公开(公告)号：JPH10268330A

公开(公告)日：1998-10-09

申请号：JP7709897

申请日：1997-03-28

Applicant: TOSHIBA CORP

Inventor： HARUHARA KAZUYUKI ,  SHIMIZU SEISABURO ,  OKAJIMA MASASUE

IPC: G02F1/137 ,  G02F1/1341 ,  G02F1/1347

Abstract: PROBLEM TO BE SOLVED: To prevent a liquid crystal cell from being broken and to improve the reliability by injecting liquid crystal into all layers at the same time by evacuating the part between substrates through a suction hole and injecting the liquid crystal through an injection hole. SOLUTION: Supply holes 10 for liquid crystal are formed at distances from a substrate end surface to prevent color mixing due to a creeping phenomenon of the liquid crystal. The mixing of an air bubble depends upon how liquid crystal flows around in the cell, so an injection hole 11 is made common to three layers and a bank is formed of a seal 9 to fill the cell uniformly with the injected liquid crystal, so that no air bubble is generated. Further, a bank 9 is formed of a seal inside the suction hole 11 and injection hole 10 and a sucking-out hole 13 and a sucking-in hole 12 are provided dispersedly; and the liquid crystal is hard to flow around specially to corner parts, so the sucking-in hole 2 is provided preferably in the corner. When the sucking-in hole 11 or sucking-out hole 13 is provided at the corner part of a pixel area 14, the liquid crystal can smoothly be charged in the corner part on the side of the sucking-in hole 11. Thus, the bank is provided in the seal to obtain a panel containing no air bubble.

公开(公告)号：JPH1090714A

公开(公告)日：1998-04-10

申请号：JP24643596

申请日：1996-09-18

Applicant: TOSHIBA CORP

Inventor： HARUHARA KAZUYUKI ,  ENOMOTO SHINTARO ,  OKAJIMA MASASUE

IPC: G02F1/1347 ,  G02F1/1333

Abstract: PROBLEM TO BE SOLVED: To provide a liquid crystal display element inconspicuous in parallax and excellent in display quality by providing a liquid crystal layer arranged between a pair of substrates and incorporating plural areas having different hues into respective liquid crystal layers. SOLUTION: Respective liquid crystal layer 4 is incorporated with plural areas having different hues. For instance, transparent electrodes 3 are provided on one side surface of a transparent substrate 1 of an uppermost layer and both surfaces of the transparent substrate 1 of a middle layer, and a reflection electrode 5 is provided on the transparent substrate 1 of a lowermost layer. Then, the liquid crystal layers 4 are provided in cells constituted so as to oppose the transparent electrodes 3 to each other and the transparent electrode 3 to the reflection electrode 5, and are provided with the areas changing three colors hues in pixel. Thus, this element becomes the liquid crystal display element with the reduced parallax and the excellent display quality. That is, since the element is constituted so that minute areas with different hues are arranged for every pixel, and the hues are changed, the change of color or brightness in the end surface of this minute area becomes inconspicuous by color mixture.

公开(公告)号：JPH05175605A

公开(公告)日：1993-07-13

申请号：JP7173192

申请日：1992-03-27

Applicant: TOSHIBA CORP

Inventor： JIYON RENII ,  OKAJIMA MASASUE ,  HATAGOSHI GENICHI

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/223 ,  H01S5/34 ,  H01S5/343 ,  H01S5/347

Abstract: PURPOSE:To furnish a practical semiconductor laser device being excellent in laser characteristics such as a threshold current density, a maximum operational temperature, etc. CONSTITUTION:In regard to a semiconductor laser device having a DH structure wherein an active layer formed on a Gaps substrate l and constituted of Iny(Ga1-xAlx)1-yP is held between n-type and p-type clad layers 2 and 5 constituted of Inx(Ga1-xAlx)1-zP, a semiconductor laser device wherein a part of the p-type clad layer 5 is made to have a multiple quantum barrier structure and the number of quantum barriers is made to be three to ten.

公开(公告)号：JPH04111486A

公开(公告)日：1992-04-13

申请号：JP23008590

申请日：1990-08-31

Applicant: TOSHIBA CORP

Inventor： ITAYA KAZUHIKO ,  OKAJIMA MASASUE ,  ISHIKAWA MASAYUKI

IPC: H01S5/00

Abstract: PURPOSE:To prevent the dispersion of element dimension and improve uniformity of element properties and improve reliability by etching the layer, whose composition is different from that of the InGaAlP clad layer which forms a double hetero structure part, so as to form a ridge. CONSTITUTION:A ridge is formed by the etching of the GaAlAs layer 16, whose composition is different from that of an InGaAlP clad layer 15 which forms a double hetero structure. Accordingly, the thickness of the second conductivity type of first clad layer 15 is not determined by the depth of etching, but determined by the thickness of the clad layer formed first. Furthermore, the depth of etching in forming a ridge part is determined by the thickness of the second conductivity type of second clad layer 16, so the width W of the ridge part does not change by the difference of etching depth, and the width W is determined favorably in controllability. Hereby, the dispersion of the element dimension can be reduced excellently in reproducibility, and the laser device, where operation voltage is low and the highest oscillation temperature is high, can be produced excellently in yield rate.

公开(公告)号：JPH0344085A

公开(公告)日：1991-02-25

申请号：JP17808689

申请日：1989-07-12

Applicant: TOSHIBA CORP

Inventor： OKAJIMA MASASUE ,  HATAGOSHI GENICHI ,  UEMATSU YUTAKA

IPC: H01S5/00

Abstract: PURPOSE:To increase only the quantity of the intrusion of light to the n-type clad layer side having low resistivity without augmenting the distance of the intrusion of light to a p-type InGaAlP clad layer having high resistivity, and to reduce the optical density of an active layer by forming an optical guide layer between the active layer and an n-type clad layer. CONSTITUTION:Since an optical guide layer 12 having a refractive index higher than clad layers 11, 14 is formed brought into contact with an active layer 13, light is mainly wave-guided in the optical guide layer 12. Consequently, the optical density of the active layer 13 is made smaller than normal double hetero-structure having no optical guide layer having the same active-layer thickness by approximately forty %, and a COD optical output is increased by approximately one and a half times. Since the intrusion of light to the outside of the active layer 13 is extended to the optical guide layer 12 and n clad layer 11 side, the sum total of the thickness of the optical guide layer 12 and the clad layer 11 on the n side must be increased to 1.5mum in order to prevent the augmentation of absorption loss in a GaAs substrate 10.

公开(公告)号：JPH02186327A

公开(公告)日：1990-07-20

申请号：JP622489

申请日：1989-01-13

Applicant: TOSHIBA CORP

Inventor： HATAGOSHI GENICHI ,  OKAJIMA MASASUE ,  TERAJIMA KAZUTAKA ,  UEMATSU YUTAKA

IPC: G02B6/12 ,  G02B5/18 ,  G02B5/28 ,  G02F1/37

Abstract: PURPOSE:To enhance the conversion efficiency from a basic wave to a second harmonic wave by providing reflecting films on the end faces of a light guide. CONSTITUTION:The light guide consisting of a core 1 and a clad 12 constitute the axisymmetrical fiber type light guide and the reflecting films 23, 14 are respectively deposited on both end faces of the light guide. The basic wave 15 is made incident to the inside of the core 11 from the end face provided with a 2nd reflecting film 23 and the Cherenkov radiation light 16 propagated in the clad 12 is emitted from the end face provided with a 1st reflecting film 14. The light power in the pi waveguide is increased by providing the reflecting films on the end faces of the light guide in such a manner, by which the conversion efficiency from the basic wave to the second harmonic wave of the light is enhanced.

公开(公告)号：JPS63237590A

公开(公告)日：1988-10-04

申请号：JP7212587

申请日：1987-03-26

Applicant: TOSHIBA CORP

Inventor： MIHASHI HIROSHI ,  OKAJIMA MASASUE ,  BEPPU TATSURO

IPC: H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00

Abstract: PURPOSE:To obtain an oscillation wavelength in an ultraviolet range by employing a material with a lattice constant smaller than the lattice constant of GaAs as a substrate material. CONSTITUTION:A substrate crystal which has a lattice constant smaller than that of GaAs and larger than that of ZnS and whose lattice can be matched with the lattice of a semiconductor layer built up on it is employed as a substrate 11, ZnSxSeyTe1-x-y (0

公开(公告)号：JPS63213377A

公开(公告)日：1988-09-06

申请号：JP4514587

申请日：1987-03-02

Applicant: TOSHIBA CORP

Inventor： KAWACHI MASARU ,  OKAJIMA MASASUE ,  HIRAHARA KEIJIRO

IPC: H01L21/365 ,  H01L33/28

Abstract: PURPOSE:To restrain the absorption into the inside of a crystal, and obtain an excellent LED for blue light, by forming, on a ZnSe substrate crystal, a ZnSSeTe layer whose forbidden bandwidth is narrower than that of the ZnSe crystal, and forming a generation junction. CONSTITUTION:The title semiconductor light emitting element comprises the following stacked in order on the ZnSe single crystal substrate 11; a first conductivity type ZnSxSe1-x-yTey(0

公开(公告)号：JPS62209833A

公开(公告)日：1987-09-16

申请号：JP5142986

申请日：1986-03-11

Applicant: TOSHIBA CORP

Inventor： KAMATA ATSUSHI ,  OKAJIMA MASASUE ,  HIRAHARA KEIJIRO

IPC: H01L21/205 ,  H01L21/365 ,  H01L33/28 ,  H01L33/30

Abstract: PURPOSE:To obtain a crystal which has a low resistivity and emits blue light at a room temperature by making the composition ratio of a group II element in the crystal less than a specific value. CONSTITUTION:In order to realize a blue light emitting device (especially LED and LD), a low resistivity and a high blue light emission intensity are essential. For that purpose, paying attention to a group II element which is an N-type donor impurity contained by ZnSxSe1-x, the relations between the group II element concentration in the crystal, the electron concentration (n), the electron mobility mu, a deep electron trapping level and further a PL spectrum at a room temperature obtained by SIMS analysis are studied. As a result, if the group II impurity concentration is predetermined within a proper range, the growth of the crystal which shows a low resistivity and blue light emission can be made to grow. In other words, the group II impurity concentration contained in ZnSxSe1-x (0

公开(公告)号：JPS61104680A

公开(公告)日：1986-05-22

申请号：JP22615484

申请日：1984-10-27

Applicant: Toshiba Corp

Inventor： NAKAMURA MASARU ,  OKAJIMA MASASUE ,  KOMATSUBARA TADASHI ,  SADAMASA TETSUO

IPC: H01L31/12 ,  H01L33/12 ,  H01L33/14 ,  H01L33/20 ,  H01L33/30 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/0025 ,  H01L33/0062

Abstract: PURPOSE:To enable the inexpensive production of LEDs of high luminous efficiency by using organic metallic vapor phase growth 1 (MOCVD) for the crystal growth of a hetero junction structure. CONSTITUTION:An N-GaAs buffer layer 12, an N-Ga0.65Al0.35As first clad layer 13, a P-GaAs active layer 14, and a P-Ga0.65Al0.35As second clad layer 15 are successively grown on an N-GaAs substrate 11 by MOCVD. After formation of an ohmic electrode 16, an SiO2 film 17 is formed, and a P-side electrode 18 is formed. Thereafter, an N-side electrode 19 is formed by polishing the back of the substrate 11, and an Au layer 20 is formed on the electrode 18. Next, a photo output lead-out window 21 is formed by etching away the substrate 11 and the buffer layer 12 to the depth of the clad layer 13. The LED produced by MOCVD generates no sag on the surface of the clad layer 13 and can improve the efficiency of coupling with the photo buffer. Besides, the wafer of large aperture and excellent uniformity can be obtained and is effective for mass production.

Abstract translation: 目的：通过使用有机金属气相生长1（MOCVD）来实现异质结结构的晶体生长，从而能够廉价地生产高发光效率的LED。 构成：N-GaAs缓冲层12，N-Ga0.65Al0.35As第一包层13，P-GaAs活性层14和P-Ga0.65Al0.35As第二包覆层15依次生长在N -GaAs衬底11。 在形成欧姆电极16之后，形成SiO 2膜17，形成P侧电极18。 然后，通过对基板11的背面进行研磨而形成N侧电极19，在电极18上形成Au层20.接下来，通过蚀刻掉基板11而形成光输出引出窗21， 缓冲层12到包覆层13的深度。由MOCVD产生的LED在包覆层13的表面上不产生凹陷，并且可以提高与光缓冲器的耦合效率。 此外，可以获得大孔径的晶片和优异的均匀性，并且对于批量生产是有效的。