公开(公告)号：JP2000216137A

公开(公告)日：2000-08-04

申请号：JP983499

申请日：1999-01-18

Applicant: UNITED MICROELECTRONICS CORP

Inventor： KO ROSHO ,  FU KANYU

IPC: H01L21/302 ,  H01L21/283 ,  H01L21/3065 ,  H01L21/822 ,  H01L27/04 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To protect a device against damage caused by plasma charge by a method wherein an inner dielectric layer, a conductive layer and an insulating layer are patterned for forming a contact opening that exposes a source/drain region, and the contact opening is provided with a side wall that exposes the conductive layer. SOLUTION: An ILD layer 210a, a conductive layer 208a and an insulating layer 206a are patterned through, for instance, a dry etching method to form a contact opening 212. The contact opening exposes the side wall 214 of the conductive layer 208a besides a doped region 204. As a result, excess charges produced during a plasma operation (e.g. PECVD or HDPCVD for forming an ILD layer 210) are channeled away through the conductive layer 208, so that an electric potential is adjusted, and the device can be protected against damage caused by a current flow toward potential gradient.