公开(公告)号：MY170119A

公开(公告)日：2019-07-05

申请号：MYPI2011003342

申请日：2010-01-15

Applicant: TRUTAG TECH INC

Inventor： MOSLEHI MEHRDAD ,  CRAFTS DOUG ,  TAMILMANI SUBRAMANIAN ,  KRAMER JOE ,  KAMIAN GEORGE ,  NAG SOMNATH

Abstract: It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.