公开(公告)号：JPH1012737A

公开(公告)日：1998-01-16

申请号：JP3937697

申请日：1997-02-24

Applicant: UNITED MICROELECTRONICS CORP

Inventor： SON KISHU ,  KYU SEITEN ,  SAI MEIKO

IPC: C23C16/04 ,  C23C16/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a connection body for electric connection which has no break and high reliability for a semiconductor IC device, and its formation. SOLUTION: The aluminum plug 28 is formed through a process for forming a semiconductor constituent element on a substrate 20 which has an insulating layer 24, having a contact opening 26 for exposing a conductive area 22 of the semiconductor constituent element, formed on the top surface, a process for vacuum heat annealing of the substrate 20, and a process for connecting the conductive area 22 in the contact opening 26 on the top surface of the substrate and depositing aluminum selectively not on the top surface of the insulating layer 24, but on the exposed conductive area 22 in a CVD process that uses DMEAA (dimemethyl ether amine allene) as a precursor and is carried out at substrate temperature with deposit selectivity.