公开(公告)号：JP2020092144A

公开(公告)日：2020-06-11

申请号：JP2018227466

申请日：2018-12-04

Applicant: TOSHIBA CORP

Inventor： OSAWA YUICHI ,  SHIMIZU MARIKO ,  SHIRATORI SATOSHI ,  SUGIYAMA HIDEYUKI ,  ALTANSARGAI BUYANDALAI ,  YODA HIROAKI

IPC: H01L21/8239 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08

Abstract: 【課題】安定した動作が得られる磁気記憶装置及びその製造方法を提供する。【解決手段】実施形態に係る磁気記憶装置は、第1導電層と、第1磁性層と、第1対向磁性層と、第1非磁性層と、非磁性の第1金属層と、第1絶縁部と、第1絶縁層と、を含む。第1導電層は、第1領域と、第2領域と、第1領域と第2領域との間の第3領域と、を含む。第1対向磁性層は、第1領域から第2領域への第2方向と交差する第1方向において第3領域と第1磁性層との間に設けられる。第1磁性層は、第1磁性層と第1対向磁性層との間に設けられる。第1対向磁性層から第1金属層の少なくとも一部への方向は、第2方向に沿う。第1金属層から第1絶縁部への方向は、第1方向に沿う。第1磁性層の少なくとも一部から第1絶縁部への方向は、第2方向に沿う。第1絶縁層は、第2方向において第1金属層と第1対向磁性層との間に設けられる。【選択図】図1

公开(公告)号：JP2020009954A

公开(公告)日：2020-01-16

申请号：JP2018130943

申请日：2018-07-10

Applicant: TOSHIBA CORP

Inventor： YODA HIROAKI ,  TAKAYA SATOSHI ,  OSAWA YUICHI ,  SHIMOMURA NAOHARU ,  KOI KATSUHIKO ,  KATO YUSHI ,  FUJITA SHINOBU

IPC: H01L21/8239 ,  G11C11/16 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08

Abstract: 【課題】記憶密度の向上が可能な磁気記憶装置を提供する。【解決手段】実施形態によれば、磁気記憶装置は、導電層、積層体及び制御部を含む。導電層は、第1領域と、第2領域と、第1領域と第2領域との間の第3領域と、を含む。積層体は、第1、第2磁性層、非磁性層と、を含む。制御部は、第1動作において、第1磁性層を第1電位に設定し、第1領域から第2領域への向きの第1電流を導電層に供給して、積層体を第1抵抗状態とし、第2動作において、第1磁性層を第2電位に設定し、第1電流を導電層に供給して、積層体を第2抵抗状態とし、第3動作において、第1磁性層を第3電位に設定しつつ、第2領域から第1領域への向きの第2電流を導電層に供給して、積層体を第3抵抗状態とする。【選択図】図1

公开(公告)号：JP2013069821A

公开(公告)日：2013-04-18

申请号：JP2011206667

申请日：2011-09-21

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAIDA DAISUKE ,  AMANO MINORU ,  NAGASAWA TSURUMI ,  OSAWA YUICHI ,  ITO JUNICHI

IPC: H01L21/8246 ,  G11C11/15 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08

CPC classification number: G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To provide a nonvolatile storage device capable of a stable operation.SOLUTION: According to an embodiment, a nonvolatile storage device comprises a magnetic storage element and a control part. The magnetic storage element includes a laminate. The laminate includes a first lamination part and a second lamination part. The first lamination part includes: a first ferromagnetic layer having fixed magnetization; a second ferromagnetic layer having a variable magnetization direction; and a first non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The second laminate part is laminated on the first lamination part along a lamination direction. The second lamination part includes: a third ferromagnetic layer in which magnetization is rotated to generate oscillation by a supplied current; a fourth ferromagnetic layer having fixed magnetization; and a second non-magnetic layer provided between the third ferromagnetic layer and the fourth ferromagnetic layer. The control part includes a read-out part reading out a magnetization direction of the second ferromagnetic layer by detecting a change in oscillation frequency of the third ferromagnetic layer.

Abstract translation: 要解决的问题：提供能够稳定工作的非易失性存储装置。 解决方案：根据实施例，非易失性存储装置包括磁存储元件和控制部件。 磁存储元件包括层压体。 层压体包括第一层压部分和第二层压部分。 第一层压部件包括：具有固定磁化强度的第一铁磁层; 具有可变磁化方向的第二铁磁层; 以及设置在第一铁磁层和第二铁磁层之间的第一非磁性层。 第二层压体部分沿层叠方向层压在第一层压部件上。 第二层压部件包括：第三铁磁层，其中磁化被旋转以通过供应的电流产生振荡; 具有固定磁化强度的第四铁磁层; 以及设置在第三铁磁层和第四铁磁层之间的第二非磁性层。 控制部分包括通过检测第三铁磁层的振荡频率的变化而读出第二铁磁层的磁化方向的读出部分。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012195485A

公开(公告)日：2012-10-11

申请号：JP2011059179

申请日：2011-03-17

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SAIDA DAISUKE ,  AMANO MINORU ,  ITO JUNICHI ,  OSAWA YUICHI ,  KASHIWADA SAORI ,  KAMATA SHINGI ,  DAIBO TATATOMI

IPC: H01L27/105 ,  H01L21/8246 ,  H01L29/82 ,  H01L43/08

CPC classification number: G11B5/66 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To provide a magnetic storage element and a nonvolatile storage device in which flux reversal in write time occurs at higher speed.SOLUTION: According to an embodiment, a magnetic storage element provided with a laminated body is provided. The laminated body includes a first lamination part and a second lamination part. The first lamination part includes: a first ferromagnetic layer with magnetization fixed to a first direction having a vertical component with respect to a film surface; a second ferromagnetic layer with a magnetization direction variable in a direction perpendicular to the film surface; and a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The second lamination part includes: a third ferromagnetic layer with a magnetization direction variable in a direction parallel with the film surface; a fourth ferromagnetic layer with magnetization fixed to a second direction having a vertical component with respect to the film surface; and a second non-magnetic layer between the third ferromagnetic layer and the fourth ferromagnetic layer. In a plane having a normal line along a lamination axis, an outer edge of the fourth ferromagnetic layer has a portion outer than an outer edge of the first lamination part.

Abstract translation: 要解决的问题：提供一种磁存储元件和非易失性存储装置，其中在较高速度下发生写入时间内的磁通反转。 解决方案：根据一个实施例，提供一种设置有层压体的磁存储元件。 层叠体包括第一层叠部和第二层叠部。 第一层压部件包括：具有固定到第一方向的磁化的第一铁磁层，具有相对于膜表面的垂直分量; 第二铁磁层，其磁化方向在与膜表面垂直的方向上可变; 以及在第一铁磁层和第二铁磁层之间的第一非磁性层。 第二层压部件包括：在与膜​​表面平行的方向上具有可变化磁化方向的第三铁磁层; 具有固定到第二方向的磁化的第四铁磁层，具有相对于膜表面的垂直分量; 以及在第三铁磁层和第四铁磁层之间的第二非磁性层。 在沿着层叠轴线具有法线的平面中，第四铁磁层的外边缘具有比第一层叠部分的外边缘外的部分。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012064901A

公开(公告)日：2012-03-29

申请号：JP2010210154

申请日：2010-09-17

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： TAKAHASHI SHIGEKI ,  OSAWA YUICHI ,  ITO JUNICHI ,  KAMATA CHIKAYOSHI ,  KASHIWADA SAORI ,  AMANO MINORU ,  YODA HIROAKI

IPC: H01L27/105 ,  H01L21/8246 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: PROBLEM TO BE SOLVED: To suppress deterioration of spin injection magnetization inversion characteristics of a magnetoresistance effect element used in a memory cell, and to manufacture the magnetoresistance effect element at a high yield.SOLUTION: The magnetic memory of an embodiment includes at least one memory cell. The memory cell has a magnetoresistance effect element as a memory element, and first and second electrodes for energizing the magnetoresistance effect element. The magnetoresistance effect element includes a first magnetic layer having variable magnetization almost perpendicular to a film surface, a tunnel barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunnel barrier layer while having invariable magnetization almost perpendicular to the film surface. The first magnetic layer contains a first region, and a second region provided on the outside of the first region so as to surround the first region while having perpendicular magnetic anisotropy energy smaller than that of the first region. The second magnetic layer contains a third region, and a fourth region provided on the outside of the third region so as to surround the third region while having perpendicular anisotropy energy smaller than that of the third region.

Abstract translation: 要解决的问题：为了抑制在存储单元中使用的磁阻效应元件的自旋注入磁化反转特性的劣化，并以高产率制造磁阻效应元件。 解决方案：实施例的磁存储器包括至少一个存储单元。 存储单元具有作为存储元件的磁阻效应元件，以及用于激励磁阻效应元件的第一和第二电极。 磁阻效应元件包括具有几乎垂直于膜表面的可变磁化的第一磁性层，设置在第一磁性层上的隧道势垒层，以及设置在隧道势垒层上的第二磁性层，同时具有几乎垂直于膜的不变磁化强度 表面。 第一磁性层包含第一区域和第二区域，该第二区域设置在第一区域的外侧，以围绕第一区域，同时具有小于第一区域的垂直磁各向异性能量。 第二磁性层包含第三区域，第四区域设置在第三区域的外侧，以围绕第三区域，同时具有小于第三区域的垂直各向异性能量。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011215371A

公开(公告)日：2011-10-27

申请号：JP2010083395

申请日：2010-03-31

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： OSAWA YUICHI ,  ITO JUNICHI ,  KASHIWADA SAORI ,  KAMATA SHINGI

IPC: G03F1/68 ,  G03F1/80 ,  G03F7/40 ,  H01L21/027 ,  H01L21/3065

CPC classification number: H01L21/0337 ,  H01L43/12

Abstract: PROBLEM TO BE SOLVED: To provide a mask for processing of large process margin and small variation in a method of producing the mask.SOLUTION: The method of producing the mask includes: a step of forming a core material pattern on a substrate; a step of forming a first film containing a first material so as to cover the top surface and side surface of the core material pattern; a step of forming a second film containing a second material on the first film; a step of forming a side wall layer containing the first film and the second film on the side surface of the core material pattern, and anisotropically etching the first film and the second film so as to remove the first film and the second film other than the side wall layer; a step of isotropically etching the first film of the side wall layer; and a step of removing the core material pattern.

Abstract translation: 要解决的问题：提供一种掩模，用于处理大的工艺余量和在制造掩模的方法中的小变化。解决方案：制造掩模的方法包括：在基材上形成芯材图案的步骤; 形成包含第一材料以覆盖芯材图案的顶表面和侧表面的第一膜的步骤; 在所述第一膜上形成含有第二材料的第二膜的步骤; 在芯材图案的侧面上形成含有第一膜和第二膜的侧壁层的步骤，并且各向异性地蚀刻第一膜和第二膜，以除去第一膜和第二膜以外的第一膜和第二膜 侧壁层; 对侧壁层的第一膜进行各向同性蚀刻的工序; 以及去除芯材图案的步骤。

公开(公告)号：JP2009194160A

公开(公告)日：2009-08-27

申请号：JP2008033400

申请日：2008-02-14

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： YANAGI AKISHI ,  OSAWA YUICHI ,  NAKAMURA SHIHO ,  SAIDA DAISUKE ,  MORISE HIROSHI

IPC: H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC classification number: G11B25/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

Abstract: PROBLEM TO BE SOLVED: To minimize variations of magnetization reversal and reduce inversion current in magnetization reversal by spin implantation. SOLUTION: A magnetic memory includes: a magnetic recording element 1 which includes a first magnetization pinned layer 2 in which the direction of magnetization is pinned, a magnetic recording layer 6 in which spin polarized current flows and thereby the direction of magnetization is variable, and a first non-magnetic layer 4 arranged between the first magnetization pinned layer and the magnetic recording layer; and a memory cell which includes an interconnection 30 for a high frequency current magnetic field arranged on the magnetic recording element and making a high frequency field generated by high frequency current flows act in a substantially quadrature direction with an easy magnetization axis of the magnetic recording layer, and a grand wire 35 formed in an opposite side of the magnetic recording element to the interconnection for a high frequency current magnetic field. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了最小化磁化反转的变化并减少通过自旋植入的磁化反转中的反转电流。 磁存储器包括：磁记录元件1，其包括其中磁化方向被钉扎的第一磁化钉扎层2，磁性记录层6，其中自旋极化电流流动，从而磁化方向为 以及布置在第一磁化被钉扎层和磁记录层之间的第一非磁性层4; 并且存储单元包括布置在磁记录元件上的用于高频电流磁场的互连线30，并且使得由高频电流流动产生的高频场作用在大致正交的方向上，磁记录层的易磁化轴 以及形成在磁记录元件的相对侧的高频电流磁场的互连线的粗线35。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2005101214A

公开(公告)日：2005-04-14

申请号：JP2003332082

申请日：2003-09-24

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： NAKAMURA SHIHO ,  HANEDA SHIGERU ,  OSAWA YUICHI

IPC: H01L43/08

Abstract: PROBLEM TO BE SOLVED: To obtain a high reproduction output regardless of a fine magnetic domain structure.
SOLUTION: A magnetic reproduction element comprises a pin layer 6 wherein a magnetization direction is fixed, a free layer 10 wherein a magnetization direction is variable, an intermediate layer 8 formed between the pin layer and the free layer, a first electrode layer 2 formed on one face of the pin layer opposite to the intermediate layer formed side, and a second electrode layer 12 formed on one face of the free layer opposite to the intermediate layer formed side. By causing a sense current to flow between the first and the second electrode layers, a magnetic field is detected. The magnetization direction of the free layer before the application of the sense current is nearly anti-parallel to the magnetization direction of the pin layer. The shape of the free layer satisfies b a, where (a) is a length of one-directional anisotropy applied to the pin layer, and (b) is a length perpendicular to the direction of the one-directional anisotropy. When the sense current is applied, the magnetization direction of the free layer is set at an angle θ (45°≤θ≤135°) with respect to the magnetization direction of the pin layer.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：无论细磁畴结构如何，都能获得高再现输出。 解决方案：磁性再现元件包括其中磁化方向固定的销层6，磁化方向可变的自由层10，形成在引脚层和自由层之间的中间层8，第一电极层 2形成在与中间层形成侧相对的针层的一个面上，以及形成在与中间层形成侧相对的自由层的一个面上的第二电极层12。 通过使感测电流在第一和第二电极层之间流动，检测到磁场。 施加感应电流之前的自由层的磁化方向几乎与引脚层的磁化方向反平行。 自由层的形状满足b <200nm，b> a，其中（a）是施加到针层的一向各向异性的长度，（b）是与单向的方向垂直的长度 各向异性。 当施加感测电流时，自由层的磁化方向相对于销层的磁化方向被设定为角度θ（45°≤θ≤135°）。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004128080A

公开(公告)日：2004-04-22

申请号：JP2002287701

申请日：2002-09-30

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： KAMIGUCHI YUZO ,  TAKAGISHI MASAYUKI ,  OSAWA YUICHI

IPC: G11B5/39 ,  G01R33/09 ,  G11B5/00 ,  H01L43/00 ,  H01L43/08

CPC classification number: G11B5/3903 ,  G01R33/09 ,  G11B5/39 ,  G11B2005/0002 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To permit to obtain a sensitivity, achievable an excellent error rate in a high recording density.
SOLUTION: A reproducing head is provided with a magnetization free layer having two opposing main surfaces and one surface substantially parallel to a medium opposing surface, a non-magnetic layer formed on a surface at the opposite side to the medium of the magnetization free layer so as to be contacted with the magnetization free layer, and a pair of magnetization adhering layers formed on the opposite surface of magnetization free layer of the non-magnetic layer so as to be contacted with the non-magnetic layer and extended outwardly. The reproducing head is constituted so that a sense current is made to flow between the magnetization free layer and the pair of magnetization adhering layers.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002109707A

公开(公告)日：2002-04-12

申请号：JP2000300660

申请日：2000-09-29

Applicant: TOSHIBA CORP

Inventor： OSAWA YUICHI ,  YODA HIROAKI ,  HARA MICHIKO ,  HASHIMOTO SUSUMU

IPC: G01R33/09 ,  G11B5/39 ,  H01F41/14 ,  H01L43/08 ,  H01L43/12

Abstract: PROBLEM TO BE SOLVED: To make it possible to prevent the fall of the yield and generation of the Barkhausen noise as much as possible. SOLUTION: This method is characterize in comprising a step of including a magnetic sensitive layer with a magnetization in plane, forming a current perpendicular to plane type magneto resistive effect film 4 which perpendicularly runs the sense current to a film plane and carrying out patterning into a component configuration, and a step of forming a magnetic yoke 12 which covers the magneto resistive effect film 4 carried out patterning into the component configuration.