公开(公告)号：US20150214096A1

公开(公告)日：2015-07-30

申请号：US14682823

申请日：2015-04-09

Applicant: Texas Instruments Incorporated

Inventor： Binghua HU ,  Sameer PENDHARKAR ,  Guru MATHUR ,  Takehito TAMURA

IPC: H01L21/762 ,  H01L21/3205 ,  H01L21/02 ,  H01L21/265 ,  H01L21/283

CPC classification number: H01L21/76224 ,  H01L21/02109 ,  H01L21/265 ,  H01L21/283 ,  H01L21/32055 ,  H01L21/76232 ,  H01L29/0619

Abstract: The width of a heavily-doped sinker is substantially reduced by forming the heavily-doped sinker to lie in between a number of closely-spaced trench isolation structures, which have been formed in a semiconductor material. During drive-in, the closely-spaced trench isolation structures significantly limit the lateral diffusion.

Abstract translation: 通过形成重掺杂沉降片位于已形成于半导体材料中的多个紧密间隔的沟槽隔离结构之间，大大减小了重掺杂沉降片的宽度。 在进入期间，紧密间隔的沟槽隔离结构显着限制了横向扩散。