公开(公告)号：JP2002111040A

公开(公告)日：2002-04-12

申请号：JP2000286180

申请日：2000-09-20

Applicant: UNITED MICROELECTRONICS CORP

Inventor： CHO SHUNZAI

IPC: H01L27/146 ,  H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a photodiode structure for reducing the leakage current of a junction section to approximately 1/10 as compared with a conventional photodiode device, and the manufacturing method of the photodiode structure. SOLUTION: The photodiode structure comprises a second-conductivity-type region 210 that is formed at a specific region from an isolation region 204 adjacent to a substrate 200, and a mask layer for covering at least a peripheral strip near the edge of the isolation region so that the doped second-conductivity- type region is exposed.