公开(公告)号：US20240321571A1

公开(公告)日：2024-09-26

申请号：US18609278

申请日：2024-03-19

Applicant: Tokyo Electron Limited

Inventor： Daisuke OBA ,  Masafumi ISHIDA ,  Nobuo MATSUKI ,  Yoshinori MORISADA

IPC: H01L21/02 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/46 ,  C23C16/50 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32449 ,  H01J37/32816 ,  H01J2237/3321 ,  H01J2237/3382 ,  H01L21/0234

Abstract: A method of forming an insulating film on a substrate having a recess, includes preparing the substrate inside a chamber of a processing apparatus, forming a flowable oligomer film on the substrate by supplying a processing gas containing a raw material gas and a diluent gas into the chamber and generating a flowable oligomer by plasma polymerization, controlling an interior of the chamber to have a pressure equal to or lower than a vapor pressure of the flowable oligomer to partially vaporize and remove the flowable oligomer film, and forming the insulating film in the recess by supplying energy to the substrate to cure the flowable oligomer.

公开(公告)号：US20240087883A1

公开(公告)日：2024-03-14

申请号：US18271898

申请日：2022-01-11

Applicant: Tokyo Electron Limited

Inventor： Nobuo MATSUKI ,  Yoshinori MORISADA ,  Daisuke OBA

IPC: H01L21/02

CPC classification number: H01L21/02211 ,  H01L21/0217 ,  H01L21/02274

Abstract: A method for forming a silicon-containing film in a recess formed on a surface of a substrate, the method includes: (a) forming a flowable film in the recess by exposing the substrate, which is adjusted to a first temperature, to plasma generated from a processing gas including a halogen-containing silane: and (b) curing the flowable film by thermally processing the substrate at a second temperature higher than the first temperature.

公开(公告)号：US20250166990A1

公开(公告)日：2025-05-22

申请号：US18841870

申请日：2023-02-20

Applicant: Tokyo Electron Limited

Inventor： Daisuke OBA ,  Nobuo MATSUKI ,  Yoshinori MORISADA

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/56

Abstract: A method of forming an insulating film includes supplying a precursor gas to a substrate to generate a fluidic oligomer by plasma polymerization and deposit the fluidic oligomer on the substrate, performing a plasma process on the substrate after the depositing the fluidic oligomer, so that at least a part of the fluidic oligomer is hydrogen-terminated while maintaining fluidity of the fluidic oligomer, and subsequently performing an annealing process, which includes a plasma process, on the substrate to form the insulating film.

公开(公告)号：US20250144667A1

公开(公告)日：2025-05-08

申请号：US18920078

申请日：2024-10-18

Applicant: Tokyo Electron Limited

Inventor： Daisuke OBA ,  Nobuo MATSUKI ,  Yoshinori MORISADA

IPC: B05D1/00

Abstract: A substrate-processing method includes a) forming a flowable oligomer on a substrate, the flowable oligomer containing carbon; and b) exposing the substrate to a plasma of a modification gas containing carbon and hydrogen, thereby modifying the flowable oligomer and forming a carbon-containing film.