公开(公告)号：US20040256222A1

公开(公告)日：2004-12-23

申请号：US10778647

申请日：2004-02-12

Applicant: Surfect Technologies, Inc.

Inventor： Thomas P. Griego ,  Fernando M. Sanchez

IPC: C25D005/02 ,  C25D005/00 ,  C25D017/16

CPC classification number: B23K35/0244 ,  B22F2998/00 ,  B22F2999/00 ,  C25D15/00 ,  C25D15/02 ,  C25D17/001 ,  H01F41/16 ,  H01F41/20 ,  H01F41/26 ,  H01L2224/11334 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/014 ,  B22F1/025 ,  B22F1/0088

Abstract: An apparatus and method for highly controlled electrodeposition, particularly useful for electroplating submicron structures. Enhanced control of the process provides for a more uniform deposit thickness over the entire substrate, and permits reliable plating of submicron features. The apparatus includes a pressurized electrochemical cell to improve plating efficiency and reduce defects, vertical laminar flow of the electrolyte solution to remove surface gases from the vertically arranged substrate, a rotating wafer chuck to eliminate edge plating effects, and a variable aperture to control the current distribution and ensure deposit uniformity across the entire substrate. Also a dynamic profile anode whose shape can be varied to optimize the current distribution to the substrate. The anode is advantageously able to use metallic ion sources and may be placed close to the cathode thus minimizing contamination of the substrate.

Abstract translation: 用于高度控制电沉积的装置和方法，特别适用于电镀亚微米结构。 该过程的增强控制提供了在整个基板上更均匀的沉积厚度，并且允许亚微米特征的可靠电镀。 该装置包括一个加压电化学电池，以提高电镀效率并减少缺陷，电解质溶液的垂直层流从垂直排列的衬底去除表面气体，旋转晶片卡盘以消除边缘电镀效应，以及可变孔径来控制电流 分布并确保整个基板的沉积均匀性。 还可以改变其形状可以改变以优化对衬底的电流分布的动态轮廓阳极。 阳极有利地能够使用金属离子源并且可以靠近阴极放置，从而最小化衬底的污染。