公开(公告)号：US20230044537A1

公开(公告)日：2023-02-09

申请号：US17790369

申请日：2020-12-30

Applicant: TSINGHUA UNIVERSITY

Inventor： Liyang PAN ,  Jingyao SUN ,  Huaqiang WU

IPC: G11C13/00

Abstract: A resistive random access memory array and an operation method therefor, and a resistive random access memory circuit. The resistive random access memory array includes multiple memory cells, multiple bit lines, multiple word lines, multiple block selection circuits, and multiple initialization circuits. Each memory cell includes a resistive random access memory device and a switching device. The multiple memory cells are arranged into multiple memory cell rows and multiple memory cell columns in a first direction and a second direction, and the multiple bit lines and the multiple memory cell columns are connected in one-to-one correspondence. Each block selection circuit is configured to write a read/write operation voltage into a correspondingly connected bit line in response to a block selection voltage. Each initialization circuit is configured to write an initialization operation voltage to a correspondingly connected bit line in response to an initialization control voltage.