公开(公告)号：JP2000058828A

公开(公告)日：2000-02-25

申请号：JP26791898

申请日：1998-09-22

Applicant: UNITED MICROELECTRONICS CORP

Inventor： KO KOKUKIN ,  RO GYOREI ,  YEW TRI-RUNG

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/336 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide metallic silicide and a method for forming it. SOLUTION: In a silicon substrate 20, a field separation part is given and MOS containing a gate 22, spacers 25 on the side walls of the gate 22, and source/drain areas 24 is installed. A titanium layer 28 is formed on the silicon substrate 20. A first speedy thermal treatment is executed and the titanium layer 28 changes into titanium silicide in a first form. The titanium layer which is not changed into titanium silicide is removed. A high compressible film is formed on the silicon substrate 20. A second speedy thermal treatment is executed and a titanium silicide layer changes to a second form.