公开(公告)号：US10829864B2

公开(公告)日：2020-11-10

申请号：US15851023

申请日：2017-12-21

Applicant: TruTag Technologies, Inc.

Inventor： Karl-Josef Kramer ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani ,  George Kamian ,  Jay Ashjaee ,  Takao Yonehara

IPC: C30B1/02 ,  C25D11/00 ,  C25D21/04 ,  C25D17/08 ,  C25D17/00 ,  C25F7/00 ,  C25D11/32 ,  C25D11/02 ,  C25D7/12

Abstract: This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

公开(公告)号：US10138565B2

公开(公告)日：2018-11-27

申请号：US15398681

申请日：2017-01-04

Applicant: TruTag Technologies, Inc.

Inventor： Takao Yonehara ,  Subramanian Tamilmani ,  Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Yasuyoshi Miyaji ,  Noriyuki Hayashi ,  Takamitsu Inahara

IPC: C25D11/32 ,  H01L21/02 ,  C25D11/00 ,  H01L21/67 ,  H01L31/18 ,  C25F3/12 ,  H01L21/687 ,  C25F7/02 ,  H01L21/677

Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

公开(公告)号：US20180323087A9

公开(公告)日：2018-11-08

申请号：US15398681

申请日：2017-01-04

Applicant: TruTag Technologies, Inc.

Inventor： Takao Yonehara ,  Subramanian Tamilmani ,  Karl-Josef Kramer ,  Jay Ashjaee ,  Mehrdad M. Moslehi ,  Yasuyoshi Miyaji ,  Noriyuki Hayashi ,  Takamitsu Inahara

IPC: H01L21/67 ,  C25F3/12 ,  C25F7/02 ,  H01L21/02 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/67086 ,  C25D11/005 ,  C25D11/32 ,  C25F3/12 ,  C25F7/02 ,  H01L21/0203 ,  H01L21/67781 ,  H01L21/68721 ,  H01L21/68771 ,  H01L21/68785 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

公开(公告)号：US20180347063A1

公开(公告)日：2018-12-06

申请号：US15851023

申请日：2017-12-21

Applicant: TruTag Technologies, Inc.

Inventor： Karl-Josef Kramer ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani ,  George Kamian ,  Jay Ashjaee ,  Takao Yonehara

IPC: C25D11/00 ,  C25D21/04 ,  C25D17/08 ,  C25D17/00 ,  C25D7/12 ,  C25F7/00 ,  C25D11/32 ,  C25D11/02

Abstract: This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

公开(公告)号：US09890465B2

公开(公告)日：2018-02-13

申请号：US14563888

申请日：2014-12-08

Applicant: TruTag Technologies, Inc.

Inventor： Karl-Josef Kramer ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani ,  George D. Kamian ,  Jay Ashjaee ,  Takao Yonehara

IPC: C25D11/32 ,  C25D11/00 ,  C25D7/12 ,  C25D11/02 ,  C25F7/00 ,  C25D21/04 ,  C25D17/00 ,  C25D17/08

CPC classification number: C25D11/005 ,  C25D7/12 ,  C25D11/022 ,  C25D11/024 ,  C25D11/32 ,  C25D17/001 ,  C25D17/008 ,  C25D17/08 ,  C25D21/04 ,  C25F7/00

Abstract: This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.