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公开(公告)号:US20240297143A1
公开(公告)日:2024-09-05
申请号:US18654016
申请日:2024-05-03
Inventor: CHIH-YUAN CHIU , SHIH-YEN CHEN , CHI-CHUN PENG , HONG-KUN CHEN , HUI-TING LIN
IPC: H01L23/00 , H01L21/683
CPC classification number: H01L24/74 , H01L21/6838 , H01L24/80 , H01L2224/08145 , H01L2224/80047 , H01L2224/80132 , H01L2224/80201 , H01L2224/80894 , H01L2224/80908
Abstract: A bonding tool and a bonding method are provided. The method includes attaching a semiconductor die to a bonding tool having a first surface, wherein the bonding tool comprises a bending member movably arranged in a trench of the bonding tool, and the bending member protrudes from the first surface and bends the semiconductor die; moving the semiconductor die toward a semiconductor wafer to cause a retraction of the bending member and a partial bonding at a portion of the semiconductor die and the semiconductor wafer; and causing a full bonding between the semiconductor die and the semiconductor wafer subsequent to the partial bonding.
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公开(公告)号:US20230032570A1
公开(公告)日:2023-02-02
申请号:US17672285
申请日:2022-02-15
Inventor: CHIH-YUAN CHIU , SHIH-YEN CHEN , CHI-CHUN PENG , HONG-KUN CHEN , HUI-TING LIN
IPC: H01L23/00
Abstract: A bonding tool and a bonding method are provided. The method includes attaching a semiconductor die to a bonding tool having a first surface, wherein the bonding tool comprises a bending member movably arranged in a trench of the bonding tool, and the bending member protrudes from the first surface and bends the semiconductor die; moving the semiconductor die toward a semiconductor wafer to cause a retraction of the bending member and a partial bonding at a portion of the semiconductor die and the semiconductor wafer; and causing a full bonding between the semiconductor die and the semiconductor wafer subsequent to the partial bonding.
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公开(公告)号:US20190318987A1
公开(公告)日:2019-10-17
申请号:US15952713
申请日:2018-04-13
Inventor: CHIH-HAO LIN , CHIEN-KUO CHANG , TZU-KAI LAN , HUI-TING LIN , CHUN-MIN LIN
IPC: H01L23/498 , H01L23/31 , H01L23/00
Abstract: A semiconductor package structure includes a first package including a bonding region and a periphery region surrounding the bonding region, at least one insulating structure disposed in the bonding region of the first package, a second package disposed over the first package and the insulating structure in the bonding region, and a plurality of connectors disposed between the first package and the second package. The plurality of connectors provide electrical connection between the first package and the second package. Further, the insulating structure penetrates the first package and is spaced apart from the plurality of connectors.
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