公开(公告)号：EP0379298A2

公开(公告)日：1990-07-25

申请号：EP90300259.0

申请日：1990-01-10

Applicant: THE GENERAL ELECTRIC COMPANY, p.l.c.

Inventor： Jacobson, Susan Elizabeth ,  Lee, Rosemary Ann ,  Williams, Helen Anne

IPC: H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J1/3042

Abstract: In the production of micron-size pyramid emitters for field emission devices, very sharp emitter points are achieved by providing a layer (2) of suitable metal, metal compound or semiconductor, forming masking pads (5) over the required emitter positions, etching the layer so that column-like structures (6) are formed beneath the pads, removing the pads, and then subjecting the columns to dry etching, such as plasma etching, reactive ion etching, ion beam milling or reactive ion beam milling. The dry etching process shapes the columns into pyramids with a tip size of the order of 0.03 microns.

Abstract translation: 在用于场发射器件的微米级金字塔发射体的生产中，通过提供合适的金属，金属化合物或半导体的层（2），在所需的发射极位置上形成掩模焊盘（5）来实现非常尖锐的发射极点，蚀刻 使得在焊盘下方形成柱状结构（6），去除焊盘，然后对色谱柱进行干蚀刻，例如等离子体蚀刻，反应离子蚀刻，离子束研磨或反应离子束研磨。 干蚀刻工艺将柱形成具有尖端尺寸为0.03微米级的金字塔。

公开(公告)号：EP0379298B1

公开(公告)日：1995-08-09

申请号：EP90300259.0

申请日：1990-01-10

Applicant: THE GENERAL ELECTRIC COMPANY, p.l.c.

Inventor： Jacobson, Susan Elizabeth ,  Lee, Rosemary Ann ,  Williams, Helen Anne

IPC: H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J1/3042

公开(公告)号：EP0379298A3

公开(公告)日：1991-02-06

申请号：EP90300259.0

申请日：1990-01-10

Applicant: THE GENERAL ELECTRIC COMPANY, p.l.c.

Inventor： Jacobson, Susan Elizabeth ,  Lee, Rosemary Ann ,  Williams, Helen Anne

IPC: H01J9/02 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J1/3042

Abstract: In the production of micron-size pyramid emitters for field emission devices, very sharp emitter points are achieved by providing a layer (2) of suitable metal, metal compound or semiconductor, forming masking pads (5) over the required emitter positions, etching the layer so that column-like structures (6) are formed beneath the pads, removing the pads, and then subjecting the columns to dry etching, such as plasma etching, reactive ion etching, ion beam milling or reactive ion beam milling. The dry etching process shapes the columns into pyramids with a tip size of the order of 0.03 microns.