公开(公告)号：DE60130588D1

公开(公告)日：2007-10-31

申请号：DE60130588

申请日：2001-12-28

Applicant: TOYO TANSO CO

Inventor： FUKUNAGA OSAMU ,  OKUBO HIROSHI ,  SOGABE TOSHIAKI ,  TOJO TETSURO

IPC: C01B31/06 ,  B01J3/06 ,  B30B11/00 ,  C04B35/52 ,  C04B35/528 ,  C04B35/645

公开(公告)号：DE60130588T2

公开(公告)日：2008-06-12

申请号：DE60130588

申请日：2001-12-28

Applicant: TOYO TANSO CO

Inventor： FUKUNAGA OSAMU ,  OKUBO HIROSHI ,  SOGABE TOSHIAKI ,  TOJO TETSURO

IPC: C01B31/06 ,  B01J3/06 ,  B30B11/00 ,  C04B35/52 ,  C04B35/528 ,  C04B35/645

公开(公告)号：EP1460040A4

公开(公告)日：2005-06-08

申请号：EP01995048

申请日：2001-12-28

Applicant: TOYO TANSO CO

Inventor： FUKUNAGA OSAMU ,  OKUBO HIROSHI ,  SOGABE TOSHIAKI ,  TOJO TETSURO

IPC: B01J3/06 ,  B30B11/00 ,  C01B31/06 ,  C04B35/52 ,  C04B35/528 ,  C04B35/645

CPC classification number: C04B35/645 ,  B01J3/062 ,  B01J3/065 ,  B01J3/067 ,  B01J2203/061 ,  B01J2203/0655 ,  B30B11/004 ,  B30B11/007 ,  C04B35/52 ,  C04B35/522 ,  C04B2235/421 ,  C04B2235/425 ,  C04B2235/427 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9607

Abstract: A method for producing a semiconductor diamond containing boron by the high pressure synthesis method, wherein a graphite material to be converted to the semiconductor diamond is mixed with boron or a boron compound, formed and fired, in such a way that the resultant graphite material contains a boron component uniformly dispersed therein and has an enhanced bulk density, a high purity and a reduced content of hydrogen.

Abstract translation: 通过高压合成法制造含有硼的半导体金刚石的方法，其中将要转化为半导体金刚石的石墨材料与形成和烧制的硼或硼化合物混合，使得所得石墨材料含有 硼成分均匀地分散在其中并且具有增强的堆积密度，高纯度和降低的氢含量。

公开(公告)号：JP2002018267A

公开(公告)日：2002-01-22

申请号：JP2000201997

申请日：2000-07-04

Applicant: TOYO TANSO CO

Inventor： FUKUNAGA OSAMU ,  OKUBO HIROSHI ,  SOGABE TOSHIAKI ,  TOJO TETSURO

IPC: B01J3/06 ,  B30B11/00 ,  C01B31/06 ,  C04B35/52 ,  C04B35/528 ,  C04B35/645

Abstract: PROBLEM TO BE SOLVED: To obtain a graphite material for synthesizing semiconductor diamond, capable of manufacturing semiconductor diamond, which contains boron or a boron compound in a uniformly distributed state, at a high yield. SOLUTION: When semiconductor diamond containing boron is manufactured by a high pressure synthesizing method, boron or the boron compound is homogenously added to the graphite material to be converted into the semiconductor diamond and the whole is densified and highly purified to reduce hydrogen content.

公开(公告)号：JPH08217429A

公开(公告)日：1996-08-27

申请号：JP6852395

申请日：1995-02-17

Applicant: TOYO TANSO CO

Inventor： MIHAIRU KOZUROFU ,  HIRABAYASHI MASAYUKI ,  TOKUMOTO MADOKA ,  FUKUNAGA OSAMU ,  KURODA KOJI

IPC: B01J3/06 ,  C01B31/02

Abstract: PURPOSE: To obtain hard carbon optimum for a part material required of high hardness, e.g., cutting tools, digging tools or a sliding part material, further having electroconductivity. CONSTITUTION: This hard carbon is a mixture of an amorphous carbon and a diamond-resembled structure having >=2000kgf/mm Vickers hardness and 1×10 -1×10 Ω.cm electric resistance (at room temperature). This material is obtained by using a carbon cluster such as fullerenes as a raw material and using Al flux, as necessary, and using a belt cylinder-type high pressure machine or a piston cylinder-type high pressure machine at >=2.0GPa pressure and at 600-900 deg.C.