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公开(公告)号：US09006005B2
公开(公告)日：2015-04-14
申请号：US14252604
申请日：2014-04-14
Applicant: Starlite Led Inc
IPC: H01L21/00 , H01L21/50 , H01L21/48 , H01L29/267 , H01L31/12 , H01L33/32 , H01L33/00 , H01L33/12 , H01L33/60 , H01L33/62 , H01L25/16 , H01L33/38 , H01L51/52 , H01L33/08 , H01L33/40
CPC classification number: H01L33/32 , H01L23/3677 , H01L25/167 , H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/382 , H01L33/405 , H01L33/60 , H01L33/62 , H01L51/5237 , H01L51/5253 , H01L2224/48091 , H01L2933/0016 , H01L2933/0058 , H01L2933/0066 , H01L2924/00014
Abstract: A method of fabricating a light emitting diode device comprises depositing conductive material to cover a portion of surface of a conductive and reflective layer to form a first contact pad, and surfaces between adjacent first trenches to form a second contact pad; and depositing a first passivation layer over uncovered portion of surface of the conductive and reflective layer to form a first planar passivation contact surface between the first contact pad and the second trench and depositing bonding material to cover a portion of surface of the first contact pad, a portion of the second contact pad and a portion of the first planar passivation contact to form a first light emitting diode bonding pad on the first contact pad, a second light emitting diode bonding pad on the second contact pad, and a third light emitting diode bonding pad on the first planar passivation contact.
Abstract translation: 制造发光二极管器件的方法包括沉积导电材料以覆盖导电和反射层的表面的一部分以形成第一接触焊盘和相邻第一沟槽之间的表面以形成第二接触焊盘; 以及在所述导电和反射层的表面的未覆盖部分上沉积第一钝化层以在所述第一接触焊盘和所述第二沟槽之间形成第一平面钝化接触表面，并且沉积接合材料以覆盖所述第一接触焊盘的表面的一部分， 所述第二接触焊盘的一部分和所述第一平面钝化接触件的一部分在所述第一接触焊盘上形成第一发光二极管接合焊盘，所述第二接触焊盘上的第二发光二极管接合焊盘和第三发光二极管接合焊盘 接合焊盘在第一平面钝化触点上。
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公开(公告)号：US20140332820A1
公开(公告)日：2014-11-13
申请号：US14252604
申请日：2014-04-14
Applicant: STARLITE LED INC
CPC classification number: H01L33/32 , H01L23/3677 , H01L25/167 , H01L33/0066 , H01L33/0075 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/382 , H01L33/405 , H01L33/60 , H01L33/62 , H01L51/5237 , H01L51/5253 , H01L2224/48091 , H01L2933/0016 , H01L2933/0058 , H01L2933/0066 , H01L2924/00014
Abstract: A method of fabricating a light emitting diode device comprises depositing conductive material to cover a portion of surface of a conductive and reflective layer to form a first contact pad, and surfaces between adjacent first trenches to form a second contact pad; and depositing a first passivation layer over uncovered portion of surface of the conductive and reflective layer to form a first planar passivation contact surface between the first contact pad and the second trench and depositing bonding material to cover a portion of surface of the first contact pad, a portion of the second contact pad and a portion of the first planar passivation contact to form a first light emitting diode bonding pad on the first contact pad, a second light emitting diode bonding pad on the second contact pad, and a third light emitting diode bonding pad on the first planar passivation contact.
Abstract translation: 制造发光二极管器件的方法包括沉积导电材料以覆盖导电和反射层的表面的一部分以形成第一接触焊盘和相邻第一沟槽之间的表面以形成第二接触焊盘; 以及在所述导电和反射层的表面的未覆盖部分上沉积第一钝化层以在所述第一接触焊盘和所述第二沟槽之间形成第一平面钝化接触表面，并且沉积接合材料以覆盖所述第一接触焊盘的表面的一部分， 所述第二接触焊盘的一部分和所述第一平面钝化接触件的一部分在所述第一接触焊盘上形成第一发光二极管接合焊盘，所述第二接触焊盘上的第二发光二极管接合焊盘和第三发光二极管接合焊盘 接合焊盘在第一平面钝化触点上。
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