公开(公告)号：US20250048721A1

公开(公告)日：2025-02-06

申请号：US18228385

申请日：2023-07-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Eung Jung Kim ,  Thomas Grebs ,  Sunglyong Kim ,  Sungho Beck ,  Wei Fu ,  Xiaochun Zhao ,  Arjun Pankaj

IPC: H01L29/78 ,  H01L27/06 ,  H01L27/092 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/786

Abstract: Described examples include an integrated circuit having first and second transistors. The first transistor includes a plurality of trenches extending into a semiconductor substrate and a plurality of source regions, each source region located between a pair of adjacent trenches. A first source terminal is connected to the plurality of source regions. The second transistor includes a central source region between a pair of the trenches and a second source terminal connected to the central source region. The second source terminal is conductively isolated from the first source terminal.

公开(公告)号：US20230087151A1

公开(公告)日：2023-03-23

申请号：US17502692

申请日：2021-10-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Thomas Grebs ,  Meng-Chia Lee ,  Hong Yang ,  Ya ping Chen ,  Sunglyong Kim

IPC: H01L29/40 ,  H01L29/78 ,  H01L29/66

Abstract: A trench gate metal oxide semiconductor (MOSFET) device includes a substrate with a semiconductor surface layer doped a first conductivity type. At least one trench gate MOSFET cell is located in or over the semiconductor surface layer, and includes a body region in the semiconductor surface layer doped a second conductivity type, and a source region on top of the body region doped the first conductivity type. A trench extends down from a top side of the semiconductor surface layer, the trench abutting the body region and being lined with a dielectric material. A field plate that includes polysilicon is located in the trench, and a gate electrode is located over the field plate. The field plate has a bottom portion, a middle portion, and a top portion, wherein the bottom portion is narrower than the middle portion, and the middle portion is narrower than the top portion.

公开(公告)号：US20240113217A1

公开(公告)日：2024-04-04

申请号：US17958205

申请日：2022-09-30

Applicant: Texas Instruments Incorporated

Inventor： Hong Yang ,  Thomas Grebs ,  Yunlong Liu ,  Sunglyong Kim ,  Lindong Li ,  Peng Li ,  Seetharaman Sridhar ,  Yeguang Zhang ,  Sheng pin Yang

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/423

CPC classification number: H01L29/7813 ,  H01L21/823437 ,  H01L27/092 ,  H01L29/42368

Abstract: An integrated circuit includes first and second trenches in a semiconductor substrate and a semiconductor mesa between the first and second trenches. A source region having a first conductivity type and a body region having an opposite second conductivity type are located within the semiconductor mesa. A trench shield is located within the first trench, and a gate electrode is over the trench shield between first and second sidewalls of the first trench. A gate dielectric is on a sidewall of the first trench between the gate electrode and the body region, and a pre-metal dielectric (PMD) layer is over the gate electrode. A gate contact through the PMD layer touches the gate electrode between the first and second sidewalls, and a trench shield contact through the PMD layer touches the trench shield between the first and second sidewalls.