公开(公告)号：JPH10107334A

公开(公告)日：1998-04-24

申请号：JP25408096

申请日：1996-09-26

Applicant: TOSHIBA CORP

Inventor： YAMAZAKI MUTSUKI ,  TERAJIMA YOSHIAKI ,  KUDO YUKI

IPC: C04B35/00 ,  C01G1/00 ,  C04B35/495 ,  H01B12/06 ,  H01L39/02 ,  H01L39/24

Abstract: PROBLEM TO BE SOLVED: To improve environmental resistance and to increase critical temperature and a critical current density by forming an oxide film that has a specific film thickness and contains an element that can take a plurality of valences at one portion on an oxide superconductor, so that a region with a wide area can be occupied. SOLUTION: An oxide material, made of at least two types of elements that are selected from titanium oxide or Sr, Ti, Ba, Pb, and Zr that are elements for taking a plurality of valences due to chemical stoichiometric composition, is laminated on the surface of an oxide superconductor 4. A film that is laminated on the oxide superconductor surface needs to be at least as thick as 500Å. Also, the area of region where an oxide film is laminated on the superconductor needs to be wider than the area of a region without lamination and is preferably at least two times as wide as the region or wider. For example, after the Y-system superconductor film 4 is worked, the temperature is heated to a specific temperature, and titanium oxide layer 5 is laminated by laser irradiation.

公开(公告)号：JPH0697519A

公开(公告)日：1994-04-08

申请号：JP24511992

申请日：1992-09-14

Applicant: TOSHIBA CORP

Inventor： TAKENO SHIRO ,  NAKAMURA SHINICHI ,  TERAJIMA YOSHIAKI ,  MIURA TADAO

IPC: H01L39/22

Abstract: PURPOSE:To form an S/N/S junction capable of obtaining, e.g. a sufficient superconducting current by a simple manufacturing process. CONSTITUTION:The title superconducting element has a hetero junction of superconductor (S1)/non-superconductor (N)/superconductor (S2). As the superconductor, an oxide superconductor thin film is used which is composed of tetragonal system Sr1-xMx)CuO2 (M is bivalent cation element or trivalent cation element and 0

公开(公告)号：JPS6417322A

公开(公告)日：1989-01-20

申请号：JP17122087

申请日：1987-07-10

Applicant: TOSHIBA CORP

Inventor： MIURA TADAO ,  TERAJIMA YOSHIAKI ,  HORI AKIO ,  SUNAI MASAYUKI

IPC: C23C14/34 ,  C23C14/08 ,  C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L39/12

Abstract: PURPOSE:To improve the reproducibility by forming a specific oxide superconducting thin film by the spattering method in which the rare gas containing the specific % of oxygen gas is used as the spatter gas. CONSTITUTION:A substrate 1 is installed on a substrate holder 12, rare gas is fed from a gas feed system (I) 16, O2 gas is fed from a gas feed system (II) 17, and an oxide superconducting thin film 2 with the composition of Ln: M:Cu:O=1:2:3:(7-delta) is formed by the spattering method in which the rare gas containing 0.1%-5% of oxygen gas is used as the spatter gas, where Ln is at least one kind of element selected from a group of rare earth elements, M is at least one kind of element selected from a group of Ba, Sr, Ce, and deltais larger than 0 and lees than 1 and indicates the oxygen deficiency. Cu can be thereby prevented from being segregated by the heat treatment, and the reproducibility is improved.

公开(公告)号：JPS61153829A

公开(公告)日：1986-07-12

申请号：JP27402384

申请日：1984-12-27

Applicant: TOSHIBA CORP

Inventor： IKEGAWA SUMIO ,  TERAJIMA YOSHIAKI ,  YASUDA NOBURO

IPC: B41M5/26 ,  G11B7/00 ,  G11B7/0055 ,  G11B7/24 ,  G11B7/243 ,  G11B7/30

Abstract: PURPOSE:To improve the S/N ratio of reproduction, to speed up recording and erasure, and to prolong the life of a device with simple constitution by using a single-layer crystalline film which has martensite transformation at specific temperature and with specific stress as a recording medium. CONSTITUTION:A preferable recording medium has the reverse transformation of martensite transformation at 150-500 deg.C and has the martensite transformation at -50-120 deg.C. For example, a Cu-Al alloy thin film is used. Then, a light beam is stopped down to about 1mumphi and focused on the recording medium 11 accurately through an objective 15 to heat the medium locally. In this case, a plastic deforming part 3 due to the martensite transformation which is caused locally is used as a recording part and the difference in reflection factor of a light beam between the deforming part 3 and a flat part 4 is detected by a photodetector 17 to reproduce information. When information is erased, the light beam is irradiated so that the temperature of the recording medium 11 is higher than temperature at which the reverse transformation of the martensite transformation occurs, erasing the deformation of the recording part 4. Thus, the performance of the optical information recording device is improved with the simple constitution.

公开(公告)号：JPS6148150A

公开(公告)日：1986-03-08

申请号：JP16898384

申请日：1984-08-13

Applicant: Toshiba Corp

Inventor： ICHIHARA KATSUTARO ,  TERAJIMA YOSHIAKI ,  YASUDA NOBURO ,  SHIMANUKI SENJI ,  KOBORI HIROMICHI

IPC: G11B11/10 ,  G11B11/105 ,  G11C13/06

CPC classification number: G11B11/10586 ,  G11B11/105

Abstract: PURPOSE:To form a vertical magnetization film with a method having a small thermal load to a base by using a TbCo amorphous ferrimagnetic alloy film for the reproducing layer and the magnetic film with a low Curie temperature than that of the reproducing layer for the recording layer to attain excellent recording and reproducing characteristics. CONSTITUTION:Since a TbCo amorphous ferrimagnetic alloy film having a large Kerr rotary angle and a large reflection luminous amount is used as the reproducing layer, the reproducing characteristic is excellent. The recording layer made of a magnetic film having a lower Curie temperature than the reproducing layer is used in combination with the TbCo amorphous ferrimagnetic alloy film being the reproducing layer with respect to the recording characteristic, the magnetization inversion of the reproducing layer is caused near the Curie temperature of the recording layer. Thus, the excellent recording sensitivity higher than the case of a TbCo film single layer and the same degree as a TbFe single layer only is attained. Further, the film forming method with a small thermal load to the base such as the non-bias sputtering method or the vapor deposition method is used for both the reproducing layer and the recording layer.

Abstract translation: 目的：通过使用用于再现层的TbCo非晶铁磁合金膜和具有比用于记录层的再现层的低居里温度的磁膜，将具有对基底的热负荷小的方法形成垂直磁化膜 以获得优异的记录和再现特性。 构成：由于使用具有大克尔旋转角度和大反射光量的TbCo非晶铁磁合金膜作为再现层，所以再现特性优异。 与具有比再现层更低的居里温度的磁性膜制成的记录层与作为再现层的TbCo非晶铁磁性合金膜相对于记录特性组合使用，再现层的磁化反转在 记录层的居里温度。 因此，与TbCo膜单层的情况相比，获得了比TbFe单层更好的记录灵敏度。 此外，再现层和记录层都使用对基底的热负荷小的成膜方法，例如非偏压溅射法或气相沉积法。

公开(公告)号：JPS6116052A

公开(公告)日：1986-01-24

申请号：JP13598384

申请日：1984-06-30

Applicant: Toshiba Corp

Inventor： OOKAWA HIDEKI ,  ICHIHARA KATSUTAROU ,  TERAJIMA YOSHIAKI ,  YASUDA NOBUROU

IPC: G11B11/10 ,  G11B11/105

CPC classification number: G11B11/105

Abstract: PURPOSE:To obtain the excellent corrosion resistance of a recording layer consisting of a thin rare earth-transition metal amorphous alloy film having the axis of easy magnetization in the direction perpendicular to the film plane by providing thin anodic oxide films on both surfaces of said recording layer thereby protecting the recording layer. CONSTITUTION:The 1st protective layer 3 on the base body 1 side of the recording layer 4 consisting of the thin rare earth-transition metal amorphous alloy film having the axis of easy magnetization in the direction perpendicular to the film plane out of the protective layers 3, 5 formed respectively on both front and rear surfaces of the layer 4 formed on the substrate 1 is constituted with the thin oxide film provided by the anodic oxidation of the same thin alloy film as the layer 4 in an aq. soln. The 2nd protective layer 5 on the surface of the layer 4 on the side opposite from the body 1 is constituted with the thin oxide film provided by the anodic oxidation of the thin alloy film surface constituting the layer 4 in the aq. soln. A thin light transmittable film 2 is provided between the layer 3 and the body 1. The layer 5 is formed of the thin oxide film of the base itself of the layer 4 and therefore defects such as pinholes are eliminated and the adhesiveness is good. Since the layer 3 is formed of the anodic oxide of the same component as the component of the base for the layer 4, said layer has less defects such as pinholes. The cracking in the stage of forming the layer 3 is prevented by providing the film 2 between the layer 3 and the body 1.

Abstract translation: 目的：为了通过在所述记录的两个表面上提供薄的阳极氧化膜，在与薄膜平面垂直的方向上具有容易磁化的轴的稀薄的稀土 - 过渡金属非晶态合金薄膜来获得优异的耐腐蚀性 从而保护记录层。 构成：记录层4的基体1侧的第1保护层3由在与保护层3之外的膜面垂直的方向上容易磁化的薄的稀土类 - 过渡金属非晶合金膜构成 形成在基板1上形成的层4的前表面和后表面上的薄膜5由薄膜氧化膜构成，该薄氧化膜通过与水相中的层4相同的薄合金膜的阳极氧化而提供。 索恩 层4的与主体1相反一侧的表面上的第二保护层5由构成层4的薄合金膜表面的阳极氧化提供的薄氧化膜构成。 索恩 在层3和主体1之间设置薄透光膜2.层5由层4的基体本身的薄氧化膜形成，因此消除诸如针孔的缺陷，并且粘附性良好。 由于层3由与层4的基底的成分相同的成分的阳极氧化物形成，因此所述层具有较少的缺陷，例如针孔。 通过在层3和主体1之间设置膜2来防止形成层3的阶段中的裂纹。

公开(公告)号：JPS6116050A

公开(公告)日：1986-01-24

申请号：JP13598084

申请日：1984-06-30

Applicant: Toshiba Corp

Inventor： OOKAWA HIDEKI ,  ICHIHARA KATSUTAROU ,  TERAJIMA YOSHIAKI ,  YASUDA NOBUROU

IPC: G11B5/66 ,  G11B5/64 ,  G11B5/65 ,  G11B11/10 ,  G11B11/105

Abstract: PURPOSE: To improve the corrosion resistance of a recording layer consisting of a thin magnetic alloy film having the axis of easy magnetization in the direction perpendicular to the film plane by providing the 1st protective layer of the oxide film provided by anodic oxidation in an aq. soln. and the 2nd protective layer consisting of a dielectric film on the surface of said recording layer.
CONSTITUTION: The information recording medium is constituted with the recording layer 2 consisting of the thin magnetic alloy film having the axis of easy magnetization in the direction perpendicular to the film plane, the 1st protective layer 3 consisting of the thin oxide film formed thereon by anodizing the surface of the layer 2 in the aq. soln. and the 2nd protective layer 4 consisting of the dielectric layer formed thereon. The thin magnetic alloy film of the layer 2 consists of the thin rare earth- transition metal amorphous alloy film and the 1st protective layer is formed by anodizing said film in a boric acid soln., etc. or the soln. of a formic acid-formate buffer, etc. The 2nd protective layer 4 is formed by using the oxide or nitride of a metal or semiconductor such as AlN, SiO
2 . The layer 3 consists of the thin oxide film of the base alloy component and has therefore no defects such as pinholes and has excellent adhesiveness. The corrosion resistance is remarkably improved by providing further the 2nd protective layer 4 consisting of the dielectric film thereon.
COPYRIGHT: (C)1986,JPO&Japio

Abstract translation: 目的：通过提供通过阳极氧化提供的氧化膜的第一保护层，提高由与具有垂直于膜平面的方向具有易磁化轴的薄磁合金膜组成的记录层的耐腐蚀性。 索恩 以及由所述记录层的表面上的电介质膜构成的第二保护层。 构成：信息记录介质由具有在与膜平面垂直的方向具有易磁化轴的薄磁合金膜构成的记录层2构成，第一保护层3由其上形成的薄氧化膜组成，通过阳极氧化 水平面2层的表面。 索恩 以及由其上形成的电介质层组成的第二保护层4。 层2的​​薄磁合金膜由薄稀土 - 过渡金属非晶态合金膜构成，第一保护层通过在硼酸溶液等或溶胶中阳极氧化所述膜而形成。 的甲酸 - 甲酸盐缓冲液等。通过使用诸如AlN，SiO 2的金属或半导体的氧化物或氮化物形成第二保护层4。 层3由基底合金成分的薄氧化膜构成，因此没有针孔等缺陷，粘接性优异。 通过进一步提供由其上的电介质膜构成的第二保护层4，显着提高了耐腐蚀性。

公开(公告)号：JP2004349845A

公开(公告)日：2004-12-09

申请号：JP2003142239

申请日：2003-05-20

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： HASHIMOTO TATSUNORI ,  AIGA FUMIHIKO ,  FUKUYA HIROYUKI ,  TERAJIMA YOSHIAKI ,  YAMAZAKI MUTSUKI ,  KAYANO HIROYUKI

IPC: H01P1/203 ,  H01P1/205

CPC classification number: H01P1/20381

Abstract: PROBLEM TO BE SOLVED: To provide a narrow band sharp cut filter employing a planar circuit.
SOLUTION: This band pass filter is configured of distribution constant type resonators 51, 53, 55 and 57 each composed of a planar circuit; transmission paths 52, 54 and 56 for coupling the resonators among the resonators 51, 53, 55 and 57; and excitation lines 50, 58 arranged at input/output sections. In the band pass filter, the connection among all the resonators are configured of a line having a length which is (1+2m)/4-fold (m: natural number) of a wavelength corresponding to a center frequency of the frequency band, and the length of each coupling portion of the line constituting the resonators 51, 53, 55 and 57 is determined substantially as a 1/4 wavelength.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2004336605A

公开(公告)日：2004-11-25

申请号：JP2003132654

申请日：2003-05-12

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： AIGA FUMIHIKO ,  TERAJIMA YOSHIAKI ,  FUKUYA HIROYUKI ,  YAMAZAKI MUTSUKI ,  HASHIMOTO TATSUNORI ,  KAYANO HIROYUKI

IPC: H01P1/205 ,  H01P1/203

CPC classification number: H01P1/20372

Abstract: PROBLEM TO BE SOLVED: To provide a filter circuit using a line for connection by which strong connection is stably achieved without a deviation in the resonance frequency of a resonator.
SOLUTION: A band pass filter includes a micro-strip line, a strip line, or a coplanar line. The band pass filter comprises a first half-wavelength resonator resonating by the center frequency of a pass band, a second half-wavelength resonator resonating by the center frequency of the pass band, and a transmission line for connecting by line the first and the second half-wavelength resonators.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种使用用于连接线的滤波器电路，通过该线路可以稳定地实现强连接而不会使谐振器的谐振频率发生偏差。 解决方案：带通滤波器包括微带线，带状线或共面线。 带通滤波器包括由通带的中心频率谐振的第一半波长谐振器，由通带的中心频率谐振的第二半波长谐振器和用于通过线连接第一和第二通道的传输线 半波长谐振器。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004112668A

公开(公告)日：2004-04-08

申请号：JP2002275563

申请日：2002-09-20

Applicant: Toshiba Corp ,  株式会社東芝

Inventor： AIGA FUMIHIKO ,  TERAJIMA YOSHIAKI ,  YAMAZAKI MUTSUKI ,  FUKUYA HIROYUKI ,  KAYANO HIROYUKI ,  HASHIMOTO TATSUNORI

IPC: H01P1/203 ,  H01P1/205 ,  H01P7/08

CPC classification number: H01P1/20381 ,  H01P7/082 ,  H01P7/084

Abstract: PROBLEM TO BE SOLVED: To provide a resonator in which fine control of a resonance frequency is made possible by finely adjusting a length of a resonant element.
SOLUTION: In a half wavelength (λ/2) resonator composed of a microstrip line or a strip line, line pattern parts 4-1 to 4-n are located symmetrically with respect to a reference line Rx, connected to be mutually L-shaped, and formed into closed loop to have open terminals 4A and 4B. A pair of line pattern parts 4-1 having the open terminals 4A and 4B are mutually oppositely extended such that a base part to connect the adjacent line pattern part 4-2 is proximate to the reference line Rx and the open terminals 4A and 4B are located away from the reference line Rx.
COPYRIGHT: (C)2004,JPO