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公开(公告)号：JP2014160859A
公开(公告)日：2014-09-04
申请号：JP2014094519
申请日：2014-05-01
Applicant: Sony Corp , ソニー株式会社 , Tohoku Univ , 国立大学法人東北大学
Inventor： KONO SHUNSUKE , YOKOYAMA HIROYUKI , KURAMOTO MASARU , OKI TOMOYUKI
IPC: H01S5/065
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device assembly capable of suppressing the occurrence of a problem that mode synchronous operation becomes unstable, and also capable of obtaining large output.SOLUTION: The semiconductor laser device assembly comprises: (A) mode synchronous semiconductor laser element 10; (B) an external resonator 120; (C) a band-pass filter 121 disposed between the mode synchronous semiconductor laser element 10 and the external resonator 120, and having its film thickness successively changed; and (D) a movement device 122 for moving the band-pass filter 121. Part of a laser beam colliding with the band-pass filter 121 is outputted to the outside, and the remainder of the laser beam colliding with the band-pass filter 121 passes through the band-pass filter 121 to enter the external resonator 121 and is reflected in the external resonator 121, and is returned to the mode synchronous semiconductor laser element 10 passing through the band-pass filter 122.
Abstract translation: 要解决的问题：提供一种半导体激光器件组件，其能够抑制模式同步操作变得不稳定的问题的发生，并且还能够获得大的输出。解决方案：半导体激光器件组件包括：（A）模式同步半导体 激光元件10; （B）外部谐振器120; （C）设置在模式同步半导体激光元件10和外部谐振器120之间，并且其膜厚依次变化的带通滤波器121; 和（D）用于移动带通滤波器121的移动装置122.与带通滤波器121相撞的激光束的一部分被输出到外部，并且剩余的激光束与带通滤波器 121通过带通滤波器121进入外部谐振器121并被反射到外部谐振器121中，并返回到通过带通滤波器122的模式同步半导体激光元件10。
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公开(公告)号：JP2013074002A
公开(公告)日：2013-04-22
申请号：JP2011210355
申请日：2011-09-27
Inventor： KODA RINTARO , WATANABE HIDEKI , KURAMOTO MASARU , KONO SHUNSUKE , MIYAJIMA TAKAO
IPC: H01S5/22
CPC classification number: H01S5/22 , B82Y20/00 , H01S5/0218 , H01S5/0655 , H01S5/2031 , H01S5/34333 , H01S5/50 , H01S2301/166
Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting element having a high output, which can radiate light beams having a single mode.SOLUTION: The light-emitting element comprises: (a) a laminated structure 20 including a first compound semiconductor layer 21 having a first conductivity type, an active layer 23 composed of a compound semiconductor and a second compound semiconductor layer 22 having a second conductivity type, which are sequentially laminated on a base substance 20'; (b) a second electrode 32; and (c) a first electrode 31. The laminated structure 20 has a ridge stripe structure 20A including a part in a thickness direction of at least the second compound semiconductor layer 22. The first compound semiconductor layer 21 has a thickness of more than 0.6 μm. The first compound semiconductor layer 21 includes a high refractive index layer 24 formed therein, composed of a compound semiconductor material having a refractive index higher than a refractive index of a compound semiconductor material composing the first compound semiconductor layer 21.
Abstract translation: 要解决的问题：提供具有高输出的发光元件，其可以辐射具有单一模式的光束。 解决方案：发光元件包括：（a）层压结构20，其包括具有第一导电类型的第一化合物半导体层21，由化合物半导体构成的有源层23和具有第二化合物半导体层22的第二化合物半导体层22 第二导电类型，其依次层压在基础物质20'上; （b）第二电极32; 和（c）第一电极31.层叠结构20具有包括至少第二化合物半导体层22的厚度方向的一部分的脊条结构20A.第一化合物半导体层21的厚度大于0.6μm 。 第一化合物半导体层21包括其中形成的折射率高于构成第一化合物半导体层21的化合物半导体材料的折射率的化合物半导体材料的高折射率层24.权利要求（ C）2013，JPO＆INPIT
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公开(公告)号：JP2012156549A
公开(公告)日：2012-08-16
申请号：JP2012096727
申请日：2012-04-20
Applicant: Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
Inventor： MIYAJIMA TAKAO , KODA RINTARO , WATANABE HIDEKI , OKI TOMOYUKI , KURAMOTO MASARU , YOKOYAMA HIROYUKI
Abstract: PROBLEM TO BE SOLVED: To provide an optical amplifier capable of suppressing change in drive current and optical output with time.SOLUTION: An optical amplifying element 20 on a stem 10 is called a transparent type SOA and amplifies short-wavelength light having entered into an incidence side end face 20A to emit light having larger luminance than the incident light from an injection side end face 20B. Both the incidence side end face 20A and the injection side end face 20B of the optical amplifying element 20 have an anti-reflection film on its surface. The optical amplifying element 20 is sealed by the stem 10 and a cap 30. Light transparent windows 32 are provided on an opposite part of the incidence side end face 20A and the injection side end face 20B, respectively, in the cap 30.
Abstract translation: 要解决的问题：提供一种能够抑制驱动电流和光输出随时间变化的光放大器。 解决方案：杆10上的光放大元件20被称为透明型SOA，并且放大已经进入入射侧端面20A的短波长光，以发射具有比来自注射侧端的入射光更大的亮度的光 面20B。 光放大元件20的入射侧端面20A和注射侧端面20B都在其表面上具有防反射膜。 光学放大元件20由杆10和盖30密封。透光窗32分别设置在盖30中的入射侧端面20A和注射侧端面20B的相对部分上。
版权所有（C）2012，JPO＆INPIT
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4.发明专利Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same 审中-公开双分半导体激光器件，其制造方法及其驱动方法
公开(公告)号：JP2010251712A
公开(公告)日：2010-11-04
申请号：JP2010031299
申请日：2010-02-16
Applicant: Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
Inventor： WATANABE HIDEKI , MIYAJIMA TAKAO , IKEDA MASAO , OKI TOMOYUKI , KURAMOTO MASARU , YOKOYAMA HIROYUKI
IPC: H01S5/0625 , H01S5/026 , H01S5/065 , H01S5/22 , H01S5/343
CPC classification number: H01S5/0625 , B82Y20/00 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/14 , H01S5/22 , H01S5/3216 , H01S5/34333
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser device accurately, surely and easily forming a second electrode and a ridge structure separated by a separating groove. SOLUTION: This method for manufacturing a bi-section GaN-based semiconductor laser device includes respective processes of: (A) forming a first compound semiconductor layer 30, a compound semiconductor layer 40 that constitutes a light-emitting region 41 and a saturable absorption region 42, and a second compound semiconductor layer 50; thereafter (B) forming a strip-shaped second electrode 62 on the second compound semiconductor layer 50; then (C) forming a ridge structure by etching at least a part of the second compound semiconductor layer 50 using the second electrode 62 as an etching mask; and thereafter (D) forming a separating groove 62C in the second electrode 62 by a wet etching method, and thereby separating the second electrode into a first portion 62A and a second portion 62B by the separating groove. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：为了准确地提供半导体激光装置的制造方法，可靠地容易地形成由分离槽分离的第二电极和脊状结构。 解决方案：用于制造双相GaN基半导体激光器件的方法包括以下各处理：（A）形成第一化合物半导体层30，构成发光区域41的化合物半导体层40和 饱和吸收区域42和第二化合物半导体层50; 此后（B）在第二化合物半导体层50上形成带状的第二电极62; 然后（C）通过使用第二电极62作为蚀刻掩模蚀刻第二化合物半导体层50的至少一部分来形成脊结构; 然后（D）通过湿式蚀刻法在第二电极62中形成分离槽62C，从而通过分离槽将第二电极分离成第一部分62A和第二部分62B。 版权所有（C）2011，JPO＆INPIT
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5.发明专利Semiconductor laser, method of manufacturing semiconductor laser, optical disk device, and optical pickup 审中-公开半导体激光器，制造半导体激光器的方法，光盘装置和光学拾取
公开(公告)号：JP2010153429A
公开(公告)日：2010-07-08
申请号：JP2008327172
申请日：2008-12-24
Applicant: Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
Inventor： OTA MAKOTO , YOKOYAMA HIROYUKI , KURAMOTO MASARU , IKEDA MASAO
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser which can perform sufficiently powerful self-pulsation operation without making the shape of a far-field image worse and stably obtain low-noise laser light, and is easy to manufacture. SOLUTION: The semiconductor laser having a ridge stripe 11 in a clad layer is provided with an insulating film 14 for current constriction on both side surfaces of the ridge stripe 11 and extendedly on bottom surfaces on both sides of the ridge stripe 11. The insulating film 14 for current constriction contains a high-refractive-index insulator, having a refractive index higher than an equivalent refractive index of a laser structure at the part of the ridge stripe 11, at a part other than parts nearby both resonator end surfaces. For example, a high-refractive-index insulating film 14a is formed on the bottom surfaces on both the sides of the ridge stripe 11. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：提供一种可以执行足够强大的自脉动操作而不使远场图像的形状更差并且稳定地获得低噪声激光的半导体激光器，并且易于制造。 解决方案：在包覆层中具有脊条11的半导体激光器在脊条11的两个侧表面上设置有用于电流收缩的绝缘膜14，并且在脊条11的两侧的底表面上延伸。 用于电流收缩的绝缘膜14包含折射率高于脊条11的一部分处的激光结构的折射率的折射率的高折射率绝缘体，除了两个谐振器端表面附近的部分之外的部分 。 例如，在脊条11的两侧的底面上形成高折射率绝缘膜14a。（C）2010，JPO＆INPIT
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Patent Agency Ranking6.发明专利Self-induced oscillating semiconductor laser and manufacturing method therefor 审中-公开自激振荡半导体激光器及其制造方法
公开(公告)号：JP2008047692A
公开(公告)日：2008-02-28
申请号：JP2006221793
申请日：2006-08-16
Applicant: Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
Inventor： KITAJIMA NOBUYOSHI , KURAMOTO MASARU , YOKOYAMA HIROYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a self-induced oscillating semiconductor laser which stably APC drives.
SOLUTION: There is provided a semiconductor layer 20, which is formed of an n-type clad layer 21, an active layer 22, a p-type clad layer 23 that includes a stripe shaped embedded ridge portion 28, an n-type buffer layer 24, a p-type contact layer 25, an etching stop layer 26, and a gap layer 27, laminated in this order. In the semiconductor layer 20, an emission side reflection film 33 is formed on a front end face perpendicular to a direction in which the embedded ridge 28 extends, and reflectivity Rf of the front end face is adjusted so as to satisfy P2Abstract translation: 要解决的问题：提供稳定APC驱动的自感应振荡半导体激光器。 解决方案：提供由n型覆盖层21，有源层22，p型覆盖层23形成的半导体层20，该p型覆盖层23包括条形嵌入脊部28， 型缓冲层24，p型接触层25，蚀刻停止层26和间隙层27。 在半导体层20中，在垂直于嵌入脊28延伸的方向的前端面上形成发光侧反射膜33，调节前端面的反射率Rf以满足P2
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公开(公告)号：JP2015035541A
公开(公告)日：2015-02-19
申请号：JP2013166570
申请日：2013-08-09
Inventor： HAMAGUCHI TATSUFUMI , KURAMOTO MASARU , KAZETAGAWA MUNEYUKI
CPC classification number: H01S5/183 , H01S5/0216 , H01S5/0217 , H01S5/0425 , H01S5/18311 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/18388 , H01S5/18391 , H01S5/187 , H01S5/34333 , H01S2304/12
Abstract: 【課題】光の散乱を最小限に抑えることができ、しかも、接触抵抗の上昇を抑制し得る発光素子を提供する。【解決手段】発光素子は、第1面21a及び第2面21bを有する第1化合物半導体層21、活性層23、及び、第2化合物半導体層22が積層されて成る積層構造体20、第1化合物半導体層21の第1面21aに形成された第1電極31、及び、第1化合物半導体層21の第1面21aに形成された多層膜から成る第1光反射層41、並びに、第2化合物半導体層22の上に形成された第2電極32及び多層膜から成る第2光反射層42を備えており、第1化合物半導体層21の第1面21aは、平坦領域21A、及び、平坦領域21Aよりも粗い粗面領域21Bを有しており、第1光反射層41は、少なくとも平坦領域21Aに形成されており、第1電極31は、少なくとも粗面領域21Bに形成されている。【選択図】図1
Abstract translation: 要解决的问题：提供可以使光散射最小化并抑制接触电阻增加的发光元件。解决方案：发光元件包括：层压结构20，其中具有第一表面21a和第二表面21a的第一化合物半导体层21 第二表面21b; 堆叠有源层23和第二化合物半导体层22，形成在第一化合物半导体层21的第一表面21a上的第一电极31; 第一光反射层41，由多层膜构成，形成在第一化合物半导体层21的第一面21a上; 形成在第二化合物半导体层22上的第二电极32; 以及第二光反射层42，其由多层膜构成并形成在第二化合物半导体层22上。第一化合物半导体层21的第一表面21a包括平坦区域21A和比平坦区域粗糙的粗糙表面区域21B 区域21A。 第一光反射层41至少形成在平坦区域21A中，并且第一电极31至少形成在粗糙表面区域21B中。
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8.发明专利Dispersion compensation optical device and semiconductor laser device assembly 审中-公开分散补偿光学器件和半导体激光器件组件
公开(公告)号：JP2014006438A
公开(公告)日：2014-01-16
申请号：JP2012143351
申请日：2012-06-26
Inventor： KONO SHUNSUKE , KURAMOTO MASARU , SAITO KIMIHIRO , KOBAYASHI SEIJI
CPC classification number: G02B5/32 , B82Y20/00 , H01S5/005 , H01S5/0057 , H01S5/0601 , H01S5/06253 , H01S5/0657 , H01S5/14 , H01S5/2009 , H01S5/3216 , H01S5/34333
Abstract: PROBLEM TO BE SOLVED: To provide a dispersion compensation optical device capable of being downsized.SOLUTION: A dispersion compensation optical device 120 is composed of a first transmission type volume hologram diffraction grating 121 and a second transmission type volume hologram diffraction grating 122 which are arranged facing each other. The sum of an incident angle φof laser beam and emission angle φof primary diffraction light is 90 degrees in respective transmission type volume hologram diffraction gratings 121, 122.
Abstract translation: 要解决的问题：提供能够减小尺寸的色散补偿光学装置。解决方案：色散补偿光学装置120由第一透射型体积全息衍射光栅121和第二透射型体积全息衍射光栅122组成， 面对对方 在各透射型体积全息衍射光栅121,122中，一次衍射光的入射角和激光束的发射角与角度之和为90度。
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公开(公告)号：JP2012147020A
公开(公告)日：2012-08-02
申请号：JP2012085189
申请日：2012-04-04
Applicant: Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
Inventor： OKI TOMOYUKI , WATANABE HIDEKI , KODA RINTARO , KURAMOTO MASARU , YOKOYAMA HIROYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a bi-section-type GaN-based semiconductor laser device with a configuration and a structure having a little occurrence of damage in a saturable absorption region.SOLUTION: A semiconductor laser device includes a stack of a second compound semiconductor layer and a third compound semiconductor layer constituting a light-emitting region and a saturable absorption region, and has a stacked structure having a ridge stripe structure, a second electrode, and a first electrode. The second electrode is isolated by an isolation trench into a first portion passing a DC current into the light-emitting region and a second portion for applying electric field to the saturable absorption region. On both sides of the ridge stripe structure, second compound semiconductor layer exposed regions are provided. 1
Abstract translation: 解决的问题：提供具有在可饱和吸收区域中几乎没有损伤的结构和结构的双截面型GaN基半导体激光器件。 解决方案：半导体激光器件包括构成发光区域和可饱和吸收区域的第二化合物半导体层和第三化合物半导体层的堆叠，并且具有脊条结构的层叠结构，第二电极 ，和第一电极。 第二电极通过隔离沟槽隔离成通过DC电流进入发光区域的第一部分和用于向饱和吸收区域施加电场的第二部分。 在脊状条纹结构的两侧设置有第二化合物半导体层露出区域。 1
2 / L 1-ave ，其中L 1-ave < / SB>表示构成发光区域的第三化合物半导体层的一部分与第二化合物半导体层露出区域的顶面的平均距离，L 2 表示在第二电极和隔离沟槽的第二部分之间的边界处从第三化合物半导体层的部分到第二化合物半导体层暴露区域的顶表面的距离。 版权所有（C）2012，JPO＆INPIT -
10.发明专利
公开(公告)号：JP2012015265A
公开(公告)日：2012-01-19
申请号：JP2010149344
申请日：2010-06-30
Applicant: Sony Corp , Tohoku Univ , ソニー株式会社 , 国立大学法人東北大学
Inventor： OKI TOMOYUKI , KODA RINTARO , KURAMOTO MASARU , MIYAJIMA TAKAO , YOKOYAMA HIROYUKI
CPC classification number: H01S5/50 , B82Y20/00 , H01S5/0014 , H01S5/0064 , H01S5/0071 , H01S5/028 , H01S5/0601 , H01S5/0625 , H01S5/0657 , H01S5/1003 , H01S5/1014 , H01S5/141 , H01S5/2009 , H01S5/22 , H01S5/34333 , H01S5/4006
Abstract: PROBLEM TO BE SOLVED: To provide an alignment method of a semiconductor optical amplifier capable of performing optimization of coupling efficiency of incident laser light and an optical waveguide of the semiconductor optical amplifier independently from an external monitoring device.SOLUTION: In an alignment method of a semiconductor optical amplifier 200 in which laser light from a laser light source 100 is optical-amplified and emitted, current of a predetermined value is applied to the semiconductor optical amplifier 200 while the laser light from the laser light source 100 is incident on the semiconductor optical amplifier 200, and the relative position of the semiconductor optical amplifier 200 for the laser light incident on the semiconductor optical amplifier 200 is adjusted so as to maximize the voltage applied to the semiconductor optical amplifier 200.
Abstract translation: 要解决的问题：提供一种能够独立于外部监视装置来实现能够优选入射激光的耦合效率和半导体光放大器的光波导的半导体光放大器的对准方法。 解决方案：在半导体光放大器200的对准方法中，其中来自激光光源100的激光被光放大和发射，预定值的电流被施加到半导体光放大器200，同时来自 激光光源100入射到半导体光放大器200上，并且调整入射在半导体光放大器200上的激光的半导体光放大器200的相对位置，以使施加到半导体光放大器200的电压最大化 （C）2012年，JPO＆INPIT
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