公开(公告)号：JP2001168189A

公开(公告)日：2001-06-22

申请号：JP34550499

申请日：1999-12-03

Applicant: UNITED MICROELECTRONICS CORP

Inventor： O SHIMEI

IPC: H01L23/522 ,  H01L21/3205 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a dual damascene with a dielectric layer formed on a substrate equipped with a first conductive line and an air gap. SOLUTION: A method for forming a dual damascene structure has a step for forming a dielectric layer on the first conductive line, a step for forming a via-hole opening so as to expose the first conductive line in the dielectric material and the dielectric layer so as to expose the first conductive line, and a step for forming a second conductive line and a via-plug by filling the trench and the via-hole opening with a conductive material.