Abstract:
PROBLEM TO BE SOLVED: To provide (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium which can be suitably used for producing ruthenium-containing thin film even if containing a compound having a resembling structure, a method for producing the same, a method for producing the ruthenium-containing thin film by using the same, etc. SOLUTION: This ruthenium-containing thin film is produced by using the (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing ≤5 wt.% compound having the resembling structure as a raw material, which is obtained by separating the compound having the resembling structure from the (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium containing the compound having the resembling structure. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a new compound having good vaporization characteristics, and being a raw material for producing a metal ruthenium thin film by a CVD method or an ALD method under a condition in a non-oxidizing atmosphere free from an oxidative reactant such as oxygen, to provide a method for producing the compound, a ruthenium-containing thin film produced by using the compound, and a method for producing the thin film. SOLUTION: The ruthenium-containing thin film is produced by producing the ruthenium compound represented by general formula (1), for example, by the reaction or the like of di-μ-chloro-bis[chloro(η 6 -arene)ruthenium] with 1,3-cyclohexadienes, and using the compound as a raw material. In the formula, R 1 and R 2 are each independently a hydrogen atom or a 1-6C alkyl group; with the proviso that when R 2 is a hydrogen atom, R 1 is not the hydrogen atom or a methyl group. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a thin film of metal oxide based on strontium iridium oxide (SrIrO 3 ), in particular, perovskite type SrIrO 3 . SOLUTION: The method for manufacturing a thin film of metal oxide based on SrIrO 3 , in particular, SrIrO 3 of the perovskite type structure on a surface of a base material 3, in particular, on a surface of the base material 3 forming (1 0 0) face or (1 1 0) face of cubic system, tetragonal system, rhombic system by an organic metal chemical vapor deposition method using raw material gas containing organic strontium (Sr) compound 11 and organic iridium (Ir) compound 12, is provided. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To obtain a tantalum compound that has reactivity to water lower than that of a conventional tantalum compound and forms a tantalum-containing thin film by a CVD method and to provide a method for producing the same and a method for forming a tantalum-containing thin film using the compound. SOLUTION: The tantalum compound represented by formula 1 (R 1 is a 1-3C alkyl; R 2 is a 1-5C alkyl or a 3C or 4C trialkylsilyl; R 3 is a 1-3C alkyl; R 4 is methyl or ethyl; m is an integer of 0-5; n is an integer of 0-3; m+n is a number of ≤5) is obtained by reacting a tantalum compound represented by formula 2 with a cyclopentadiene derivative represented by general formula 3. The tantalum-containing thin film is obtained by using the compound as a raw material. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation:要解决的问题:为了获得与常规钽化合物具有低于水的反应性的钽化合物并通过CVD法形成含钽薄膜并提供其制造方法和方法 用于使用该化合物形成含钽薄膜。 解决方案:由式1表示的钽化合物(R 1 SP>是1-3C烷基; R 2 SP 2是1-5C烷基或3C或4C三烷基甲硅烷基 R 3是1-3C烷基; R 4是甲基或乙基; m是0-5的整数; n是0-3的整数; m + n是≤5的数)是通过使由式2表示的钽化合物与由通式3表示的环戊二烯衍生物反应而获得的。含钽薄膜是通过使用该化合物作为原料而获得的。 版权所有(C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a stable zero-valent ruthenium complex produceable in a mild condition, and expected as a catalyst for reduction, organic synthesis and organic polymerization, and to provide a method for producing the complex. SOLUTION: The zero-valent ruthenium complex represented by formula 1: RuL 1 L 2 (CO) 1 [wherein, L 1 is a linear diene; and L 2 is a linear diene or a cyclic diene] (with the proviso that the compound in which L 1 and L 2 are the same is omitted) is obtained by reacting a ruthenium complex represented by formula 3: RuL 1 2 (CO) 3 [wherein, L 1 is a linear diene] with L 2 [L 2 is a linear diene or a cyclic diene, with the proviso that L 1 and L 2 are not the same] in an organic solvent to exchange one of the ligand L 1 of the complex represented by formula 3 with L 2 . COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a ruthenium complex expected as a catalyst for organic synthesis and organic polymerization, and to provide a method for producing the complex. SOLUTION: The zero-valent ruthenium complex represented by formula 1: RuL 1 L 2 A(CO) [wherein, L 1 is a linear diene; L 2 is a phosphine or a diphosphine; and A is 2 when L 2 is the phosphine, and A is 1 when L 2 is the diphosphine] is produced by reacting a ruthenium complex represented by formula 5: RuL 1 2 (CO) [wherein, L 1 is the same as the above] with AL 2 [wherein L 2 and A are the same as the above] in an organic solvent to exchange one of the ligand L 1 of the complex represented by formula 5 with L 2 . COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide an optical recording medium, having high reliability, in which uniform signal recording and reproduction are obtained and crashing between the medium and an optical head hardly occurs. SOLUTION: The optical recording medium has a reflecting layer and a recording layer, laminated in this order on a substrate, having a header and lands/grooves and is used for recording and reproduction with a floating type optical head. When the effective numerical aperture of the optical head to be used is NA, the wavelength of the laser light to be used is λ, the depth from the surface of the medium at the maximum height to the center line of the header is Rph, and the depth from the surface at the maximum height to the center line of the lands/grooves is Rpd in any length along the radius in the recording and reproducing region, a relation of, for example, |Rpd (maximum)-Rph (minimum)|
Abstract:
PROBLEM TO BE SOLVED: To provide a near-field magneto-optical recording medium which maintains high surface cleanliness by preventing adhesion of foreign matter generated in a recording and reproducing region due to repetitive use and has high durability and reliability. SOLUTION: In the magneto-optical recording medium which is constituted by laminating at least a reflecting layer, a recording layer, a dielectrics layer and a solid lubricating layer on a substrate in this order, has a hub for rotating the substrate at a central part of the substrate and executes recording and reproducing by a floating head, a groove is formed in at least one among an outer region than the recording and reproducing region and the region being an outside of a hub attaching region and an inside of the recording and reproducing region on the substrate surface.
Abstract:
PROBLEM TO BE SOLVED: To provide a near field magneto-optical recording medium having high durability and reliability in which fracture in a recording and reproducing thin film in the recording and reproducing region due to impact added to the recording medium is prevented. SOLUTION: In the magneto-optical recording medium having at least a reflection layer, recovering layer, dielectric layer and solid lubricant layer successively formed in this order on a substrate to perform recording and reproducing by using a floating type head, at least one layer of the thin films formed on the substrate has a notch formed in the region outside of the recording and reproducing region.
Abstract:
PROBLEM TO BE SOLVED: To provide a near-field magneto-optical recording medium excellent in durability and reliability, which keeps the floating stability of a head floating above the near-field magneto-optical medium and in which recording and reproducing signals with little noise can be obtained. SOLUTION: In the near-field magneto-optical recording medium produced by successively forming at least a reflection layer, a recording layer, a dielectric layer and a solid lubricant layer in this order on a substrate and to be used for recording and reproducing with a floating head, the center line average roughness Ra of the land and/or groove formed in the recording medium is controlled to the range of 0.2 nm