公开(公告)号：EP0306173A1

公开(公告)日：1989-03-08

申请号：EP88307552.5

申请日：1988-08-15

Applicant: THE GENERAL ELECTRIC COMPANY, p.l.c.

Inventor： Lee, Rosemary Ann ,  Samarakone, Nandasiri ,  Cade, Neil Alexander

IPC: H01J1/30 ,  H01J37/073 ,  H01J9/02 ,  H01J17/38

CPC classification number: H01J21/105 ,  H01J1/3042 ,  H01J9/025

Abstract: In a method of forming a field-induced emission device, a cathode (3) is provided on a substrate (4), for example by etching away the substrate to leave a pointed projection. The projection may be covered with a metallic layer (5) to enhance the field-induced cathode emission. A first insulating layer (7) is formed over the substrate, with an aperture therein corresponding to the cathode position. An apertured control grid layer (9) is formed over the first insulating layer and an apertured second insulating layer (15) is formed thereon. A tunnel (18) formed by the apertures in the insulating and conductive layers is filled with a plug (19) of soluble material. An anode strip (21) is formed on the second insulating layer (15) and over the plug, and the plug is then dissolved through gaps at the edges of the anode strip, thereby leaving an unsupported area of anode strip over the cathode. The tunnel (18) may then be evacuated or may be filled with gas and the gaps at the edges of the anode strip will then be sealed to retain the vacuum or gas. If a diode structure is required, the control grid layer and the second insulating layer will be omitted. A switching device may be constructed by associating a number of the cathodes on the substrate with a common control grid and a common anode. The anode, grid and cathode structures may be so dimensioned as to form a transmission line.

Abstract translation: 在形成场致发射器件的方法中，阴极（3）例如通过蚀刻掉衬底留下尖锐的突起而设置在衬底（4）上。 突起可以用金属层（5）覆盖，以增强场致发射的阴极发射。 第一绝缘层（7）形成在衬底上，其中孔对应于阴极位置。 在第一绝缘层之上形成有孔控制栅格层（9），并且在其上形成有孔的第二绝缘层（15）。 由绝缘和导电层中的孔形成的隧道（18）填充有可溶性材料的塞子（19）。 阳极条（21）形成在第二绝缘层（15）上并在插塞上方，然后插塞通过阳极条边缘处的间隙溶解，由此在阴极上留下阳极条的未支撑区域。 隧道（18）然后可以抽真空或可以填充气体，然后密封阳极条的边缘处的间隙以保持真空或气体。 如果需要二极管结构，则省略控制栅格层和第二绝缘层。 可以通过将衬底上的多个阴极与公共控制栅格和公共阳极相关联来构造开关器件。 阳极，栅极和阴极结构的尺寸可以形成传输线。

公开(公告)号：EP0306173B1

公开(公告)日：1993-04-28

申请号：EP88307552.5

申请日：1988-08-15

Applicant: THE GENERAL ELECTRIC COMPANY, p.l.c.

Inventor： Lee, Rosemary Ann ,  Samarakone, Nandasiri ,  Cade, Neil Alexander

IPC: H01J1/30 ,  H01J37/073 ,  H01J9/02 ,  H01J17/38

CPC classification number: H01J21/105 ,  H01J1/3042 ,  H01J9/025