公开(公告)号：JP2990118B2

公开(公告)日：1999-12-13

申请号：JP22514897

申请日：1997-08-21

Applicant: UNITED MICROELECTRONICS CORP

Inventor： KO INJO

IPC: H01L21/336 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

公开(公告)号：JPH1174503A

公开(公告)日：1999-03-16

申请号：JP22514897

申请日：1997-08-21

Applicant: UNITED MICROELECTRONICS CORP

Inventor： KO INJO

IPC: H01L21/336 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To manufacture a small-sized MOS field effect transistor having a narrow gate electrode. SOLUTION: A first doped polysilicon layer 34 is formed on an active device area of a substrate 30 to manufacture a field effect transistor with a narrow gate. An opening is formed on the first polysilicon layer 34 to expose the surface of the substrate. A doped oxide layer is deposited on the first polysilicon layer 34 and in the opening of the first polysilicon layer 34. Oxide spacers 42 are formed on the side walls of the opening by etching. Impurities are diffused from the first polysilicon layer 34 and the doped oxide into the substrate 30 by annealing to form a source/drain areas 48 and 50. A gate oxide layer is formed on the substrate in the opening. A second polysilicon layer 56 is deposited on the device, on the surface of the insulating spacer structures 42 in the opening of the mask and on the gate oxide layer 52 in the bottom of the opening. The second polysilicon layer 56 is patterned to form a gate electrode extending between the spacers in the opening of the first polysilicon layer 34. The effective length of the gate electrode formed in this way is smaller than the length designed by a conventional method.