公开(公告)号：JP2000251336A

公开(公告)日：2000-09-14

申请号：JP4800099

申请日：1999-02-25

Applicant: TORAY INDUSTRIES

Inventor： ARAI TAKESHI ,  NONAKA TOSHINAKA ,  NAGINO KUNIHISA

IPC: G11B7/26

Abstract: PROBLEM TO BE SOLVED: To obtain an optical recording medium having long-term shelf stability because peeling between a contact layer and a recording layer is not caused in the case of a structure including the contact layer between a 1st protective layer and the recording layer. SOLUTION: When at least a contact layer which comes in contact with a recording layer and the recording layer are successively formed on a substrate by sputtering in a film formation chamber to produce an optical recording medium, after the formation of the contact layer, that is, before the formation of the recording layer, the partial pressure of oxygen, nitrogen, air or a gaseous mixture of these in the film formation chamber is regulated to >=0.1 kPa.

公开(公告)号：JP2000030314A

公开(公告)日：2000-01-28

申请号：JP19565798

申请日：1998-07-10

Applicant: TORAY INDUSTRIES

Inventor： NONAKA TOSHINAKA ,  NAKAKUKI HIDEO

IPC: C04B35/48 ,  C23C14/34 ,  G11B7/254 ,  G11B7/257 ,  G11B7/26 ,  G11B7/24

Abstract: PROBLEM TO BE SOLVED: To form a thin film at an increased rate and to reduce the cost by specifying the volume content of a monoclinic phase in a zirconium oxide-base sputtering target. SOLUTION: An aq. soln. of chlorides, sulfide, nitrates or oxychlorides of zirconium and a group IIa element of the Periodic Table other than Be or a group IIIa element or a soln. of alkoxides, other salts or complexes is mixed and a uniformly mixed powder is obtd. by evaporating the solvent or carrying out thermal decomposition. In other way, powders of oxides, carbonates or other salts of zirconium and a group IIa element of the Periodic Table other than Be or a group IIIa element are uniformly mixed with a ball mill or the like. The resultant uniformly mixed powder is filled into a metallic mold and uniaxially pressurized or it is filled into a rubber bag and subjected to isostatic pressing to form a compact and this compact is heat-treated to obtain the objective sputtering target contg.

公开(公告)号：JP2000030309A

公开(公告)日：2000-01-28

申请号：JP19565498

申请日：1998-07-10

Applicant: TORAY INDUSTRIES

Inventor： NAKAKUKI HIDEO ,  NONAKA TOSHINAKA

IPC: C04B35/581 ,  C23C14/34 ,  G11B7/26

Abstract: PROBLEM TO BE SOLVED: To make formable a thin film at an increased rate and to reduce the cost by specifying the relative density of an aluminum nitride-base sputtering target. SOLUTION: A calcium compd. such as CaO or Ca3N2 or an yttrium compd. such as Y2O3, YC2 or YN is added as a sintering aid to aluminum nitride powder synthesized by the reduction nitriding reaction of Al2O3 and preferably having =99% relative density and usually having 3-20 mm thickness. The sintering aid is added so as to promote the sintering of the powder less liable to sinter and the added component improves the wettability of the particles with each other by melting at a high temp. and promotes mass transfer to increase the relative density of the resultant sintered body.

公开(公告)号：JP2000026958A

公开(公告)日：2000-01-25

申请号：JP19565598

申请日：1998-07-10

Applicant: TORAY INDUSTRIES

Inventor： NAKAKUKI HIDEO ,  NONAKA TOSHINAKA

IPC: C04B35/565 ,  C23C14/34 ,  G11B7/24 ,  G11B7/254 ,  G11B7/257 ,  G11B7/26

Abstract: PROBLEM TO BE SOLVED: To form a thin silicon carbide film at a high rate by using a silicon carbide-base sputtering target having a specified relative density or above. SOLUTION: The silicon carbide-base sputtering target has >=98%, preferably >=99% relative density and contains at least one selected from boron, carbon, alumina and a rare earth metal. The primary grain diameter of the silicon carbide is =1,900 deg.C by pressureless sintering, hot pressing, HIP or other method to obtain a dense sintered compact as the sputtering target. The thin silicon carbide film is formed at a high rate and the optical recording medium is produced at a low cost.

公开(公告)号：JPH10154353A

公开(公告)日：1998-06-09

申请号：JP31054996

申请日：1996-11-21

Applicant: TORAY INDUSTRIES

Inventor： AMIOKA TAKAO ,  NONAKA TOSHINAKA ,  OBAYASHI GENTARO

IPC: G11B7/258 ,  G11B7/24 ,  G11B7/26

Abstract: PROBLEM TO BE SOLVED: To prevent the deterioration of an Al-contg. reflecting layer and to obtain an optical recording medium excellent in presearvability over a long period of time and in resistance to repetitive recording by incorporating a specified amt. of oxygen atoms into the reflecting layer. SOLUTION: A 1st dielectric layer, a recording layer, a 2nd dielectric layer and a reflecting layer are successively laminated on a substrate. The reflecting layer is an Al-contg. reflecting layer contg. 0.001-0.05at.% oxygen atoms. Since the oxygen is contained, further oxidation is prevented and the deterioration of the reflecting layer and that of the resultant optical recording medium can be prevented. The Al-contg. reflecting layer is formed using Al having light reflecting property, an Al-base alloy contg. additive elements such as Ti, Cr and Hf or a mixture of Al with metallic compds. such as nitrides, oxides or chalcogenides of Al and Si. Metal Al and its alloy have high light reflecting property and ensure high heat conductivity.

公开(公告)号：JPH07297129A

公开(公告)日：1995-11-10

申请号：JP6951394

申请日：1994-04-07

Applicant: TORAY INDUSTRIES

Inventor： AKAMATSU TAKAYOSHI ,  NONAKA TOSHINAKA ,  NONAKA HARUKI

IPC: C01B31/36 ,  C01B33/00 ,  H01L21/205

Abstract: PURPOSE:To prevent increase of resistance, roughening of surface, and lowering of transmittance due to damage caused by extraction of oxygen atom by subjecting a gas containing hydrogenated silicon gas to plasma decomposition using ultrashort waves of specific frequency thereby depositing a silicon based semiconductor film having a specific bright conductivity on a substrate having a specific melting point. CONSTITUTION:A gas containing hydrogenated silicon gas is subjected to plasma decomposition using unltrashort waves having frequency of 30-300MHz thus depositing a silicon based semiconductor film on a substrate. When a silicon carbide film is deposited, a mixture gas of hydrogenated silicon gas and hydrocarbon gas is used. Consequently, the bright conductivity can be set at 5X10 S/cm or above even on a substrate having melting point of 240 deg. or below when it is undoped. A film having a wide optical band gap can be deposited on a doped substrate.

公开(公告)号：JPH07262613A

公开(公告)日：1995-10-13

申请号：JP5599094

申请日：1994-03-25

Applicant: TORAY INDUSTRIES

Inventor： NONAKA TOSHINAKA ,  HIROTA KUSATO ,  OBAYASHI GENTARO

IPC: G11B7/241 ,  G11B7/24

Abstract: PURPOSE:To enable recording and erasing with low power and to obtain stable operation by forming a laminated body comprising at least a transparent substrate, first dielectric layer, recording layer, second dielectric layer, and reflecting layer as the constitutional member of the optical recording medium and forming the second dielectric layer to have thickness between >30nm and Pa ZnS with addition of 20mol% SiO2 is sputtered in 2X10 Pa Ar gas atmosphere to form the first dielectric layer having 160nm thickness and 2.1 refractive index on the substrate. Further, an alloy target comprising Pd, Nb, Ge, Sb, Te is sputtered to form the recording layer of 25nm thickness. Then the second dielectric layer comprising the same material as the first dielectric layer is formed to 35nm thickness, and the reflecting layer of 80nm thickness is formed. Further, a UV-curing resin is applied by spin coating and cured.

公开(公告)号：JPH07262607A

公开(公告)日：1995-10-13

申请号：JP5598994

申请日：1994-03-25

Applicant: TORAY INDUSTRIES

Inventor： NONAKA TOSHINAKA ,  HIROTA KUSATO ,  OBAYASHI GENTARO

IPC: G11B7/24

Abstract: PURPOSE:To obtain an optical recording medium having an increased rate of erasure and improved jitter characteristics and ensuring stable action even after recording and erasure repeated many times by specifying the compsn. of the recording layer of an optical recording medium. CONSTITUTION:A recording layer, a dielectric layer and a reflecting layer are formed by high-frequency magnetron sputtering on a spirally grooved polycarbonate substrate having 1.2mm thickness, 13cm diameter and 1.6mum pitch in a vacuum vessel while rotating the substrate at 30r.p.m. At this time, a high refractive index layer having 49nm thickness is formed first by sputtering a Ge target and a 1st dielectric layer having 175nm thickness is formed on the substrate by sputtering ZnS blended with 20mol% SiO2. A recording layer is formed by sputtering a combined target with arranged small Nb chips, a 2nd dielectric layer made of the same material as the 1st dielectric layer is formed in 20nm thickness and a reflecting layer having 130nm thickness is formed. The resulant disk is taken out of the vacuum vessel, spin-coated with a UV-curing resin and irradiated with UV to form a resin layer having 10mum thickness.

公开(公告)号：JPH07142413A

公开(公告)日：1995-06-02

申请号：JP6315294

申请日：1994-03-31

Applicant: TORAY INDUSTRIES

Inventor： AKAMATSU TAKAYOSHI ,  NONAKA TOSHINAKA ,  NONAKA HARUKI

IPC: C01B33/00 ,  H01L21/205 ,  H01L31/04

Abstract: PURPOSE:To reduce the cost and weight of a solar cell or a liquid crystal display by depositing amorphous silicon, having conductivity higher than a specified value and doped with impurities, on a basic material having low melting point. CONSTITUTION:Amorphous silicon having conductivity of 1X10 S/cm or above and doped with impurities is deposited on a basic material having melting point of 290 deg.C or below. The doped amorphous silicon having high conductivity can be deposited while sustaining the temperature of the basic material at 170 deg.C or below through plasma decomposition of a mixed gas of hydrogenated silicon gas and boron or phosphorus using an ultrashort wave. This method allows employment of an inexpensive plastic material having relatively low heat resistance as the basic material.

公开(公告)号：JP2015090920A

公开(公告)日：2015-05-11

申请号：JP2013230135

申请日：2013-11-06

Applicant: TORAY INDUSTRIES

Inventor： NONAKA TOSHINAKA

IPC: H01L21/60

Abstract: 【課題】半導体実装において、ウェハに一括で実装用の接着剤を形成する工程数の少ない実装を可能としつつ、実装後の接着剤はみ出し形状を制御し、半導体チップの角部分外側への必要な量の接着剤のはみ出しと、辺の中央部外側への過剰なはみ出しを抑制できる、接着剤層付きウェハとその製造方法、それを用いた半導体装置の製造方法を提供することを目的とする【解決手段】電極を有する長方形状のチップが複数形成された半導体ウェハの電極側の面に接着剤層が形成された接着剤層付き半導体ウェハであって、前記接着剤層が前記チップそれぞれに対応する位置でチップ毎に形成されており、かつ前記長方形状のチップそれぞれの2本の対角線と重なる位置で接着剤層厚みの大きいX形状の部分を形成し、前記長方形状のチップそれぞれの各辺の中央部から前記長方形状のチップの中心部に向けて前記長方形状のチップの対角線上に位置する接着剤層より、接着剤層厚みが小さい部分を形成していることを特徴とする接着剤層付き半導体ウェハ。【選択図】図1