公开(公告)号：US20170174560A1

公开(公告)日：2017-06-22

申请号：US15118368

申请日：2015-02-16

Applicant: TOSOH CORPORATION

Inventor： Satori HIRAI ,  Nobusuke YAMADA ,  Kazuyoshi ARAI

IPC: C03C11/00 ,  C03B19/08 ,  C03B19/06

CPC classification number: C03C11/00 ,  C03B19/066 ,  C03B19/08 ,  C03B2201/03 ,  C03C3/06 ,  C03C2201/02 ,  C03C2201/80 ,  C03C2204/06

Abstract: To provide opaque quartz glass having no water absorbing properties and being excellent in infrared light shielding properties, and a method for its production. In the production of opaque quartz glass of the present invention, a fine amorphous silica powder and a pore forming agent are mixed, then molded and heated at a predetermined temperature, to obtain opaque quartz glass wherein contained pores are closed pores, the average pore size of pores is from 5 to 20 μm, and the content density of pores is high, whereby the heat shielding properties are high.

公开(公告)号：US20220332623A1

公开(公告)日：2022-10-20

申请号：US17722660

申请日：2022-04-18

Applicant: TOSOH CORPORATION

Inventor： Masahiro ITO ,  Kazuyoshi ARAI

IPC: C03B5/225 ,  C03C3/062

Abstract: A glass comprising at least one oxide of Si and a di- or higher-valent metal element, the glass containing no bubbles with diameters of more than 0.1 mm, wherein an occupied area fraction of bubbles with diameters of 0.1 mm or less is 0.05% or less. A. semiconductor production apparatus and a liquid crystal production apparatus comprising a glass member comprising this glass. A method for producing a glass, comprising the steps of (1) placing raw material powders for at least one oxide of Si and a di- or higher-valent metal element in a container, mixing the raw material powders together and then melting the mixture by heating under reduced pressure to obtain a melt; (2-1) pressurizing the melt in a He gas atmosphere, or (2-2) heating the melt in an inert gas atmosphere other than a He gas atmosphere and then pressurizing the melt in the inert gas atmosphere; and (3) cooling the melt.