公开(公告)号：JP2001036058A

公开(公告)日：2001-02-09

申请号：JP19767799

申请日：1999-07-12

Applicant: UNITED MICROELECTRONICS CORP

Inventor： HAN ZUISHO ,  RI JIKA

IPC: H01L31/10 ,  H01L27/146

Abstract: PROBLEM TO BE SOLVED: To obtain a manufacture for a MOS sensor having improved sensitivity. SOLUTION: A P-type region 104 extending into a substrate 100 is formed. A laminated polysilicon structure 115 is formed on the P-type region 104. Next, the laminated polysilicon structure 115 is used as an implantation buffer layer, and ions are implanted into the P-type region to form an N-type region 120 extended to the substrate at a shallow depth. The laminated polysilicon structure 115 is patterned and etched to form a laminated polysilicon ring 122, exposing partially the N-type region 120 on the P-type region. A metal wiring 130 for electrically connecting the laminated polysilicon ring structure with a MOS transistor gate is formed.