公开(公告)号：AT482466T

公开(公告)日：2010-10-15

申请号：AT05814171

申请日：2005-12-06

Applicant: TOPPAN PRINTING CO LTD

Inventor： KANAYAMA KOICHIRO ,  MATSUO TADASHI ,  NISHIYAMA YASUSHI

IPC: H01L21/027 ,  G03F1/00 ,  G03F7/20

Abstract: The invention is intended to enhance the precision of pattern inspection of a reflection type photomask used in EUV lithography by observing reflectivity contrast of DUV light. In a reflection type photomask blank having a multilayer reflection film (2) and a light absorption laminated layer (4) laminated on a substrate (1), the light absorption laminated layer (4) is composed by laminating a second light absorption layer (42) having DUV light absorbing capacity and containing at least one of nitrogen and oxygen, and tantalum and silicon, on a first light absorption layer (41) having EUV light absorbing capacity and containing tantalum and silicon.

公开(公告)号：DE602005023779D1

公开(公告)日：2010-11-04

申请号：DE602005023779

申请日：2005-12-06

Applicant: TOPPAN PRINTING CO LTD

Inventor： KANAYAMA KOICHIRO ,  MATSUO TADASHI ,  NISHIYAMA YASUSHI

IPC: H01L21/027 ,  G03F1/00 ,  G03F7/20

公开(公告)号：EP2416347A4

公开(公告)日：2014-04-02

申请号：EP10758474

申请日：2010-03-23

Applicant: TOPPAN PRINTING CO LTD

Inventor： MATSUO TADASHI

IPC: H01L21/027 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/58

CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/58

Abstract: Provided is a reflective photomask reflecting an EUV light and used to irradiate a reflected light to a transfer sample, the reflective photomask including: a substrate; a high reflection part formed on the substrate; and a low reflection part formed on the high reflection part and being patterned, wherein the low reflection part, being patterned, includes at least one or more layers being stacked; and at least one layer of the low reflection part, being patterned, includes a layer including an Sn and an oxygen.

公开(公告)号：EP2015139A4

公开(公告)日：2009-04-22

申请号：EP06834123

申请日：2006-12-06

Applicant: TOPPAN PRINTING CO LTD

Inventor： MATSUO TADASHI ,  KANAYAMA KOICHIRO ,  TAMURA SHINPEI

IPC: G03F1/22 ,  G03F1/24 ,  H01L21/027

CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G21K1/062

Abstract: Reflective photomask blank (10) comprising substratum (1); multilayer reflective film (2) capable of exposure light reflection superimposed on the substratum (1); protective film (3) for protecting the multilayer reflective film (2), superimposed on the multilayer reflective film (2); absorber layer (5) for absorbing of exposure light on the protective film (3); and buffer film (4) interposed between the absorber layer (5) and the protective film (3) and being resistant to etching conducted at the time of exposure transfer pattern formation on the absorber layer (5), wherein the protective film (3) consists of a compound containing Zr and Si, or a compound containing Zr and Si and at least either O or N, or an elemental substance or compound containing at least any one of Ru, C and Y.

公开(公告)号：EP1833080A4

公开(公告)日：2009-03-18

申请号：EP05814171

申请日：2005-12-06

Applicant: TOPPAN PRINTING CO LTD

Inventor： KANAYAMA KOICHIRO ,  MATSUO TADASHI ,  NISHIYAMA YASUSHI

IPC: H01L21/027 ,  G03F1/00 ,  G03F7/20

CPC classification number: G03F1/22 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/78 ,  G03F1/84 ,  Y10T428/31616

Abstract: It is aimed to improve the accuracy of testing when a pattern of a reflective photomask used for EUV lithography is examined by observing the reflectance contrast of a DUV light. Specifically disclosed is a reflective photomask blank wherein a multilayer reflective film (2) and a light absorptive laminate (4) are arranged on a substrate (1). The light absorptive laminate (4) is composed of a first light absorptive layer (41) with EUV light absorbing ability which contains tantalum and silicon, and a second light absorptive layer (42) with DUV light absorbing ability which is arranged on the first absorptive layer (41) and contains tantalum, silicon and at least one of nitrogen and oxygen.

公开(公告)号：JP2014075484A

公开(公告)日：2014-04-24

申请号：JP2012222243

申请日：2012-10-04

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： MATSUO TADASHI

IPC: H01L21/027 ,  G03F1/24

Abstract: PROBLEM TO BE SOLVED: To facilitate position design of an absorption film pattern while taking account of the displacement thereof incident to formation of a light-shielding frame.SOLUTION: A reflective mask includes a substrate 2, a multilayer reflective film 3 formed on the surface of the substrate 2, and an absorption film 4 formed on the multilayer reflective film 3. In at least a part on the outside of a circuit pattern region formed on the absorption film 4, a light-shielding frame 5 having a reflectance of EUV light lower than that of the multilayer reflective film 3 is formed by removing the absorption film 4, and the multilayer reflective film 3. The wall surface of the multilayer reflective film 3 becoming the sidewall of the light-shielding frame 5 has a taper-shaped tapered portion 10.

Abstract translation: 要解决的问题：为了便于吸收膜图案的位置设计，同时考虑到入射到遮光框架的形成的位移。解决方案：反射掩模包括基板2，形成在表面上的多层反射膜3 以及形成在多层反射膜3上的吸收膜4.在形成在吸收膜4上的电路图案区域的至少一部分上，具有EUV光反射率的遮光框5 通过除去吸收膜4和多层反射膜3来形成低于多层反射膜3的壁。作为遮光框5的侧壁的多层反射膜3的壁面呈锥形的锥形 第10部分。

公开(公告)号：JP2012190964A

公开(公告)日：2012-10-04

申请号：JP2011052595

申请日：2011-03-10

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： MATSUO TADASHI

IPC: H01L21/027 ,  G03F1/22

Abstract: PROBLEM TO BE SOLVED: To provide a phase defect correction method of reflection type mask which allows for accurate phase defect correction of a reflection type mask without causing any damage thereon.SOLUTION: In the phase defect correction method of reflection type mask, phase difference between a phase defect part and a high reflection part is practically brought to 0 (zero) by laminating a multilayer film composed of two kinds of material on the phase defect part, and the reflectance of the phase defect part is substantially equalized to the reflectance of the high reflection part. Phase defect can be corrected by laminating a multilayer film for correction, even for a protrusion defect directly above a substrate and a protrusion defect in the center of the multilayer film.

Abstract translation: 要解决的问题：提供一种反射型掩模的相位缺陷校正方法，其允许反射型掩模的精确相位缺陷校正，而不对其造成任何损害。 解决方案：在反射型掩模的相位缺陷校正方法中，相位缺陷部分和高反射部分之间的相位差实际上通过在相位上层叠由两种材料组成的多层膜而变为0（零） 缺陷部分，相位缺陷部分的反射率基本上与高反射部分的反射率相等。 可以通过层叠用于校正的多层膜，即使在基板正上方的突起缺陷和多层膜的中心的突起缺陷来校正相位缺陷。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2009218554A

公开(公告)日：2009-09-24

申请号：JP2008254244

申请日：2008-09-30

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： NEGISHI YOSHIYUKI ,  SUZUKI MANABU ,  SOMA MUNEHISA ,  MATSUO TADASHI

IPC: H01L21/027 ,  B29C59/16 ,  B29K101/10

Abstract: PROBLEM TO BE SOLVED: To provide an imprint method in which high-throughput and stable imprint can be performed and a fineness pattern can be obtained. SOLUTION: The imprint method uses an infrared ray light-hardened resin and uses an infrared ray as an exposure light. According to a configuration, using the infrared ray for exposure allows a pattern to be transferred without applying a heating/cooling cycle to a transfer base and an imprint mould. Further, because the need of the heating/cooling cycle is eliminated, the thermal expansion of the transfer base and the imprint mould can be suppressed and the positioning precision of pattern transfer can be improved. Further, because the need of the heating/cooling cycle is eliminated, time required for transfer process can be reduced and the throughput can be improved. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供可以执行高通量和稳定的压印并且可以获得细度图案的压印方法。 解决方案：压印方法使用红外线光硬化树脂，并使用红外线作为曝光光。 根据这样的结构，通过使用红外线进行曝光，能够将图案转印到转印基板和压印模具上而不进行加热/冷却循环。 此外，由于消除了加热/冷却循环的需要，可以抑制转印基体和压印模具的热膨胀，并且可以提高图案转印的定位精度。 此外，由于消除了加热/冷却循环的需要，可以减少转印处理所需的时间，并且可以提高生产量。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009098611A

公开(公告)日：2009-05-07

申请号：JP2008127919

申请日：2008-05-15

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： MATSUO TADASHI

IPC: G03F1/22 ,  G03F1/24 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a halftone EUV (extreme ultraviolet) mask, in which a halftone membrane material is selected so as to reduce a shadowing effect while ensuring wide selectivity (flexibility) of reflectance and high detergent resistance, a halftone EUV mask blank, a manufacturing method of halftone EUV mask, and a pattern transfer method.
SOLUTION: The halftone EUV mask is provided with a substrate, a high reflection part formed on the substrate, and a low reflection part formed by patterning on the high reflection part. The low reflection part includes Ta (tantalum), Mo (molybdenum) and Si (silicon).
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供半色调EUV（极紫外线）掩模，其中选择半色调膜材料以减少遮蔽效应，同时确保反射率的高选择性（柔性）和高耐洗涤性，半色调 EUV掩模空白，半色调EUV掩模的制造方法和图案转印方法。 解决方案：半色调EUV掩模设置有基板，形成在基板上的高反射部分和通过在高反射部分上图案化而形成的低反射部分。 低反射部分包括Ta（钽），Mo（钼）和Si（硅）。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2009071126A

公开(公告)日：2009-04-02

申请号：JP2007239309

申请日：2007-09-14

Applicant: Toppan Printing Co Ltd ,  凸版印刷株式会社

Inventor： TAMURA SHINPEI ,  SAKATA AKIRA ,  MATSUO TADASHI

IPC: H01L21/027 ,  G03F1/22 ,  G03F1/24

Abstract: PROBLEM TO BE SOLVED: To provide a reflective photomask that eliminates the need to use an expensive rare material by using a Ti oxide, a Zr alloy, a Zr oxide, or a Zr nitride as a material for a surface coating film while reducing effects caused by changes in material properties by oxidization, and a semiconductor device manufacturing method.
SOLUTION: The reflective photomask has a substrate, a multilayer reflection film formed on the substrate, a protective film formed on the multilayer reflection film, a buffering film formed on the protective film, an absorbing film formed on the buffering film while having a multilayer structure, and a coating film that covers the whole face, on which an exposure transfer pattern obtained by patterning the buffering film and the absorbing film exists, and at least the side faces of the protective film and the multilayer reflection film.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种反射光掩模，其不需要通过使用Ti氧化物，Zr合金，Zr氧化物或Zr氮化物作为表面涂膜的材料来使用昂贵的稀有材料，同时 通过氧化对材料特性的变化引起的减少效果，以及半导体装置的制造方法。 解决方案：反射光掩模具有基板，形成在基板上的多层反射膜，形成在多层反射膜上的保护膜，形成在保护膜上的缓冲膜，形成在缓冲膜上的吸收膜，同时具有 多层结构和覆盖整个面的涂膜，其上存在通过图案化缓冲膜和吸收膜获得的曝光转印图案，以及至少保护膜和多层反射膜的侧面。 版权所有（C）2009，JPO＆INPIT