FIELD EMISSION TYPE COLD CATHODE AND MANUFACTURE THEREOF

    公开(公告)号:JPH11213863A

    公开(公告)日:1999-08-06

    申请号:JP869898

    申请日:1998-01-20

    Applicant: TOSHIBA CORP

    Abstract: PROBLEM TO BE SOLVED: To restrain delay of signal by lowering the wiring resistance of a gate electrode of a field emission type cold cathode. SOLUTION: An emitter electrode layer 13 is formed on a quartz glass substrate 11 via an ITO electrode layer 12 which serves as a cathode electrode. The emitter electrode layer 13 has a projecting part 20 which projects like a pyramid to the surface of the emitter electrode layer 13. A thin silicon oxide film 14 is formed on the emitter electrode layer 13. The silicon oxide layer 14 is formed except at a tip of the projection part 20 of the emitter electrode layer 13, and the emitter electrode layer 13 is exposed at the projecting part 20. A gate electrode 16 formed of a tungsten film having flat surface is formed on the silicon oxide film 14. The gate electrode 16 is formed with an opening part at a position over the tip of the projecting part 20.

    FIELD EMISSION COLD CATHODE ELECTRON DEVICE

    公开(公告)号:JPH1186759A

    公开(公告)日:1999-03-30

    申请号:JP23729597

    申请日:1997-09-02

    Applicant: TOSHIBA CORP

    Abstract: PROBLEM TO BE SOLVED: To prevent the generation of flickers of a fluorescent material, emitter damages, etc., and to prolong life and improve reliability. SOLUTION: This field emission cold cathode electron device comprises a field emission cold cathode 10 formed with a gate 23 via an SiO2 film 22 on an Si substrate 21 and an emitter 26 which emits an electron by a tunnel effect in an opening removed of the gate 23, and an anode part 30 formed with an anode 32 on a glass substrate 31, and a fluorescent material 33 oppositely arranged to the field emitting cold cathode 10 on its top. On a part removed of the gate 23 on the SiO2 film 22 of the field emission cold cathode 10, a fine particle adsorption electrode 28 made of Ga is formed.

    PLANE TYPE IMAGE DISPLAY DEVICE
    6.
    发明专利

    公开(公告)号:JPH1092347A

    公开(公告)日:1998-04-10

    申请号:JP24378496

    申请日:1996-09-13

    Applicant: TOSHIBA CORP

    Abstract: PROBLEM TO BE SOLVED: To provide such a plane type image display device with field emission cold cathodes as being capable of selecting fluorescences without high voltage switching. SOLUTION: Plural cold cathodes 10 are arranged in rows and columns. Gate electrodes 11 (11a, 11b) consisting of sets of two electrodes divided and insulated in rows are arranged to encircle the cold cathodes 10 in the same column. The cold cathodes 10 are formed with a spindt or transfer molding method, e.g. The gate electrodes 11 are arranged perpendicular to the arrangement of a red fluorescence 12a, a green fluorescence 12b and a blue fluorescence 12c formed via an anode on the surface of a glass face plate, not explaned here.

    FIELD EMISSION TYPE COLD CATHODE DEVICE AND MANUFACTURE THEREOF

    公开(公告)号:JPH1092301A

    公开(公告)日:1998-04-10

    申请号:JP24672196

    申请日:1996-09-18

    Applicant: TOSHIBA CORP

    Abstract: PROBLEM TO BE SOLVED: To obtain high productivity, uniform field emission characteristic and low-voltage driving by bonding with a support substrate an emitter formed at a recess of a molded substrate separated from a master substrate having its protrusion and separating the mold substrate. SOLUTION: The entire surface on a side having a tip end convergent protrusion of a master substrate such as Ni is oxidized and covered with an insulation layer 23, on which a thin molding layer 24 composed of Ni or the like is laminated and formed. A thick support layer 25 is formed on a layer 24 by electric plating or the like, a molded substrate layer 26 composed of the layers 24 and 25 is separated from a substrate 21 having the layer 23, and a recess 27 is exposed. At this time, an air ventilation hole 28 is formed on the substrate 26 as required. Next, an insulation layer 29 is covered on the recess 27 side surface of the substrate 26 by oxidization, on which a thin conductive material layer 14 such as Au is formed, and an emitter 16 having an engaging recess 15 is achieved. A support substrate 12 such as thermo-plastic resin having a protrusion 13 with which the recess 15 comes into intimate contact is formed and separated between the layer 29 and the layer 14.

    VACUUM MICROSWITCH
    8.
    发明专利

    公开(公告)号:JPH08315741A

    公开(公告)日:1996-11-29

    申请号:JP11944195

    申请日:1995-05-18

    Applicant: TOSHIBA CORP

    Abstract: PURPOSE: To enhance reliability by enclosing an overvoltage protective part in the same element by dividing a gate, and bypassing overvoltage by automatically turning it on when the overvoltage is detected. CONSTITUTION: A gate is divided into two parts of G0 and G1, and a main switch part 10 and an overvoltage protective part 11 are arranged in the same element. When voltage between A and K is not more than an overvoltage protective level, the protective part 11 does not operate, and the switch part 10 operates by an ON signal of a driving device 12. When it is not less than the overvoltage protective level, an overvoltage detecting circuit 13 detects this, and operates a gate pulse generator 14, and turns the protective part 11 on, and bypasses the voltage between A and K. When it reduces to the overvoltage protective level or less, the generator 14 is stopped, and the protective part 11 is turned off. In this way, the protective part 11 is automatically turned on, and since overvoltage is bypassed and restrained, reliability can be improved.

    RADIATION DETECTOR AND RADIATION MEASURING APPARATUS

    公开(公告)号:JPH0836061A

    公开(公告)日:1996-02-06

    申请号:JP17102794

    申请日:1994-07-22

    Applicant: TOSHIBA CORP

    Abstract: PURPOSE:To provide a radiation detector and a radiation measuring apparatus which are hardly deteriorated even in higly radioactive environment and high temperature environment and also provide a radiation measuring apparatus which can make the distribution of radiation quantity visible. CONSTITUTION:Regarding the radiation detector which is a detector provided with a substance which generates positively or negatively charged particles by radiation of any of alpha-ray, gamma-ray, and neutron beam and also provided with a cathode or an anode to capture the generated positively or negatively charged particles in order to generate electric signals following the number of the charged particles and measure the radiation quantity, the cathode is a cold- cathode 11 which can emit electrons.

    FINE VACUUM TUBE AND MANUFACTURE THEREOF

    公开(公告)号:JPH07254369A

    公开(公告)日:1995-10-03

    申请号:JP6988794

    申请日:1994-03-15

    Applicant: TOSHIBA CORP

    Abstract: PURPOSE:To enhance a field emission efficiency by providing an emitter material layer equipped with a projecting emitter having a sharp tip, an emitter core material layer superposed on the emitter material layer, and an anode electrode opposite to the emitter. CONSTITUTION:A recess is formed on an Si monocrystal substrate serving as an auxiliary substrate. A semiconductor layer composed of a boron diffusing layer 13 is formed on the surface of the Si monocrystal substrate including the recess. An insulative layer 14 is formed on the semiconductor layer. An emitter material layer 15 is formed on the insulative layer 14. On the layer 15, an emitter core material layer 16 is made of a material having a specific resistance larger than that of a constituent material of the layer 15. Consequently, an emitter 23 in conformity of the shape of the recess can be formed with high reproducibility. Furthermore, a protecting effect of the emitter 23 by the layers 13, 14 allows stable formation of the pyramid-like emitter 23 having a sharp tip.

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