公开(公告)号：WO2017139008A1

公开(公告)日：2017-08-17

申请号：PCT/US2016/064585

申请日：2016-12-02

Applicant: STRATIO ,  STRATIO, INC.

Inventor： LEE, Jae Hyung ,  KANG, Juhyung ,  KIM, Youngsik ,  NA, Yeul ,  JUNG, Wooshik

IPC: A61B1/06 ,  A61B5/00 ,  A61B5/145 ,  A61B5/1455 ,  G01B9/02 ,  G01J1/16 ,  G01J1/42

CPC classification number: G01J1/42 ,  G01J1/16 ,  G01J1/44 ,  G01J3/0208 ,  G01J3/021 ,  G01J3/14 ,  G01J3/1838 ,  G01J3/2803 ,  G01J3/2823 ,  G01J5/024 ,  G01J5/10 ,  G01J2003/1861 ,  G01J2003/2826 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14689

Abstract: An apparatus for analyzing visible and shortwave infrared light includes an input aperture for receiving light that includes a visible wavelength component and a shortwave infrared wavelength component; a first set of one or more lenses configured to relay light from the input aperture; one or more dispersive optical elements configured to disperse light from the first set of one or more lenses; a second set of one or more lenses configured to focus the dispersed light from the one or more dispersive optical elements; and an array detector configured for converting the light from the second set of one or more lenses to electrical signals that include electrical signals indicating intensity of the visible wavelength component and electrical signals indicating intensity of the shortwave infrared wavelength component.

Abstract translation: 一种用于分析可见光和短波红外光的装置包括：输入孔，用于接收包括可见光波长成分和短波红外波长成分的光; 第一组一个或多个透镜，其被配置为中继来自所述输入孔径的光; 一个或多个色散光学元件，其被配置为分散来自所述第一组一个或多个透镜的光; 第二组一个或多个透镜，其被配置为聚焦来自所述一个或多个色散光学元件的色散光; 以及阵列检测器，被配置用于将来自第二组一个或多个透镜的光转换为包括指示可见波长成分的强度的电信号和指示短波红外波长成分的强度的电信号的电信号。

公开(公告)号：WO2016191371A1

公开(公告)日：2016-12-01

申请号：PCT/US2016/033783

申请日：2016-05-23

Applicant: STRATIO, INC. ,  STRATIO

Inventor： LEE, Jae Hyung ,  NA, Yeul ,  KIM, Youngsik ,  JUNG, Woo-shik

IPC: H01L21/02 ,  H01L21/308

CPC classification number: H01L21/3081 ,  H01L21/02057 ,  H01L21/02082 ,  H01L21/02636 ,  H01L21/30604

Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.

Abstract translation: 一种用于去除在选择性外延生长工艺过程中形成的核的方法包括用一个或多个掩模层在衬底上外延生长第一组一个或多个半导体结构。 在一个或多个掩模层上形成第二组多个半导体结构。 该方法还包括在一个或多个半导体结构的第一组上形成一个或多个保护层。 多个半导体结构的第二组的至少一个子集从一个或多个保护层露出。 该方法还包括：在一个或多个半导体结构的第一组上形成一个或多个保护层之后，至少蚀刻多个半导体结构的第二组的子集。

公开(公告)号：EP3608944A1

公开(公告)日：2020-02-12

申请号：EP19188206.7

申请日：2016-05-23

Applicant: Stratio, Inc.

Inventor： LEE, Jae Hyung ,  NA, Yeul ,  KIM, Youngsik ,  JUNG, Woo-shik

IPC: H01L21/20 ,  H01L21/308

Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.

公开(公告)号：EP3111466A1

公开(公告)日：2017-01-04

申请号：EP16750355.6

申请日：2016-05-23

Applicant: Stratio, Inc. ,  STRATIO

Inventor： LEE, Jae Hyung ,  NA, Yeul ,  KIM, Youngsik ,  JUNG, Woo-Shik

IPC: H01L21/02

CPC classification number: H01L21/3081 ,  H01L21/02057 ,  H01L21/02082 ,  H01L21/02636 ,  H01L21/30604

Abstract: A method for removing nuclei formed during a selective epitaxial growth process includes epitaxially growing a first group of one or more semiconductor structures over a substrate with one or more mask layers. A second group of a plurality of semiconductor structures is formed on the one or more mask layers. The method also includes forming one or more protective layers over the first group of one or more semiconductor structures. At least a subset of the second group of the plurality of semiconductor structures is exposed from the one or more protective layers. The method further includes, subsequent to forming the one or more protective layers over the first group of one or more semiconductor structures, etching at least the subset of the second group of the plurality of semiconductor structures.