公开(公告)号：DE69325742D1

公开(公告)日：1999-09-02

申请号：DE69325742

申请日：1993-05-12

Applicant: SONY CORP

Inventor： OKAMOTO TSUTOMU ,  WATANABE KOJI ,  FUKUI TATSUO ,  MINOYA YASUSHI ,  TATSUKI KOICHI ,  KUBOTA SHIGEO

IPC: C30B15/00 ,  C30B9/00 ,  C30B29/22 ,  C30B29/32 ,  G02F1/35 ,  G02F1/355 ,  C30B29/14

Abstract: A method of growing a single crystal of KTiOPO4 which is a nonlinear optical material is disclosed. Growth of the single crystal of KTiOPO4 is carried out by melting a KTiOPO4 material with a flux to produce a melt, then contacting a seed crystal to the melt, and by slowly cooling at a saturation temperature or below. At this time, molar fractions of K2O, P2O5 and TiO2 contained in the melt fall within a region surrounded by six points in a K2O-P2O5-TiO2 ternary phase diagram of A (K2O: 0.4150, P2O5: 0.3906, TiO2: 0.1944), B (K2O: 0.3750, P2O5: 0.3565, TiO2: 0.2685), C (K2O: 0.3750, P2O5: 0.3438, TiO2: 0.2813), D (K2O: 0.3850, P2O5: 0.3260, TiO2: 0.2890), E (K2O: 0.4000, P2O5: 0.3344, TiO2: 0.2656), and F (K2O: 0.4158, P2O5: 0.3744, TiO2: 0.2098). In addition, K15P13O40 or the same composition produced by melting is used as the flux, and the proportion of a KTiOPO4 element in a composition of the melt is prescribed to 83.5 to 90.0 mol%. The seed crystal is set so that a C axis is in a direction perpendicular to a melt surface. Then, the seed crystal contacted to the melt is rotated and slowly cooled. Thus, a single crystal of KTiOPO4 of single domain at the end of growth can be produced.

公开(公告)号：DE69325742T2

公开(公告)日：2000-02-10

申请号：DE69325742

申请日：1993-05-12

Applicant: SONY CORP

Inventor： OKAMOTO TSUTOMU ,  WATANABE KOJI ,  FUKUI TATSUO ,  MINOYA YASUSHI ,  TATSUKI KOICHI ,  KUBOTA SHIGEO

IPC: C30B15/00 ,  C30B9/00 ,  C30B29/22 ,  C30B29/32 ,  G02F1/35 ,  G02F1/355 ,  C30B29/14

Abstract: A method of growing a single crystal of KTiOPO4 which is a nonlinear optical material is disclosed. Growth of the single crystal of KTiOPO4 is carried out by melting a KTiOPO4 material with a flux to produce a melt, then contacting a seed crystal to the melt, and by slowly cooling at a saturation temperature or below. At this time, molar fractions of K2O, P2O5 and TiO2 contained in the melt fall within a region surrounded by six points in a K2O-P2O5-TiO2 ternary phase diagram of A (K2O: 0.4150, P2O5: 0.3906, TiO2: 0.1944), B (K2O: 0.3750, P2O5: 0.3565, TiO2: 0.2685), C (K2O: 0.3750, P2O5: 0.3438, TiO2: 0.2813), D (K2O: 0.3850, P2O5: 0.3260, TiO2: 0.2890), E (K2O: 0.4000, P2O5: 0.3344, TiO2: 0.2656), and F (K2O: 0.4158, P2O5: 0.3744, TiO2: 0.2098). In addition, K15P13O40 or the same composition produced by melting is used as the flux, and the proportion of a KTiOPO4 element in a composition of the melt is prescribed to 83.5 to 90.0 mol%. The seed crystal is set so that a C axis is in a direction perpendicular to a melt surface. Then, the seed crystal contacted to the melt is rotated and slowly cooled. Thus, a single crystal of KTiOPO4 of single domain at the end of growth can be produced.

公开(公告)号：JP2002341269A

公开(公告)日：2002-11-27

申请号：JP2001142309

申请日：2001-05-11

Applicant: SONY CORP

Inventor： FUKUI TATSUO ,  IKEDA KOICHI

IPC: G03B21/00 ,  B81B3/00 ,  B81C1/00 ,  G02B26/08

Abstract: PROBLEM TO BE SOLVED: To provide an optical modulating element which has high light efficiency and reliability and an optical device which uses the same, and to provide a manufacturing method for the optical modulating element which can manufacture the optical modulating element at high yield. SOLUTION: The optical modulating element 10 is constituted by arraying ribbon-shaped diffraction parts 20 equipped with reflecting surfaces 16a in parallel along the length. Each diffraction part 20 itself has a reflecting layer 16, a 1st dielectric layer 17, and a 2nd dielectric layer 18 formed on a structure 15 and this part is displaced at right angles to the substrate 11 and functions as a diffracting surface to modulate the angle, intensity, and phase of incident light. The numbers of layers, materials, and thickness of the dielectric layers 17 and 18 are specified in designing while the incidence wavelength and the total stress of the diffraction parts 20 are taken into consideration. Consequently, the reflection factor of the diffraction parts 20 is enhanced to suppress the light absorption and heat generation by the reflecting layers 16 of Al, and the reflecting layers 16 are protected during washing and resist removal.

公开(公告)号：JPH11295772A

公开(公告)日：1999-10-29

申请号：JP10512498

申请日：1998-04-15

Applicant: SONY CORP

Inventor： KUBOTA SHIGEO ,  UMETSU NOBUHIKO ,  FUKUI TATSUO ,  MASUDA HISASHI ,  TATSUKI KOICHI

IPC: F25B9/00 ,  G02F1/37

Abstract: PROBLEM TO BE SOLVED: To make it possible to achieve a laser beam source having wavelengths of 200 nm or shorter at a practical level by using a BBO(β-BaB2 O4 ) crystal device. SOLUTION: This device is provided with, for example, a 1st laser beam source 1 of Nb:YAG laser oscillating in a near infrared region, a 2nd harmonic generating means 2 for generating the 2nd harmonic of a half wavelength of the 1st laser beam source, a dividing means 3 for dividing the 2nd harmonic, a 2nd laser beam source 4 for inputting a part of the divided 2nd harmonic into Ti:Sapphire laser for excitation oscillation to generate laser beam of about 700 nm wavelength, a 4th harmonic generating means 5 for generating the 4th harmonic from a remaining part of the 2nd harmonic, and a summed frequency mixing means composed of a BBO crystal device, which is temperature- controlled, for instance, about at 100 K or lower, for inputting the laser beam of approximately 700 nm wavelengths and the 4th harmonic. Here, laser beam of approximately 193 nm wavelength is obtained as an output of the summed frequency mixing means 6.

公开(公告)号：JPH10267623A

公开(公告)日：1998-10-09

申请号：JP7429797

申请日：1997-03-27

Applicant: SONY CORP

Inventor： SUGIURA MINAKO ,  FUKUI TATSUO ,  EGUCHI NAOYA

IPC: G01B11/14

Abstract: PROBLEM TO BE SOLVED: To measure a very short interval with good accuracy by a method wherein a change in an optical intensity in a direction crossing a reflecting face is processed so s to correspond to a value obtained by multiplying an amplitude component delending on the spectrum intensity distribution of illumination light and on a very short distance by a periodic-function component which is changed according to the very short distance with reference to the wavelength of the illumination light. SOLUTION: In a state that a simulation head 221 is arranged, white light from a light source 4 is converted into guasi-monochromatic light by using a filter 5 so as to irradiate the simulation had 21. Obtained reflected light Ia is received by a CCD slid-state imaging element 9 so as to be held on a frame memory 10. A magnetic tape 2 is arranged so as to face the simulation head 21, and the simulation head 21 is irradiated with the quasi- monochromatic light in the same manner so as to form interference fringes. Interference light is received by the imaging element 9 so as to be held on the memory 10 as measured luminance data. The change component of a luminance level is extracted from a luminance distribution by the interference fringes. The luminance distribution of reflected light Ib is computed the basis of the luminance distribution of the reflected light Ia obtained by the simulation head 21, and the change component is removed. Only a component obtained by multiplying an amplitude component by a periodic-function component is detected on the basis of a measured result, and a space is computed.

公开(公告)号：JPH08201744A

公开(公告)日：1996-08-09

申请号：JP1478495

申请日：1995-01-31

Applicant: SONY CORP

Inventor： KIKUCHI HIROKI ,  FUKUI TATSUO

IPC: G02F1/03

Abstract: PURPOSE: To avert the deterioration in an electro-optical modulation element with simple constitution. CONSTITUTION: This electro-optical modulator modulates incident light on the electro-optical modulation element, for example, a laser beam by impressing an optical modulation driving voltage on a first KTiOPO4 (KTP) 11 and second KTP 12 as the electro-optical modulation element. The electro-optical modulator described above has electrode layers 1a, 1b which are disposed on a pair of the parallel planes of the electro-optical modulation element and are disposed on the first KTP 11 as the electrode films to be impressed with the optical modulation voltage, electrode layers 1c, 1d which are disposed on the second KTP 12, an insulating layer 2a which is arranged between at least one of the electrode films and the electro-optical modulation element and is disposed between the electrode layer 1a and the first KTP 11 as an insulating film composed of an insulator and an insulating layer 2b which is disposed between the electrode layer 1c and the second KTP 12.

公开(公告)号：JP2007133445A

公开(公告)日：2007-05-31

申请号：JP2007043453

申请日：2007-02-23

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KANEDA YUJI ,  TATSUKI KOICHI ,  UMETSU NOBUHIKO ,  FUKUI TATSUO

IPC: G02F1/37

Abstract: PROBLEM TO BE SOLVED: To provide a wavelength conversion device comprising a nonlinear optical crystal which is suitable for obtaining a fifth higher harmonic laser beam from a laser beam of fundamental wavelength, is excellent in thermal stability and has high reliability. SOLUTION: In the wavelength conversion device, the laser beam of fundamental wavelength is subjected to wavelength conversion into a laser beam including a second higher harmonic by using a first nonlinear optical crystal, the second higher harmonic separated from the laser beam is subjected to wavelength conversion into a fourth higher harmonic by using a second nonlinear optical crystal, and the fifth higher harmonic laser beam is obtained by sum frequency mixing of the fourth higher harmonic and the laser beam of fundamental wavelength by using a third nonlinear optical crystal, wherein, in at least the second nonlinear optical crystal 1 of the second and third nonlinear optical crystals, the thickness in the non-walk-off direction (y) of a laser beam is a size that does not clip the laser beam, is smaller than the width in the walk-off direction (x) of the laser beam, the width is larger than a spread of the laser beam due to walk-off and, further, an element 6 for temperature control is disposed on a crystal face at least in the non-walk-off direction (y). COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供一种包括非线性光学晶体的波长转换装置，其适用于从基波长的激光束获得第五高次谐波激光束，其热稳定性优异且可靠性高。 解决方案：在波长转换装置中，通过使用第一非线性光学晶体将基波长的激光束经受波长转换成包括第二高次谐波的激光束，从激光束分离的第二高次谐波被施加 通过使用第二非线性光学晶体将波长转换成第四高次谐波，并且通过使用第三非线性光学晶体，通过第四高次谐波和基波长的激光束的和频混频来获得第五高次谐波激光束，其中 在至少第二和第三非线性光学晶体的第二非线性光学晶体1中，激光束的非去除方向（y）的厚度是不夹住激光束的尺寸，小于 激光束的离开方向（x）的宽度，宽度大于由于脱离引起的激光束的扩展，并且还包括用于温度c的元件6 至少在非离开方向（y）处，将控制设置在晶体面上。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007033489A

公开(公告)日：2007-02-08

申请号：JP2005212184

申请日：2005-07-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KOIKE NOBUYUKI ,  FUKUI TATSUO

IPC: G02F1/03 ,  C30B29/30 ,  C30B33/04

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a ferroelectric crystal capable of heightening uniformity of single domain treatment and preventing diffusion of metal into the crystal and generation of a crack. SOLUTION: The manufacturing method of the ferroelectric crystal has a substrate preparing step S1, a step S2 for performing VTE (Vapor Transport Equilibration)-treatment of the prepared substrate, a step S3 for forming an electrode film on the substrate, a polarizing step S4 for polarizing the substrate in a single domain, an annealing treatment step S5 and the like. The electrode film is formed by using a sputtering film of a conductive oxide (ITO film). Thereby, adhesiveness of the electrode film and the substrate is heightened and uniformity of single domain treatment is heightened and differences of a thermal expansion coefficient and a diffusion coefficient between the crystal and the electrode both as oxides can be made not to be generated and thus generation of crack and diffusion of foreign metal in heating can be prevented and high quality of the device can be attained. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供能够提高单畴处理的均匀性并防止金属向晶体扩散并产生裂纹的铁电晶体的制造方法。 解决方案：铁电晶体的制造方法具有基板准备步骤S1，用于进行所制备的基板的VTE（蒸气传输平衡）处理的步骤S2，用于在基板上形成电极膜的步骤S3， 用于使单个区域中的衬底偏振的极化步骤S4，退火处理步骤S5等。 通过使用导电氧化物（ITO膜）的溅射膜形成电极膜。 由此，提高了电极膜和基板的粘合性，提高了单畴处理的均匀性，并且不能产生作为氧化物的晶体和电极之间的热膨胀系数和扩散系数的差异，并且因此产生 可以防止异种金属在加热中的裂纹扩散和高质量的装置。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006108501A

公开(公告)日：2006-04-20

申请号：JP2004295167

申请日：2004-10-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KIMURA KAORU ,  AZUMA KATSUHIRO ,  FUKUI TATSUO ,  OKA MICHIO

IPC: H01S5/022

Abstract: PROBLEM TO BE SOLVED: To provide an optical adjusting method of a laser unit which can comparatively simply obtain the laser unit in which a beam exiting position, a beam exiting direction, and a focal position of a laser output for use are highly accurately adjusted, and to provide an optical apparatus using the laser unit, and a method for assembling the optical apparatus.
SOLUTION: In the optical adjusting method of the laser unit 50 comprising at least a laser 1, an optical member 2, one or more holding members 3, 5 for holding the laser 1 and/or the optical member 2, and a heat discharging member 4, the optical member 2 is fixed on the holding member 3, the laser 1 is directly or indirectly thermally brought into contact with the heat discharging member 4, and in an exiting state of laser beam L, the exiting position and the exiting direction of the laser 1 to the optical member 2 are optically adjusted.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种激光单元的光学调节方法，其可以相对简单地获得激光单元，其中离开位置的光束出射方向和激光输出的焦点位置是高度的 并且提供使用激光单元的光学装置，以及组装光学装置的方法。 解决方案：在至少包括激光器1的激光单元50的光学调节方法中，光学构件2，用于保持激光器1和/或光学构件2的一个或多个保持构件3,5，以及 放热构件4，光学构件2固定在保持构件3上，激光器1直接或间接地热地与放热构件4接触，并且在激光束L的出射状态下，出射位置和 对光学构件2的激光器1的出射方向进行光学调节。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JPH0664995A

公开(公告)日：1994-03-08

申请号：JP36008492

申请日：1992-12-29

Applicant: SONY CORP

Inventor： OKAMOTO TSUTOMU ,  WATABE KOJI ,  FUKUI TATSUO ,  MINOYA YASUSHI ,  TATSUKI KOICHI ,  KUBOTA SHIGEO

IPC: C30B15/00 ,  C30B9/00 ,  C30B29/22 ,  C30B29/32 ,  G02F1/35 ,  G02F1/355

Abstract: PURPOSE:To provide a KTiOPO4 single crystal capable of growing a high-quality single crystal in which a sufficient single domain is formed and a method for producing the single crystal. CONSTITUTION:A KTiOPO4 raw material is melted with a flux to prepare a melt, which is used to produce a single crystal of the KTiOPO4 according to the so-called top seed solution growth(TSSG) method. In the process, the molar fractions of K2O, P2O5 and TiO2 contained in the melt are kept within an area surrounded by 6 points of A, B, C, D, E and F in the ternary constitutional diagram. At this time, K15P13O40 or a substance capable of providing the same composition by melting is used as the flux to provide the ratio of the KTiOPO4 composition accounting for 83.5-90.0mol% of the melt composition. Thereby, more stable crystal growth can be carried out.