公开(公告)号：JP2002075705A

公开(公告)日：2002-03-15

申请号：JP2000264184

申请日：2000-08-31

Applicant: TOSHIBA CORP

Inventor： IYOGI YASUSHI ,  SHIRAI TAKAO

IPC: H01C17/06 ,  H01C7/00

Abstract: PROBLEM TO BE SOLVED: To obtain a resistor substrate where heat dissipating property is high, adhesion between a ceramic substrate and a resistor layer can be improved and irregularity in resistance values, which is caused by deterioration with time, is reduced. SOLUTION: A resistor layer 4, composed of one kind of a metal compound from among ruthenium oxide, ruthenium nitride, tantalum oxide and tantalum nitride is collectively formed on a ceramic substrate 2 via a thin film 3, whose main component is titanium.

公开(公告)号：JP2001261444A

公开(公告)日：2001-09-26

申请号：JP2000085346

申请日：2000-03-24

Applicant: TOSHIBA CORP

Inventor： IYOGI YASUSHI ,  SATO HIDEKI ,  MIZUNOYA NOBUYUKI

IPC: B41J2/335 ,  C04B35/581

Abstract: PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride substrate, by which the aluminum nitride substrate having high thermal conductivity and having improved warkability can be obtained and by which a plurality of substrates are produced from a large size substrate, thereby mass-production of substrates and reduction of the production cost can be realized. SOLUTION: The aluminum nitride substrate is made of aluminum nitride having Vickers hardness Hv of >=1,000 and =2 and

公开(公告)号：JP2001168482A

公开(公告)日：2001-06-22

申请号：JP2000277578

申请日：2000-09-13

Applicant: TOSHIBA CORP

Inventor： NABA TAKAYUKI ,  KOMORIDA YUTAKA ,  NAKAYAMA NORIO ,  IYOGI YASUSHI

IPC: H05K1/09 ,  H01L23/13 ,  H01L23/373 ,  H05K1/02 ,  H05K1/03 ,  H05K3/38 ,  H05K3/46

Abstract: PROBLEM TO BE SOLVED: To provide a ceramics circuit substrate that has high junction strength, at the same time has high heat-resistance cycle, and has improved operational reliability as electronic equipment. SOLUTION: In this ceramics circuit substrate, where a ceramics substrate and a metal circuit board are jointed via a brazing material layer, the brazing material layer is made of Al-Si brazing material, and the amount of Si contained in the brazing material is 7 wt.% or less. Also, thin parts, holes and grooves are preferably provided at the peripheral part of the metal circuit board.

公开(公告)号：JPH1154532A

公开(公告)日：1999-02-26

申请号：JP20626097

申请日：1997-07-31

Applicant: TOSHIBA CORP

Inventor： ASAI HIRONORI ,  IYOGI YASUSHI ,  YANO KEIICHI

IPC: H01L23/12 ,  H01L21/52 ,  H01L21/60 ,  H05K1/00 ,  H05K3/46

Abstract: PROBLEM TO BE SOLVED: To reduce warp of a package and improve coplanarity when the package is thinned, by making the area of an adhesive agent layer inserted in the interface of a retaining substrate and a resin substrate larger than the mounting area of the resin substrate. SOLUTION: An aluminum nitride substrate 1 of 31×31 mm is used as a retaining substrate, and the outward form of a resin substrate 2 is 30×30 mm. Both of the sustrates are bonded by using an adhesive film 3 of 30×30 mm which is 60 μm thick. The area of the adhesive agent layer 3 is larger than the mounting area of the resin substrate 2. After bonding, the adhesive agent film 3 does not protrude from the outward form of the retaining substrate 1 but forms a fillet in the end portion. A semiconductor chip 4 is mounted on a ceramic substrate 1 with conducting adhesive agent 9, and connected with the resin substrate 2 through bonding wires 12. As a result, a compound package wherein the adhesive agent does not protrude from the outward form of a package and bonding strength is high can be obtained, and a subsequent assembling process can be smoothly progressed.

公开(公告)号：JPH10275879A

公开(公告)日：1998-10-13

申请号：JP8105797

申请日：1997-03-31

Applicant: TOSHIBA CORP

Inventor： ASAI HIRONORI ,  YANO KEIICHI ,  IYOGI YASUSHI

IPC: H01L23/12

Abstract: PROBLEM TO BE SOLVED: To increase the mounting reliability of a semiconductor chip and bonding reliability of a radiating fin and improve the electrical characteristics of a signal wiring, increase in wiring density and so on, in addition, reduce the manufacturing cost particularly in a semiconductor package, wherein a semiconductor chip of high power consumption and so on are mounted. SOLUTION: A ceramic substrate 4, where a semiconductor chip is mounted, is bonded to one major surface (lower surface) 2a of a metallic support substrate 2. A resin wiring base material 10, including a wiring layer 9a is bonded and fixed at the side where the ceramic substrate 4, is bonded of the metallic support substrate 2. A semiconductor chip 5 is bonded to the ceramic substrate 4 and is supported by the metallic support substrate 2 via the ceramic substrate 4. The semiconductor chip 5 is electrically connected to the wiring layer 9a.

公开(公告)号：JPH10256429A

公开(公告)日：1998-09-25

申请号：JP5320297

申请日：1997-03-07

Applicant: TOSHIBA CORP

Inventor： IYOGI YASUSHI ,  YASUMOTO YASUAKI ,  YANO KEIICHI ,  MONMA JUN ,  KIMURA KAZUO ,  ASAI HIRONORI

IPC: H01L23/13 ,  H01L23/12

Abstract: PROBLEM TO BE SOLVED: To achieve the improvement of the heat radiating property from a semiconductor element with the semiconductor element having the flip chip structure as the object and to achieve the correspondence with a narrow-pitch wiring, the compact configuration of a package outer shape, the improvement of the reliability of a connecting part to a mounting board, the reduction of the package manufacturing cost and the like. SOLUTION: A ceramic substrate 2 having a via-hole type inner wiring layer 5, wherein a cavity 4 is provided at the side of an upper surface 2a, and ball terminals 9 and the like are provided as outer connecting terminals at the side of a lower surface 2b, is used as the main body of a package. A semiconductor element 3 having the flip chip structure is contained in the cavity 4 and electrically connected to the package main body by a conductor layer 10 of a resin base material 11, which is bonded to the cavity forming surface 2a of the ceramic substrate 2. When the semiconductor element is directly bonded and mounted on the upper surface of the ceramic substrate e.g. the resin base material having the bent or curved shape and the resin base material having the divided shape are used.

公开(公告)号：JPH10256414A

公开(公告)日：1998-09-25

申请号：JP6147597

申请日：1997-03-14

Applicant: TOSHIBA CORP

Inventor： IYOGI YASUSHI ,  YANO KEIICHI ,  ASAI HIRONORI

IPC: H01L23/12 ,  H01L23/08

Abstract: PROBLEM TO BE SOLVED: To realize a ceramic package having more improved heat sink property to cope with the tendency of a mounted semiconductor toward a higher speed thereof and an increasing degree of heat generation therefrom. SOLUTION: A resin film 10 having a conductive layer 9 for connection with an electrode pad of a semiconductor device 6, is bonded to a ceramic substrate 2 mounting the semiconductor device 6 thereon. At the same time, a resin film 14 serving as an insulation layer is bonded to the resin film 10. At each portion, of the resin film 14, which corresponds to connecting point of the conductive layer 9 to each of inner interconnection layers 3 of the ceramic substrate 2, a land 14a is provided to which a heat sink metal projection 15 is bonded with a solder.

公开(公告)号：JPH10242320A

公开(公告)日：1998-09-11

申请号：JP3806497

申请日：1997-02-21

Applicant: TOSHIBA CORP

Inventor： KIMURA KAZUO ,  IYOGI YASUSHI

IPC: H01L23/12

Abstract: PROBLEM TO BE SOLVED: To increase the solder contact area to improve the mechanical strength and mounting reliability by providing metal parts having wider area than through-holes of green sheets and press-stacking the green sheets with metal plates and elastic bodies by a given stacking method. SOLUTION: A sheet 7 having opening 10 and sheet 8 having through-holes 9 and metal part 11 are formed. The through-holes 9 are filled with a conductor and coupled with the metal part 11 and have a wider area than that of the openings 10. The sheets 7, 8 are stacked with the openings 10 aligned with the through-holes 8, a metal plate 12 is laid on the openings 10 of the sheet 7 and elastic body 13 is contacted to the metal part 11 face of the sheet 8, the sheets 7, 8 are held between the plate 12 and elastic body 13 and pressed to laminate the sheets 7, 8. This improves the mounting reliability with recesses and bonds a semiconductor package with a large area.

公开(公告)号：JPH0794631A

公开(公告)日：1995-04-07

申请号：JP23984093

申请日：1993-09-27

Applicant: TOSHIBA CORP

Inventor： KOIWA KAORU ,  YAMAKAWA KOJI ,  IYOGI YASUSHI ,  YASUMOTO YASUAKI ,  IWASE NOBUO

IPC: H01L23/13 ,  H05K1/03 ,  H05K3/38

Abstract: PURPOSE:To provide a highly reliable ceramic circuit board in which high density and high integration are realized by forming a fine thin film pattern on a ceramic board. CONSTITUTION:In ceramic circuit board 16 wherein a Cu conductor film layer 12 is deposited on a ceramic board 11, a Cu oxide layer 13 or a Cu nitride layer is interposed between the ceramic board 11 and the Cu conductor film layer 12.

公开(公告)号：JPH06326431A

公开(公告)日：1994-11-25

申请号：JP2549094

申请日：1994-02-23

Applicant: TOSHIBA CORP

Inventor： YASUMOTO YASUAKI ,  YAMAKAWA KOJI ,  IYOGI YASUSHI ,  KOIWA KAORU ,  IWASE NOBUO

IPC: H05K1/03 ,  H05K1/00 ,  H05K3/38

Abstract: PURPOSE:To enable a circuit board to be enhanced in both heat dissipating properties and signal propagation velocity and less troubled by defects such as ply separation and the like by a method wherein a composite structure where dielectric films and wiring metal films are successively laminated is provided onto a board base, and voids specified in volume % are provided inside the dielectric films. CONSTITUTION:Wiring metal layers 12, 14, 16, and 18 patterned as prescribed are successively laminated on a board base 11 through the intermediary of dielectric thin films 13, 15, and 17. The wiring metal films 12, 14, 16, and 18 are interconnected with each other through the intermediary of contact holes provided to the dielectric thin films 13, 15, and 17. The dielectric thin films 13, 15, and 17 are formed of, at least, material selected from AlN, BN, diamond, diamond-like carbon, BeO, and SiC, and so set as to put voids contained in them in a volume fraction range of 5 to 95%. The dielectric thin films 13, 15, and 17 are high in thermal conductivity, low in dielectric constant, and excellent in heat dissipating properties, and the wiring metal films 12, 14, 16, and 18 are excellent in signal propagation velocity.