公开(公告)号：WO2017118728A1

公开(公告)日：2017-07-13

申请号：PCT/EP2017/050262

申请日：2017-01-06

Applicant: TECHNISCHE UNIVERSITEIT EINDHOVEN

Inventor： FIORE, Andrea ,  VAN DER HEIJDEN, Robertus Willebrordus ,  MIDOLO, Leonardo ,  ZOBENICA, Zarco ,  LIU, Tianran

IPC: G01J3/02 ,  G01J3/26 ,  G01J3/12

CPC classification number: G01J3/0256 ,  G01J3/0205 ,  G01J3/0237 ,  G01J3/26 ,  G01J2003/1213

Abstract: A double membrane microspectrometer is provided that includes a first membrane having a first and second doped semiconductor layers, and a first intrinsic layer is disposed between the first and second layers, where the first intrinsic layer includes an optically absorbing material, a first pattern of through holes are disposed perpendicular through the first membrane having lateral support arms, a second membrane having a third doped layer and a fourth layer is an intrinsic layer or a doped layer, where the second membrane includes a second pattern of through holes, where the first membrane is separated from the second membrane by an insulating bridge layer and is supported above the second membrane by lateral support arms, where an absorption spectrum of the absorbing material is dependent on the separation distance of the membranes, electrodes are disposed on the first layer, the second layer, and the third layer operate the separation.

Abstract translation: 提供了双膜微分光计，其包括具有第一掺杂半导体层和第二掺杂半导体层的第一膜，并且第一本征层设置在第一层和第二层之间，其中第一本征层包括光学 第一图案的通孔垂直穿过具有横向支撑臂的第一膜设置，第二膜具有第三掺杂层，并且第四层是本征层或掺杂层，其中第二膜包括第二图案 其中第一膜通过绝缘桥接层与第二膜分离并且通过横向支撑臂支撑在第二膜上方，其中吸收材料的吸收光谱取决于膜的分离距离，电极 设置在第一层上，第二层和第三层进行分离。

公开(公告)号：EP3400427A1

公开(公告)日：2018-11-14

申请号：EP17700161.7

申请日：2017-01-06

Applicant: Technische Universiteit Eindhoven

Inventor： FIORE, Andrea ,  VAN DER HEIJDEN, Robertus Willebrordus ,  MIDOLO, Leonardo ,  ZOBENICA, Zarco ,  LIU, Tianran

IPC: G01J3/02 ,  G01J3/26 ,  G01J3/12

CPC classification number: G01J3/0256 ,  G01J3/0205 ,  G01J3/0237 ,  G01J3/26 ,  G01J2003/1213

Abstract: A double membrane microspectrometer is provided that includes a first membrane having a first and second doped semiconductor layers, and a first intrinsic layer is disposed between the first and second layers, where the first intrinsic layer includes an optically absorbing material, a first pattern of through holes are disposed perpendicular through the first membrane having lateral support arms, a second membrane having a third doped layer and a fourth layer is an intrinsic layer or a doped layer, where the second membrane includes a second pattern of through holes, where the first membrane is separated from the second membrane by an insulating bridge layer and is supported above the second membrane by lateral support arms, where an absorption spectrum of the absorbing material is dependent on the separation distance of the membranes, electrodes are disposed on the first layer, the second layer, and the third layer operate the separation.