公开(公告)号：JP2001308307A

公开(公告)日：2001-11-02

申请号：JP2000147328

申请日：2000-05-19

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHEN MING-I ,  HAN ZUISHO

IPC: H01L21/76 ,  H01L27/06 ,  H01L27/146

Abstract: PROBLEM TO BE SOLVED: To provide CMOS sensor structure for forming a silicon oxide outer frame before the treatment of the injection of n+ and n-, increasing the separation distance between the n+/n- field injection regions, and at the same time reducing end junction leakage. SOLUTION: CMOS structure has a silicon oxide external frame around a sensor region. The CMOS sensor structure is equipped with a substrate, n- and n+ regions, a separation region, field injection region, and a silicon oxide external frame. The n- region is formed inside the substrate, and the n+ region is formed inside the n- region. The separation region is formed on the substrate adjacent to the end of the n- region. The field injection region is formed at the lower part of the separation region. The silicon oxide external region is formed at the upper part of the n-, separation, and n+ regions. The silicon oxide external frame can prevent surface leakage by increasing distance from the n- region to the field injection region so that end junction leakage decreases, and further performing etching.