公开(公告)号：US20150221512A1

公开(公告)日：2015-08-06

申请号：US14607591

申请日：2015-01-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kota UMEZAWA ,  Yosuke WATANABE

IPC: H01L21/02 ,  C30B25/10

CPC classification number: H01L21/02645 ,  C30B25/10 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

Abstract: There is provided a method of growing a gallium nitride-based crystal, including: forming an interlayer including aluminum nitride or aluminum oxide on a silicon substrate at a film forming temperature of 350 to 700 degrees C.; heating the silicon substrate and the interlayer in an atmosphere containing ammonia or oxygen such that crystal nuclei of the aluminum nitride or the aluminum oxide included in the interlayer are distributed on the silicon substrate; and growing gallium nitride-based crystals on the silicon substrate from the crystal nuclei distributed on the silicon substrate.

Abstract translation: 提供了一种生长氮化镓基晶体的方法，包括：在硅衬底上以350-700℃的成膜温度形成包含氮化铝或氧化铝的中间层; 在含有氨或氧的气氛中加热硅衬底和中间层，使得包含在中间层中的氮化铝或氧化铝的晶核分布在硅衬底上; 以及从分布在硅衬底上的晶体核在硅衬底上生长的氮化镓基晶体。

公开(公告)号：US20140038394A1

公开(公告)日：2014-02-06

申请号：US13958195

申请日：2013-08-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yosuke WATANABE ,  Kota UMEZAWA

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  C23C16/303 ,  C23C16/45578 ,  C23C16/4584 ,  H01L21/0242 ,  H01L21/0262

Abstract: A method for forming a compound semiconductor film on a substrate to be processed, which includes: mounting a plurality of substrates to be processed on a substrate mounting jig; loading the substrates to be processed into a processing chamber; and heating the substrates to be processed loaded into the processing chamber; supplying a gas containing one element that constitutes a compound semiconductor, and another gas containing another element that constitutes the compound semiconductor and being different from the one element, into the processing chamber in which the substrates to be processed are loaded; and forming the compound semiconductor film on each of the substrates to be processed.

Abstract translation: 一种在待加工基板上形成化合物半导体膜的方法，包括：将多个待处理基板安装在基板安装夹具上; 将待处理的基板装载到处理室中; 并将待加工的基板加热到处理室中; 供给含有构成化合物半导体的一种元素的气体，以及含有构成化合物半导体的不同于该元素的其他元素的另一种气体加载到其中装载有待处理的基板的处理室中; 以及在要处理的每个基板上形成化合物半导体膜。

公开(公告)号：US20160265136A1

公开(公告)日：2016-09-15

申请号：US15057563

申请日：2016-03-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kota UMEZAWA ,  Yosuke WATANABE

IPC: C30B25/16 ,  C30B29/40 ,  C30B25/18 ,  C30B29/06 ,  C30B25/10 ,  C30B25/12

Abstract: A film forming method for forming an aluminum nitride film on a substrate in which at least a surface portion is formed of a single crystal silicon through an epitaxial growth under a vacuum atmosphere, includes performing one or more times a cycle including a first process of supplying a raw material gas containing an aluminum compound to the substrate and a second process of supplying an ammonia gas to form a seed layer formed of an aluminum nitride by a reaction of the ammonia gas and the aluminum compound adsorbed onto the silicon substrate, and simultaneously supplying the raw material gas containing the aluminum compound and the ammonia gas to form an aluminum nitride film on the seed layer.

Abstract translation: 一种用于在基板上形成氮化铝膜的成膜方法，其中在真空气氛下通过外延生长将至少一个表面部分由单晶硅形成，包括执行一次或多次循环，包括第一次供给 将含有铝化合物的原料气体输送到基板，以及第二工序，其通过氨气和吸附在硅基板上的铝化合物的反应，供给氨气，形成由氮化铝形成的种子层，同时供给 含有铝化合物的原料气体和氨气，以在种子层上形成氮化铝膜。

公开(公告)号：US20230197447A1

公开(公告)日：2023-06-22

申请号：US18084908

申请日：2022-12-20

Applicant: Tokyo Electron Limited

Inventor： Kota UMEZAWA ,  Yoshimasa WATANABE

IPC: H01L21/02 ,  H01L21/3065 ,  C23C16/24 ,  C23C16/56 ,  C30B1/02 ,  C30B29/06

CPC classification number: H01L21/02675 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/3065 ,  C23C16/24 ,  C23C16/56 ,  C30B1/023 ,  C30B29/06

Abstract: A method of forming a crystalline silicon film includes forming a first amorphous silicon film on a substrate, forming a crystal nucleation film in which crystal nuclei of silicon are formed by performing a first annealing on the substrate having the first amorphous silicon film formed thereon, performing etching with an etching gas, forming a second amorphous silicon film on the crystal nuclei remaining after the etching, and forming a crystalline silicon film by performing a second annealing on the substrate after the forming of the second amorphous silicon film to grow the crystal nuclei.

公开(公告)号：US20230175115A1

公开(公告)日：2023-06-08

申请号：US17922255

申请日：2021-03-29

Applicant: TOKYO ELECTRON LIMITED ,  TOHOKU UNIVERSITY

Inventor： Shuji AZUMO ,  Kota UMEZAWA ,  Katsutoshi ISHII ,  Akira SHIMIZU ,  Akinobu TERAMOTO ,  Tomoyuki SUWA ,  Yasuyuki SHIRAI ,  Takezo MAWAKI

IPC: C23C16/02 ,  H01L21/02 ,  H01L21/285 ,  C23C16/34 ,  C23C16/40 ,  C23C16/36 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C16/02 ,  H01L21/0206 ,  H01L21/02312 ,  H01L21/02205 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02181 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/28568 ,  C23C16/34 ,  C23C16/401 ,  C23C16/36 ,  C23C16/345 ,  C23C16/403 ,  C23C16/405 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/02271 ,  H01L21/0228

Abstract: A selective film forming method includes: preparing a substrate including a first film having a first surface and a second film having a second surface, the second film being different from the first film; selectively adsorbing a secondary alcohol gas and/or a tertiary alcohol gas to the second surface; and selectively forming a film on the first surface by supplying at least a raw material gas.

公开(公告)号：US20140318457A1

公开(公告)日：2014-10-30

申请号：US14262334

申请日：2014-04-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kota UMEZAWA ,  Yosuke WATANABE

IPC: C23C16/44 ,  H01L21/02

CPC classification number: C23C16/4405 ,  C23C16/4408 ,  C23C16/45523

Abstract: A film forming apparatus includes: a processing chamber configured to accommodate a substrate to be processed, the processing chamber performing a film forming process forming a compound semiconductor film; a heating device configured to heat the substrate to be processed; an exhaust device configured to exhaust an interior of the processing chamber, and a process gas supply mechanism configured to supply a gas to the processing chamber. In addition, a method of cleaning the film forming apparatus includes: performing a process of cleaning the interior of the processing chamber and a member; performing a process of cleaning lower portions of the interior of the processing chamber and the member, respectively; and performing a process of cleaning a gas supply channel, wherein the processes are performed by controlling the pressure and temperature inside the processing chamber and supplying a cleaning gas from the gas supply channel.

Abstract translation: 一种成膜装置包括：处理室，被配置为容纳待处理的基板，所述处理室执行形成化合物半导体膜的成膜工艺; 加热装置，其构造成加热待加工的基板; 排气装置，其构造成排出处理室的内部;以及处理气体供给机构，其构造成将气体供给到处理室。 另外，清洗成膜装置的方法包括：执行清洁处理室内部和部件的处理; 执行分别清洁处理室和构件的内部的下部的过程; 以及执行清洁气体供应通道的过程，其中通过控制处理室内部的压力和温度并从气体供应通道供应清洁气体来执行处理。