公开(公告)号：US20140054658A1

公开(公告)日：2014-02-27

申请号：US13812499

申请日：2012-10-12

Applicant: THE INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xiaolong Ma ,  Huaxiang Yin ,  Zuozhen Fu

IPC: H01L29/66 ,  H01L29/161 ,  H01L29/78

CPC classification number: H01L29/66477 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02452 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/02675 ,  H01L21/26506 ,  H01L21/268 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/66651 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7848

Abstract: The present invention discloses a semiconductor device, comprising: a substrate, a gate stack structure on the substrate, source and drain regions in the substrate on both sides of the gate stack structure, and a channel region between the source and drain regions in the substrate, characterized in that at least one of the source and drain regions comprises a GeSn alloy. In accordance with the semiconductor device and method for manufacturing the same of the present invention, GeSn stressed source and drain regions with high concentration of Sn is formed by implanting precursors and performing a laser rapid annealing, thus the device carrier mobility of the channel region is effectively enhanced and the device drive capability is further improved.

Abstract translation: 本发明公开了一种半导体器件，包括：衬底，衬底上的栅极堆叠结构，栅极堆叠结构两侧的衬底中的源极和漏极区域以及衬底中的源极和漏极区域之间的沟道区域 其特征在于源区和漏区中的至少一个包括GeSn合金。 根据本发明的半导体器件及其制造方法，通过注入前体并进行激光快速退火形成GeSn应力的高浓度Sn的源区和漏极区，因此沟道区的器件载流子迁移率为 有效提高了设备​​驱动能力。