公开(公告)号：JP2010287656A

公开(公告)日：2010-12-24

申请号：JP2009139091

申请日：2009-06-10

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： SASAKI OSAMU

IPC: H01L27/148

CPC classification number: H01L27/14685 ,  H01L27/14623 ,  H01L27/14806

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid-state imaging device in which a transfer electrode is precisely formed at a desired position, and a transfer barrier is formed precisely to a desired depth and concentration.
SOLUTION: On an Si substrate 12 where a channel region 13 is formed, an opening 23-1 and a thin film part 23-2 are formed by exposing and developing a resist layer 23 on the Si substrate 12 using a grating mask having an opening pattern 24-1 through which light is completely transmitted and a dot pattern region 24-2 through which light smaller in quantity than the light transmitted through the opening pattern 24-1 is transmitted. After the transfer barrier part 15 is formed by implanting ions into the Si substrate 12 using the resist layer 23 as a mask, a positioning mark 16 is formed by etching the Si substrate 12 through the resist layer 23 as the mask.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造其中转移电极精确地形成在期望位置的固态成像装置的方法，并且将转移势垒精确地形成为期望的深度和浓度。 解决方案：在形成沟道区域13的Si衬底12上，通过使用光栅掩模在Si衬底12上曝光和显影抗蚀剂层23来形成开口23-1和薄膜部分23-2 具有光完全透过的开口图案24-1和透过开口图案24-1的光量比其透过的光量小的点图形区域24-2。 在通过使用抗蚀剂层23作为掩模将离子注入Si衬底12中形成转移阻挡部分15之后，通过蚀刻通过抗蚀剂层23的Si衬底12作为掩模来形成定位标记16。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2007243100A

公开(公告)日：2007-09-20

申请号：JP2006067216

申请日：2006-03-13

Applicant: Iwate Toshiba Electronics Co Ltd ,  Toshiba Corp ,  岩手東芝エレクトロニクス株式会社 ,  株式会社東芝

Inventor： SASAKI OSAMU ,  SUGANO KATSUHIRO

IPC: H01L27/146 ,  H01L31/10

CPC classification number: H01L27/14643 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/14689

Abstract: PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of sufficiently reducing a dark current, and to provide its manufacturing method. SOLUTION: The solid state imaging device is formed by successively laminating a photodiode, a gate electrode layer for reading or transferring charges stored in the photodiode, a first inter-layer insulating film comprising of SiO 2 , a first metal wiring layer, a second inter-layer insulating film composed of SiO 2 , a second metal wiring layer, an USG film containing hydrogen and a passivation film containing hydrogen on the surface of an Si semiconductor substrate. Also, by thermally treating the solid-state imaging device at or higher than 400°C, hydrogen atoms in the USG film and having the passivation film discharged and bonded with dangling bonds on the surface of the Si semiconductor substrate surface, the dark current is reduced. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供能够充分降低暗电流的固态成像装置，并提供其制造方法。 解决方案：固态成像装置通过连续地层叠光电二极管，用于读取或转移存储在光电二极管中的电荷的栅极电极层，形成由SiO 2 SBB组成的第一层间绝缘膜， 第一金属布线层，由SiO SiO 2构成的第二层间绝缘膜，第二金属布线层，含有氢的USG膜和在Si半导体的表面上含有氢的钝化膜 基质。 此外，通过热处理400℃以上的固态成像装置，USG膜中的氢原子并且钝化膜在Si半导体衬底表面的表面上以悬挂键排出并结合，暗电流为 降低。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JPH10260297A

公开(公告)日：1998-09-29

申请号：JP6772297

申请日：1997-03-21

Applicant: TOSHIBA CORP ,  TOSHIBA ENG & CONSTR

Inventor： TODA MASAMI ,  SAKURAI JIRO ,  SAKAI HITOSHI ,  SASAKI OSAMU

IPC: G21F9/28

Abstract: PROBLEM TO BE SOLVED: To impart the versatility to every sort and kind of shapes of radioactive metal wastes to a device, reduce the detention of an evolved gas near electrodes and the metal wastes and improve the handleability of them. SOLUTION: An electrolytic cell 1 is filled with an electrolyte 2, and a globule-filled container 3 filled with numerous globules 4 is placed in the cell 1. A plate anode 5 is buried in the numerous globules 4, on which a plate metal waste 7 is put. A plate cathode 9 is placed above the plate metal waste 7, and the plate anode 5 and the plate cathode 9 are connected to a direct-current power supply 8 through feeders 6a and 6b. The application of a direct current between the plate cathode 9 and the plate anode 5 from the direct-current power supply 8 allows a current to pass through the metal waste 7 by way of the globules 4 and dissolve the upper surface of it, enabling an electrolytic decontamination.

公开(公告)号：JPH06224956A

公开(公告)日：1994-08-12

申请号：JP1018693

申请日：1993-01-25

Applicant: TOSHIBA CORP

Inventor： SASAKI OSAMU

IPC: H04B1/04 ,  H04L27/20 ,  H04L27/36

Abstract: PURPOSE:To reduce the equipment cost by providing an object value generating means, a variable oscillation control means, a variable amplitude control means and a phase feedback control means in the equipment to control the variable amplitude control means corresponding to an amplitude object level and an amplitude error. CONSTITUTION:An analog phase object signal outputted from an object generating circuit 41, an output of a 1st detector 48, an output of a 2nd detector 52 and an output of a down-convert mixer 50 are fed to a phase comparator 49. The comparator generates a phase error signal from the signals and gives the signal to a VCO 42 via a VCO control circuit 53. A voltage controlled attenuator 43 is provided between the VCO 42 and a power amplifier 45 to extract part of an output of the amplifier 45. Thus, the circuit 41 applies negative feedback control to an oscillated frequency of the VCO 42 and an attenuation factor of the attenuator 43 based on a phase object and an amplitude object corresponding to an instantaneous phase and amplitude generated by the polar coordinate conversion system. Since the negative feedback is applied to the phase and amplitude, a nonlinear and efficient amplifier such as a class C amplifier is adopted for the amplifier 45.

公开(公告)号：JPH0627673A

公开(公告)日：1994-02-04

申请号：JP5275793

申请日：1993-03-12

Applicant: TOSHIBA CORP

Inventor： NAITO TAKUYA ,  SASAKI OSAMU ,  KIHARA NAOKO ,  SHIROUCHI TAKASHI ,  GOKOCHI TORU ,  SAITO SATOSHI ,  NIKI HIROICHI ,  TADA TSUKASA

IPC: G03F7/11 ,  G03F7/30 ,  G03F7/38 ,  H01L21/027

Abstract: PURPOSE:To improve definition by decreasing defects of shapes, such as skirting and galling, of resist patterns. CONSTITUTION:A protective layer 12 which can suppress the diffusion of the contaminants from a substrate 11 is formed on this substrate and a resist layer 13 consisting of a chemical amplification type resist is formed on this protective layer 12. In succession, prescribed regions 14 of the resist layer 13 are selectively exposed and are further baked at a prescribed temp., by which a latent image 16 is formed. The resist layer 13 after the baking is subjected to development processing to selectively remove the exposed regions 14, by which the resist patterns 17 are formed.

公开(公告)号：JPH05134415A

公开(公告)日：1993-05-28

申请号：JP34468691

申请日：1991-12-26

Applicant: TOSHIBA CORP

Inventor： KIHARA NAOKO ,  YUASA FUMIHIKO ,  GOKOCHI TORU ,  TADA TSUKASA ,  SAITO SATOSHI ,  NAITO TAKUYA ,  SASAKI OSAMU

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To provide a photosensitive compsn. for exposure with short wavelength UV rays or ionized radiation, having excellent durability against dry etching, with large allowance for exposure and development with alkali soln. and fine patterns having good cross-sectional shape can be formed. CONSTITUTION:This compsn. contains an alkali-soluble polymer having 3000-80000 average mol.wt. and >=150 deg.C softening point, a compd. which produces acid by irradiation of chemical radiation, and a compd. having substituent which decomposes with one kind of acid and gives -COO or -SO3 in an alkali soln. Thereby, the irradiated part with chemical radiation is selectively dissolved and removed by an alkali developer and high resolution positive patterns can be formed.

公开(公告)号：JPH0558018A

公开(公告)日：1993-03-09

申请号：JP21993091

申请日：1991-08-30

Applicant: TOSHIBA CORP

Inventor： SHIMIZU SEISABURO ,  YOSHIZUMI AKIRA ,  SASAKI OSAMU

IPC: B41B7/00 ,  B41M5/00

Abstract: PURPOSE:To provide a transfer method for a metal pattern by which a metal pattern 5 of a character or design, which is superior in wear resistance, and at the cut part of which a beard shaped cut part does not generate, and which has a metal luster being superior in appearance, can be formed on a member-to- be-printed 4 made of a thermoplastic resin. CONSTITUTION:A transfer original plate 2 being equipped with a protruding pattern 1, which has the same shape as the pattern for a character or design to be formed, has a height being the same with the thickness of a metal foil 3 becoming a pattern or more, and at the same time, is made of a flat surface or curved surface being in contact with the metal foil, and sides surfaces being different from this surface, is prepared, and by heat-pressing the protruding pattern 1 of the transfer original plate 2, on a member-to-be-printed 4 made of a thermoplastic resin, while placing the metal foil 3 in-between, the metal foil 3 part with which the protruding pattern 1 has come into contact is transferred on the surface of the member-to-be-printed 4, for the process to form the pattern 5 of a character or design.

公开(公告)号：JPH01237943A

公开(公告)日：1989-09-22

申请号：JP6319988

申请日：1988-03-18

Applicant: TOSHIBA CORP

Inventor： SASAKI OSAMU ,  SHIMIZU SEISABURO ,  MATAKE SHIGERU ,  MATSUMARU SUKEAKI ,  KOIZUMI TAKASHI

IPC: G11B7/26 ,  G11B7/24

Abstract: PURPOSE:To mold an optical disk having pregrooves (PG) and prebits (PB) with high accuracy by forming 2nd thin films to the positions corresponding to the PG on the thin film on a substrate and providing thin films in the positions corresponding to the PB between both the thin films. CONSTITUTION:A sputtered gold film 12 (the 1st thin film 2), a sputtered Ni film 13 (2nd thin film 3) and a negative type photoresist film 14 are successively formed on the surface of the copper substrate 11. The substrate 11 is rotated and a recording head 15 is formed in a radial direction, then focused laser light is projected thereto to spirally form latent images 16 of the PG. After the unexposed part is removed by developing the film 14, the film 13 is selectively etched away and the thin films 3 are formed to the positions corresponding to the PG. The exposed part of the film 14 is dissolved away and thereafter, the positive type photoresist film 17 is formed thereon. Latent images 18 of address information are then formed to the positions corresponding to the PB by a head 15 while the thin films 3 are tracked. After the exposed part is removed by developing the film 17, the thin film layer 4 consisting of an Ni plating film is provided to the positions corresponding to the PB and the film 17 is dissolved away.

公开(公告)号：JPH01232552A

公开(公告)日：1989-09-18

申请号：JP5769288

申请日：1988-03-11

Applicant: TOSHIBA CORP

Inventor： SHIMIZU SEISABURO ,  MATAKE SHIGERU ,  SASAKI OSAMU ,  MATSUMARU SUKEAKI

IPC: G11B7/257 ,  G11B7/24 ,  G11B7/26 ,  G11B11/10 ,  G11B11/105

Abstract: PURPOSE:To prevent wrinkling and cracking of a recording layer, etc., by using a thermosetting vinyl group-contg. silicone resin to form a resin layer of the substrate constituted by transferring rugged shapes such as guide grooves or pits to the resin layer provided on a transparent substrate. CONSTITUTION:The vinyl group-contg. silicone resin is coated on the glass substrate and is dried. A stamper formed with the guide grooves is then brought into pressurized contact with the surface of the coating and is heated to cure the silicone resin; thereafter, the stamper is stripped and the optical disk substrate is obtd. An underlying layer, the recording film and a reflecting film are successively laminated thereon. The good recording characteristics are thereby maintained without generating the wrinkles and cracks in the recording film over a long period of time.

公开(公告)号：JPH01213845A

公开(公告)日：1989-08-28

申请号：JP3851488

申请日：1988-02-23

Applicant: TOSHIBA CORP

Inventor： SASAKI OSAMU ,  SHIMIZU SEISABURO

IPC: G02B1/04 ,  G11B7/24 ,  G11B7/26 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To improve the adhesiveness of a glass disk and positive type photoresist by specifying a silane coupling agent. CONSTITUTION:A photoresist layer 103 is formed via a thin film layer 102 of the silane coupling agent on the surface of the glass disk 101. This silane coupling agent is used by being selected from the following agents: N(beta- aminoethyl)-gamma aminopropylmethoxysilane,N(beta-aminoethyl-)-gamma aminopropylmetho xysilane,gamma chloropropyltrimethoxysilane,gamma -chloropropylmethyldiethoxysilane,gamma -chl oropropylmethyldichlorosilane. The positive type photoresist layer 103 essentially consisting of a phenol novolak resin is formed on the thin film layer 102.