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    Field effect transistor and its manufacturing method
    1.
    发明专利
    Field effect transistor and its manufacturing method 有权
    场效应晶体管及其制造方法

    公开(公告)号：JP2004214386A

    公开(公告)日：2004-07-29

    申请号：JP2002381696

    申请日：2002-12-27

    Applicant: Toshiba Corp ,  株式会社東芝

    Inventor： MATSUSHITA DAISUKE ,  NISHIKAWA YUKIE ,  SATAKE HIDEKI ,  FUKUSHIMA SHIN

    IPC: H01L21/316 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

    Abstract: PROBLEM TO BE SOLVED: To solve the problem that an FET forming process is complicated, deterioration of yield due to complication is anticipated, and carrier mobility is deteriorated by thinning a strain Si layer, in a method using an SGOI (SiGe on insulator) substrate. SOLUTION: The field effect transistor is provided with a semiconductor region formed on a substrate, a first conductivity type channel region formed in the semiconductor region, a gate insulating film which is formed on the channel region and contains at least a metal oxide layer composed of crystalline substance different in lattice interval from the substrate, a gate electrode formed on the gate insulating film, and a second conductivity type source/drain region formed in the semiconductor region on both sides of the gate electrode. The lattice interval at least in the channel region of the substrate is characterized by being modulated. COPYRIGHT: (C)2004,JPO&NCIPI

    Abstract translation: 解决问题的方案为了解决FET形成过程复杂的问题，预期由于并入发生的产率的劣化，并且使用SGOI（SiGe on）的方法，通过使应变Si层变薄来降低载流子迁移率 绝缘体）基板。 解决方案：场效应晶体管设置有形成在衬底上的半导体区域，形成在半导体区域中的第一导电类型沟道区，栅极绝缘膜，其形成在沟道区上并且至少包含金属氧化物 由与基板不同的晶格间隔的晶体层，形成在栅极绝缘膜上的栅极电极和形成在栅电极两侧的半导体区域中的第二导电型源极/漏极区域构成。 至少在衬底的沟道区域中的晶格间隔的特征在于被调制。 版权所有（C）2004，JPO＆NCIPI

    Fet and its manufacturing method
    2.
    发明专利
    Fet and its manufacturing method 有权

    公开(公告)号：JP2004079659A

    公开(公告)日：2004-03-11

    申请号：JP2002235529

    申请日：2002-08-13

    Applicant: Toshiba Corp ,  株式会社東芝

    Inventor： NISHIKAWA YUKIE ,  MATSUSHITA DAISUKE ,  SATAKE HIDEKI ,  FUKUSHIMA SHIN

    IPC: H01L21/316 ,  H01L29/78

    CPC classification number: H01L29/512

    Abstract: PROBLEM TO BE SOLVED: To relieve concentration of electric field in a gate insulated film edge and restrain increase of leakage current, in an FET. SOLUTION: The FET is provided with a channel region formed on a surface of a semiconductor substrate, a source-drain region which is formed on the semiconductor substrate of both sides of the channel region, a first insulating film which is formed so as to cover at least the channel region, a second insulating film which is formed on a side part of the first insulating film so as to be in contact with the first insulating film and in contact with the semiconductor substrate on the source-drain region and whose permittivity is lower than that of the first insulating film, a third insulating film which is laminated on the second insulating film and whose permittivity is lower than that of the first insulating film and higher than the second insulating film, and a gate electrode formed on the first and the third insulating films. COPYRIGHT: (C)2004,JPO

    SEMICONDUCTOR MEMORY DEVICE
    3.
    发明专利
    SEMICONDUCTOR MEMORY DEVICE 审中-公开

    公开(公告)号：JP2003179210A

    公开(公告)日：2003-06-27

    申请号：JP2002346185

    申请日：2002-11-28

    Applicant: TOSHIBA CORP

    Inventor： OHARA RYOICHI ,  SHIMIZU TATSUO ,  FUKUSHIMA SHIN ,  KAWAKUBO TAKASHI

    IPC: H01L27/105 ,  H01L21/8246

    Abstract: PROBLEM TO BE SOLVED: To prevent an oxygen defect in a ferroelectric layer due to voltage stress. SOLUTION: The semiconductor memory device is provided with an Si plug 10 connected to a main electrode on one side of a transistor, a first barrier layer 21 whose area is identical to that of the upper end face of the Si plug 10 and which comes into contact with the Si plug 10, a second barrier layer 22 whose area is identical to that of the upper end face of the Si plug 10, which is composed of a material different from that for the first barrier layer 21 and which comes into contact with the first barrier layer 21, a lower electrode 24 which comes into contact with the second barrier layer 22 and which is composed of a conductive perovskite oxide, the ferroelectric layer 25 coming into contact with the lower electrode 24 and an upper electrode 26 coming into contact with the ferroelectric layer 25. A thin-film capacitor is constituted of the lower electrode 24, the upper electrode 26 and the ferroelectric layer 25 used to isolate a part between the lower electrode 24 and the upper electrode 26, the a-axis length Ab of the barrier layer is smaller than the intrinsic a-axis length Ao of the ferroelectric layer 25, and the a-axis length Ae of the lower electrode 24 is smaller than the a-axis length Ao. COPYRIGHT: (C)2003,JPO

    FIELD EFFECT TRANSISTOR
    4.
    发明专利
    FIELD EFFECT TRANSISTOR 失效

    公开(公告)号：JP2002289843A

    公开(公告)日：2002-10-04

    申请号：JP2001091169

    申请日：2001-03-27

    Applicant: TOSHIBA CORP

    Inventor： NISHIKAWA YUKIE ,  FUKUSHIMA SHIN ,  NAKAYAMA KOHEI ,  IKEGAWA SUMIO

    IPC: H01L29/78 ,  H01L21/316

    Abstract: PROBLEM TO BE SOLVED: To provide a field effect transistor, provided with the gate insulation film of a high dielectric constant, keeping proper leakage characteristics. SOLUTION: As the gate insulation film 33 of the field effect transistor, an oxide containing two or more kinds of metals selected from among rare earth elements is used. Also, the gate insulation film for which a crystal plane direction is oriented preferentially in the (111) direction in the oxide is used. Further, by turning the (111) preferred degree of orientation of the crystal plane oriention to 90% or higher, the dielectric constant of the gate insulation film is raised further.

    THIN-FILM CAPACITOR AND SEMICONDUCTOR MEMORY DEVICE
    5.
    发明专利
    THIN-FILM CAPACITOR AND SEMICONDUCTOR MEMORY DEVICE 失效

    公开(公告)号：JP2002076294A

    公开(公告)日：2002-03-15

    申请号：JP2000267527

    申请日：2000-09-04

    Applicant: TOSHIBA CORP

    Inventor： OHARA RYOICHI ,  SHIMIZU TATSUO ,  FUKUSHIMA SHIN ,  KAWAKUBO TAKASHI

    IPC: H01L27/105 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/108

    Abstract: PROBLEM TO BE SOLVED: To obtain proper ferroelectric characteristics by making fatty distorting a BTO film fully distorted, when the BTO is used for a capacitor insulating film, and to enable prevention of oxygen defects in a BTO film due to voltage stress. SOLUTION: A thin-film capacitor comprises a barrier layer 11, a lower electrode 14, a BTO ferroelectric layer 15, and an upper electrode 16, formed sequentially on an Si plug 10. In this capacitor, a TiAlN is used as the layer 11; an SrNbO3 is used as the electrode 14, an a-axial length Ab of the layer 11, an original a-axial length Ao of the layer 15; and an a-axial length Ae, after the epitaxial growth of the electrode 14 are set so as to satisfy relational formulae Ab/Ao

    SEMICONDUCTOR STORAGE DEVICE
    6.
    发明专利
    SEMICONDUCTOR STORAGE DEVICE 失效

    公开(公告)号：JPH10270654A

    公开(公告)日：1998-10-09

    申请号：JP7631597

    申请日：1997-03-27

    Applicant: TOSHIBA CORP

    Inventor： KAWAKUBO TAKASHI ,  ABE KAZUHIDE ,  FUKUSHIMA SHIN

    IPC: H01L27/10 ,  G11C11/22 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor storage device wherein a thin film capacitor with a ferroelectric film is used and high integration is possible. SOLUTION: The device is constituted by arranging a plurality of memory cells having a thin film capacitor with a ferroelectric film 14 and a pair of electrodes 13, 15 opposed through the ferroelectric film 14, and a transfer gate transistor connected to a thin film capacitor in a matrix form. A voltage which is equivalent to the width of a hysterisis curve when a thin film capacitor is subjected to saturation polarization amounts to 5% or more and 20% or less to a voltage difference between a positive direction and a negative direction during write operation. Furthermore, a residual polarization amount when a thin film capacitor is subjected to saturation polarization is 5% or more and 30% or less to a total polarization amount when a voltage during the write operation is applied.

    THIN-FILM CAPACITOR AND MANUFACTURE THEREOF
    7.
    发明专利
    THIN-FILM CAPACITOR AND MANUFACTURE THEREOF 失效

    公开(公告)号：JPH1093050A

    公开(公告)日：1998-04-10

    申请号：JP3939497

    申请日：1997-02-24

    Applicant: TOSHIBA CORP

    Inventor： ABE KAZUHIDE ,  KOMATSU SHUICHI ,  DEWA MITSUAKI ,  FUKUSHIMA SHIN ,  SANO KENYA ,  KAWAKUBO TAKASHI

    IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

    Abstract: PROBLEM TO BE SOLVED: To provide a thin-film capacitor capable of much charge with a small area. SOLUTION: The capacitor comprises a first electrode 2, having the cubic system (100) plane or tetragonal system (001) plane appearing on the surface, a dielectric thin-film 3 having an originally cubic Perovskite structure epitaxially grown on the electrode 2 and a second electrode 3 formed on this film 3 which meets V/V0 >=1.01 and c/a>=1.01, of the unit lattice vol. of the original Perovskite crystal structure (lattice const. a0 ) is V0 =a0 , deformed unit lattice vol. (lattice const. a=b≠c) of the tetragonal system after the epitaxial growth is V=a c, the lattice const. in the thickness direction is c and lattice const. in a direction parallel to the film surface is a.

    DIELECTRIC THIN-FILM ELEMENT
    8.
    发明专利
    DIELECTRIC THIN-FILM ELEMENT 失效

    公开(公告)号：JPH1093036A

    公开(公告)日：1998-04-10

    申请号：JP24229796

    申请日：1996-09-12

    Applicant: TOSHIBA CORP

    Inventor： FUKUSHIMA SHIN ,  ABE KAZUHIDE ,  DEWA MITSUAKI

    IPC: C01G51/00 ,  H01B3/12 ,  H01G4/33 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

    Abstract: PROBLEM TO BE SOLVED: To avoid oxidation which has adverse effects on the surface condition and electric characteristics of a conductive layer surface such as Si or W plugs existing at the bottom of a lower electrode, after enhancing the interface matching between a dielectric thin film and lower electrode. SOLUTION: An element 3 has a conductive Perovskite oxide-made lower electrode 4 and Perovskite oxide-made dielectric thin film 5 formed on this electrode. As a base layer 7 of the lower electrode 4, a layer is provided which is made of at least one of metals providing conductive oxides and nitrides, silicides and oxides of these conductive metals e.g. Ru, Re, Os, Rh and Ir or their oxides, silicates, nitrides, etc., non-oxidative Pt or Au layer or conductive Perovskite oxide-made amorphous layer.

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