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    Display device and method of manufacturing the same
    2.
    发明专利
    Display device and method of manufacturing the same 审中-公开
    显示装置及其制造方法

    公开(公告)号：JP2014067522A

    公开(公告)日：2014-04-17

    申请号：JP2012210697

    申请日：2012-09-25

    Applicant: Toshiba Corp ,  株式会社東芝

    Inventor： MIURA KENTARO ,  UEDA TOMOMASA ,  SAITO NOBUMI ,  NAKANO SHINTARO ,  SAKANO TATSUNORI ,  YAMAGUCHI HAJIME

    IPC: H05B33/10 ,  H01L51/50 ,  H05B33/12

    CPC classification number: H01L33/08 ,  H01L27/1225 ,  H01L27/3244 ,  H01L51/0024 ,  H01L51/5253

    Abstract: PROBLEM TO BE SOLVED: To provide a display device having a high reliability.SOLUTION: In a method of manufacturing a display device according to an embodiment, a second substrate part having a second substrate and an anode provided on the second substrate is caused to face a first substrate part having a first substrate, an n-channel type thin-film transistor provided on the first substrate, and a cathode connected to the thin-film transistor via an intermediate layer. The second substrate part is joined to the first substrate part while the intermediate layer is interposed between the anode and the cathode.

    Abstract translation: 要解决的问题：提供一种具有高可靠性的显示装置。解决方案：在根据一个实施例的显示装置的制造方法中，将具有设置在第二基板上的第二基板和阳极的第二基板部分面向 具有第一基板，设置在第一基板上的n沟道型薄膜晶体管和经由中间层与薄膜晶体管连接的阴极的第一基板部分。 第二基板部分连接到第一基板部分，而中间层插入在阳极和阴极之间。

    Display device
    3.
    发明专利
    Display device 有权
    显示设备

    公开(公告)号：JP2013057950A

    公开(公告)日：2013-03-28

    申请号：JP2012231373

    申请日：2012-10-19

    Applicant: Toshiba Corp ,  株式会社東芝

    Inventor： SAITO NOBUMI ,  UEDA TOMOMASA ,  NAKANO SHINTARO ,  UCHIKOGA SHUICHI

    IPC: G09F9/30 ,  G02F1/1343 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786 ,  H01L51/50 ,  H05B33/12 ,  H05B33/22 ,  H05B33/28

    Abstract: PROBLEM TO BE SOLVED: To provide a display device using an oxide semiconductor whose characteristic variation due to a heat treatment is suppressed.SOLUTION: There are provided a thin-film transistor comprising: an insulating layer; a gate electrode on the insulating layer; a semiconductor layer which is disposed on the gate electrode through a gate insulating layer and is formed by an oxide layer; and a source electrode and a drain electrode which are disposed on the semiconductor layer apart from each other across the gate electrode, and a display device comprising: a pixel electrode having an electric resistance lower than that of the semiconductor layer which are connected to any one of the source electrode and the drain electrode and are formed by the oxide layer; an optical element which causes at least either a change in optical characteristics or light emission by an electric signal supplied to the pixel electrode; and a film disposed below the pixel electrode and is formed by the same material as the gate insulating layer, wherein the surface on the side of the semiconductor layer of the gate insulating film on the gate electrode has higher smoothness than the surface on the side of the pixel electrode of a film disposed below the pixel electrode.

    Abstract translation: 要解决的问题：提供一种使用氧化物半导体的显示装置，其中抑制了由于热处理引起的特性变化。 提供了一种薄膜晶体管，包括：绝缘层; 绝缘层上的栅电极; 半导体层，其通过栅极绝缘层设置在栅电极上并由氧化物层形成; 以及源极电极和漏电极，其设置在跨越所述栅电极的所述半导体层上，并且显示装置包括：像素电极，其电阻比所述半导体层的电阻低， 的源电极和漏极，并由氧化物层形成; 光学元件，其通过提供给像素电极的电信号至少引起光学特性或发光的变化; 以及设置在像素电极下方并由与栅极绝缘层相同的材料形成的膜，其中栅极电极上的栅极绝缘膜的半导体层侧的表面具有比在栅电极侧的表面更高的平滑度 设置在像素电极下方的膜的像素电极。 版权所有（C）2013，JPO＆INPIT

    Display device and method of driving the same
    4.
    发明专利
    Display device and method of driving the same 有权
    显示装置及其驱动方法

    公开(公告)号：JP2010078922A

    公开(公告)日：2010-04-08

    申请号：JP2008247258

    申请日：2008-09-26

    Applicant: Toshiba Corp ,  株式会社東芝

    Inventor： SAITO NOBUYOSHI ,  UEDA TOMOMASA ,  HARA YUJIRO

    IPC: G09G3/30 ,  G09G3/20 ,  H01L51/50

    CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/043 ,  H01L51/001 ,  H01L51/0011 ,  H01L51/56

    Abstract: PROBLEM TO BE SOLVED: To maintain excellent display performance for a long period of time by improving accuracy of compensating a threshold voltage shift of a driving transistor controlling a current supplied to a current drive type self-light emitting element. SOLUTION: A display device includes: a driving transistor Dr having a drain connected to a light emitting element 11 and a source connected to a power supply line NL; a capacitor Ck having one end connected to a gate of the driving transistor Dr; a threshold voltage detecting transistor Det connected between the drain of the driving transistor Dr and the other end of the capacitor Ck; and a reset transistor Rst connected between the source and gate of the driving transistor Dr. The gate of the driving transistor Dr is charged up to a predetermined value through the reset transistor Rst, and electric charge at the other end of the capacitor Ck is discharged through the threshold voltage detecting transistor Det, so that the potential difference across the capacitor Ck is held at the threshold voltage of the driving transistor Dr. COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题：通过提高控制提供给当前驱动型自发光元件的电流的驱动晶体管的阈值电压偏移的精度来长时间保持优异的显示性能。 解决方案：显示装置包括：具有连接到发光元件11的漏极和连接到电源线NL的源极的驱动晶体管Dr; 电容器Ck，其一端连接到驱动晶体管Dr的栅极; 连接在驱动晶体管Dr的漏极和电容器Ck的另一端之间的阈值电压检测晶体管Det; 以及连接在驱动晶体管Dr的源极和栅极之间的复位晶体管Rst。驱动晶体管Dr的栅极通过复位晶体管Rst被充电至预定值，并且电容器Ck另一端的电荷被放电 通过阈值电压检测晶体管Det，使得电容器Ck两端的电位差保持在驱动晶体管的阈值电压下。（C）2010，JPO＆INPIT

    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    6.
    发明专利
    MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 审中-公开

    公开(公告)号：JP2008186861A

    公开(公告)日：2008-08-14

    申请号：JP2007016930

    申请日：2007-01-26

    Applicant: TOSHIBA CORP

    Inventor： UEDA TOMOMASA ,  AIKAWA HISANORI ,  YOSHIKAWA MASATOSHI ,  SHIMOMURA NAOHARU ,  NAKAYAMA MASAHIKO ,  IKEGAWA SUMIO ,  HOSOYA KEIJI ,  NAGAMINE MAKOTO

    IPC: H01L43/08 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/10

    Abstract: PROBLEM TO BE SOLVED: To enable further reducing an inverse current in magnetization inversion. SOLUTION: This magnetoresistive element is provided with: a magnetization free layer 10 having a first face and a second face opposite to the first face and having variable magnetization direction; a magnetization fixing layer 6 provided on the first face side in the first and second faces of the magnetization free layer and having fixed magnetization direction; a first tunnel barrier layer 8 provided between the magnetization free layer and the magnetization fixing layer; a second tunnel barrier layer 12 provided on the second face of the magnetization free layer; and a non-magnetization layer 14 provided so as to contact the face opposite to the magnetization free layer of the second tunnel barrier layer. The magnetization direction of the magnetization free layer can be varied based on conduction between the magnetization free layer and the non-magnetization layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is within a range of 1:0.25 to 1:4. COPYRIGHT: (C)2008,JPO&INPIT

    Magnetic memory
    7.
    发明专利
    Magnetic memory 有权
    磁记忆

    公开(公告)号：JP2006066485A

    公开(公告)日：2006-03-09

    申请号：JP2004244771

    申请日：2004-08-25

    Applicant: Toshiba Corp ,  株式会社東芝

    Inventor： YODA HIROAKI ,  AIKAWA HISANORI ,  UEDA TOMOMASA ,  KISHI TATSUYA ,  KAJIYAMA TAKESHI ,  ASAO YOSHIAKI

    IPC: H01L27/105 ,  H01L21/8246 ,  H01L43/08

    Abstract: PROBLEM TO BE SOLVED: To provide a magnetic memory which enables turning into a large capacity and high-speed writing.
    SOLUTION: The magnetic memory includes a memory cell which comprises a magnetic recording layer 4 whose direction of magnetization changes according to external magnetic field, a magnetization fitted layer 8 in which direction of magnetization is fixed, a storage element 2 comprising a nonmagnetic intermediate layer 6 provided between the magnetic recording layer and the magnetization fixed layer, a writing wiring 20 which is provided on the side opposite to the nonmagnetic intermediate layer of the magnetic recording layer and in which a writing current flows, and a yoke 25 provided to contact the surface of the writing wiring such as on a side opposite to the magnetic record layer. A pair of facing side surfaces of the storage element are set on the same plane with respective pair of facing side surfaces of the writing wiring and yoke, with a 5 or larger for the non-permeability of the magnetic recording layer.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种能够变成大容量和高速写入的磁存储器。 解决方案：磁存储器包括存储单元，该存储单元包括其磁化方向根据外部磁场而变化的磁记录层4，磁化方向固定的磁化嵌合层8，包含非磁性的存储元件2 设置在磁记录层和磁化固定层之间的中间层6，设置在与磁记录层的非磁性中间层相反的一侧并且写入电流流动的一侧的写入布线20以及设置在 接触写入配线的表面，例如与磁记录层相对的一侧。 存储元件的一对相对的侧表面与写入布线和磁轭的相应的一对相对的侧表面设置在同一平面上，对于磁记录层的非磁导率设置为5或更大。 版权所有（C）2006，JPO＆NCIPI

    Magnetic random access memory
    8.
    发明专利
    Magnetic random access memory 有权

    公开(公告)号：JP2004296869A

    公开(公告)日：2004-10-21

    申请号：JP2003088413

    申请日：2003-03-27

    Applicant: Toshiba Corp ,  株式会社東芝

    Inventor： ASAO YOSHIAKI ,  YODA HIROAKI ,  AMANO MINORU ,  UEDA TOMOMASA

    IPC: G11C11/15 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/22 ,  H01L29/76 ,  H01L43/08

    CPC classification number: H01L43/08 ,  B82Y10/00 ,  H01L27/228

    Abstract: PROBLEM TO BE SOLVED: To provide a magnetic random access memory with a reduced write current and an enhanced write efficiency by making a write magnetic field strength applied to a center of a free layer of an MTJ element with a tunnel magneto-resistive effect equal to that applied to an end of the free layer so as to suppress the reduction in the write efficiency due to an inverted magnetic field. SOLUTION: In the magnetic random access memory wherein information is written by supplying a current to a write wire WWL closely located to the MTJ element to produce an induced magnetic flux thereby changing a magnetization direction of the free layer of the MTJ element comprising two magnetic layers sandwiching a nonmagnetic layer, wherein the resistance of the MTJ element changing depending on a state of the orientation of magnetization of the two magnetic layers of the MTJ element corresponds to a '0'/'1' level of storage information, the MTJ element is bent so as to be almost coincident with a curve indicated by a magnetic field produced from the write wire. COPYRIGHT: (C)2005,JPO&NCIPI

    Magnetic random access memory
    9.
    发明专利
    Magnetic random access memory 有权
    磁性随机存取存储器

    公开(公告)号：JP2003318366A

    公开(公告)日：2003-11-07

    申请号：JP2002118215

    申请日：2002-04-19

    Applicant: Toshiba Corp ,  株式会社東芝

    Inventor： ASAO YOSHIAKI ,  IWATA YOSHIHISA ,  SAITO YOSHIAKI ,  YODA HIROAKI ,  UEDA TOMOMASA ,  AMANO MINORU ,  TAKAHASHI SHIGEKI ,  KISHI TATSUYA

    IPC: H01L27/105 ,  H01L21/8246 ,  H01L43/08

    Abstract: PROBLEM TO BE SOLVED: To allow a write magnetic field to efficiently work on a TMR element of an MRAM. SOLUTION: Immediately under the TMR element 23, a write word line 20B is disposed. The write word line 20B is extended in an X direction, and side faces and the bottom face of the write word line 20B are covered with a yoke material 25B having high magnetic permeability. The yoke material 25B sinks below the top face of the write word line 20B. Immediately above the TMR element 23, a data selection line (read/write bit line) 24 is disposed. The data selection line 24 is extended in a Y direction which crosses the X direction. The top face of the data selection line 24 is covered with a yoke material 27 having high magnetic permeability. COPYRIGHT: (C)2004,JPO

    Abstract translation: 要解决的问题：允许写入磁场有效地工作在MRAM的TMR元件上。 解决方案：立即在TMR元件23下方设置写字线20B。 写字线20B在X方向上延伸，并且写字线20B的侧面和底面被具有高磁导率的磁轭材料25B覆盖。 磁轭材料25B下沉到写字线20B的顶面之下。 在TMR元件23的正上方，布置有数据选择线（读/写位线）24。 数据选择线24在与X方向交叉的Y方向上延伸。 数据选择线24的顶面被具有高磁导率的磁轭材料27覆盖。 版权所有（C）2004，JPO

    Magneto-resistance effect element and magnetic memory
    10.
    发明专利
    Magneto-resistance effect element and magnetic memory 有权
    磁阻效应元件和磁记忆

    公开(公告)号：JP2003298146A

    公开(公告)日：2003-10-17

    申请号：JP2002097759

    申请日：2002-03-29

    Applicant: Toshiba Corp ,  株式会社東芝

    Inventor： KISHI TATSUYA ,  SAITO YOSHIAKI ,  AMANO MINORU ,  TAKAHASHI SHIGEKI ,  NISHIYAMA KATSUYA ,  UEDA TOMOMASA

    IPC: G11C11/15 ,  G11C11/56 ,  H01L43/08

    CPC classification number: G11C11/15 ,  G11C11/5607

    Abstract: PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element in which, even when an area is reduced, a residual magnetization of a free ferromagnetic layer is sufficiently large, and which can be subjected to a flux reversal by a sufficiently weak magnetic field.
    SOLUTION: In the magneto-resistance effect element, a free ferromagnetic layer 4 contains, in shape, a quadrilateral-shaped first part 4a which comprises first opposite sides in parallel with each other and second opposite sides in parallel with each other, and a pair of second parts 4b which extends from a pair of diagonal parts of the first part 4a to a direction parallel to the second opposite side, and in which a maximum width in a direction parallel to the first opposite side is narrower than a length of the first opposite side. Further, the shape of free ferromagnetic layer 4 is asymmetrical in terms of a straight line passing a center of the first part 4a and parallel to the second opposite side. An easy-to-magnetize axis of the free ferromagnetic layer 4 is in parallel with a first direction 41 almost parallel to the second opposite side, a second direction 42 almost parallel to a longest line of lines coupling one contour of the second part 4b to the other contour thereof, or a direction on an acute angle side which exists between the first direction 41 and the second direction 42, and is made by these directions.
    COPYRIGHT: (C)2004,JPO

    Abstract translation: 解决的问题：提供一种磁阻效应元件，其中即使当面积减小时，自由铁磁层的剩余磁化强度足够大，并且可以充分地进行磁通反转 弱磁场。 解决方案：在磁阻效应元件中，自由铁磁层4的形状包含四边形形状的第一部分4a，其包括彼此平行的第一相对侧和彼此平行的第二相对侧， 以及从第一部分4a的一对对角部分延伸到与第二相对侧平行的方向的一对第二部分4b，其中平行于第一相对侧的方向上的最大宽度比长度 的第一个对面。 此外，游离铁磁层4的形状在通过第一部分4a的中心并平行于第二相对侧的直线方面是不对称的。 自由铁磁层4的易磁化轴线与几乎平行于第二相对侧的第一方向41平行，第二方向42几乎平行于将第二部分4b的一个轮廓耦合到最长线的线 其另一轮廓，或在第一方向41和第二方向42之间的锐角侧的方向，并且由这些方向制成。 版权所有（C）2004，JPO

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