surrounded by six points in a K2O-P2O5-TiO2 ternary phase diagram of A (K2O: 0.4150, P2O5: 0.3906, TiO2: 0.1944), B (K2O: 0.3750, P2O5: 0.3565, TiO2: 0.2685), C (K2O: 0.3750, P2O5: 0.3438, TiO2: 0.2813), D (K2O: 0.3850, P2O5: 0.3260, TiO2: 0.2890), E (K2O: 0.4000, P2O5: 0.3344, TiO2: 0.2656), and F (K2O: 0.4158, P2O5: 0.3744, TiO2: 0.2098). In addition, K15P13O40 or the same composition produced by melting is used as the flux, and the proportion of a KTiOPO4 element in a composition of the melt is prescribed to 83.5 to 90.0 mol%. The seed crystal is set so that a C axis is in a direction perpendicular to a melt surface. Then, the seed crystal contacted to the melt is rotated and slowly cooled. Thus, a single crystal of KTiOPO4 of single domain at the end of growth can be produced.
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Patent Agency Ranking
公开(公告)号：CA1313693C
公开(公告)日：1993-02-16
申请号：CA584141
申请日：1988-11-25
Applicant: SONY CORP
Inventor： MURAKAMI YOSHIKAZU , MIZUNUMA YASUYUKI , OHGIHARA TAKAHIRO , NAKANO HIROYUKI , NIIKURA KANAKO , OKAMOTO TSUTOMU
Abstract: A tuned oscillator utilizing a thin film ferromagnetic resonator is disclosed. The oscillator comprises an active element for oscillator and a YIG thin film resonator connected to the active element as a part of feed-back circuit for the active element. The YIG thin film resonator is applied with a bias magnetic field perpendicular to a surface of a YIG disk which is generated by a permanent magnet for a fixed component and a coil for a variable component for the resonance frequency. The resonance frequency is stabilized by use of a PLL circuit connected to an output of the oscillator and feeding back to the coil. Since the YIG thin film tuned oscillator has a high Q value, high quality communication signal processing can be achieved. The YIG tuned oscillator is used as local oscillator for a transciever.
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公开(公告)号：FR2602619B1
公开(公告)日：1992-09-04
申请号：FR8709423
申请日：1987-07-02
Applicant: SONY CORP
Inventor： MURAKAMI YOSHIKAZU , OGIHARA TAKAHIRO , OKAMOTO TSUTOMU , NIIKURA KANAKO
Abstract: A ferromagnetic resonance device is disclosed which utilize the perpendicular resonance of ferrimagnetic YIG thin film operable under a D.C. bias magnetic field perpendicular to a major surface of the YIG thin film element. By making the YIG thin film to have a major surface thereof (100) crystal plane of YIG or (111) crystal plane of a substituted YIG having reduced Ku value, lower limit of resonance frequency is extremely lowered. Thus wide range variable filter device can be obtained.
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公开(公告)号：DE3381184D1
公开(公告)日：1990-03-08
申请号：DE3381184
申请日：1983-09-26
Applicant: SONY CORP
Inventor： KANEKO MASAHIRO , TAMADA HITOSHI , OKAMOTO TSUTOMU , YAMADA TOSHIRO
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公开(公告)号：CA1105743A
公开(公告)日：1981-07-28
申请号：CA314934
申请日：1978-10-30
Applicant: SONY CORP
Inventor： MAKINO YOSHIMI , OKAMOTO TSUTOMU
Abstract: An alloy for a magnetoresistive element has an ordered phase with superstructure and consists of nickel and cobalt atoms, and the ratio of the nickel atoms to the cobalt atoms by the number of atoms is substantially within the range of 40 : 60 to 60 : 40. A method of manufacturing an alloy for a magnetoresistive element includes the steps of preparing a substrate for a magnetoresistive element, and forming so a nickel-cobalt alloy film on the substrate at the temperature of more than 250.degree.C that the alloy has an ordered phase with superstructure and the ratio of the nickel atoms to the cobalt atoms by the number of atoms is within the range of 40 : 60 to 60 : 40.
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公开(公告)号：DE69325742T2
公开(公告)日：2000-02-10
申请号：DE69325742
申请日：1993-05-12
Applicant: SONY CORP
Inventor： OKAMOTO TSUTOMU , WATANABE KOJI , FUKUI TATSUO , MINOYA YASUSHI , TATSUKI KOICHI , KUBOTA SHIGEO
Abstract: A method of growing a single crystal of KTiOPO4 which is a nonlinear optical material is disclosed. Growth of the single crystal of KTiOPO4 is carried out by melting a KTiOPO4 material with a flux to produce a melt, then contacting a seed crystal to the melt, and by slowly cooling at a saturation temperature or below. At this time, molar fractions of K2O, P2O5 and TiO2 contained in the melt fall within a region surrounded by six points in a K2O-P2O5-TiO2 ternary phase diagram of A (K2O: 0.4150, P2O5: 0.3906, TiO2: 0.1944), B (K2O: 0.3750, P2O5: 0.3565, TiO2: 0.2685), C (K2O: 0.3750, P2O5: 0.3438, TiO2: 0.2813), D (K2O: 0.3850, P2O5: 0.3260, TiO2: 0.2890), E (K2O: 0.4000, P2O5: 0.3344, TiO2: 0.2656), and F (K2O: 0.4158, P2O5: 0.3744, TiO2: 0.2098). In addition, K15P13O40 or the same composition produced by melting is used as the flux, and the proportion of a KTiOPO4 element in a composition of the melt is prescribed to 83.5 to 90.0 mol%. The seed crystal is set so that a C axis is in a direction perpendicular to a melt surface. Then, the seed crystal contacted to the melt is rotated and slowly cooled. Thus, a single crystal of KTiOPO4 of single domain at the end of growth can be produced.
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